STMicroelectronics BTA24, BTB24, BTA25, BTA26 User Manual

BTA24, BTB24, BTA25, BTA26

Snuberrless™ and Standard

and T25 series

25 A Triacs

Main features

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT (Q1)

25 A

600 and 800 V

35 to 50 mA

Description

Available either in through-hole or surface-mount packages, the BTA24, BTB24, BTA25, BTA26 and T25 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...

The snubberless versions (BTA/BTB...W and T25 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V (File ref.: E81734).

) complying with UL standards

RMS

G

A1

A2

G

TO-220AB Insulated

(BTA24)

A1

A2

G

RD91

(BTA25)

A1

A2

A1

A2

G

D2PAK

(T25-G)

A1

A2

G

TO-220AB

(BTB24)

A1

A2

G

TOP3 Insulated

(BTA26)

A2

Order codes

Part Number Marking

BTA24-xxxxxRG

BTB24-xxxxxRG

BTA25-xxxxxRG

See Table 6 on page 6

BTA26-xxxxxRG

T25xx-xxxG

T25xx-xxxG-TR

TM: Snubberless is a trademark of STMicroelectronics

July 2006 Rev 9 1/12

www.st.com

12

Characteristics BTA24, BTB24, BTA25, BTA26 and T25 series

1 Characteristics

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

2

D

PAK /

TO-220AB

I

T(RMS)

RMS on-state current (full sine wave)

TOP3 Ins.

TO-220AB Ins. T

I

TSM

²

I

dI/dt

V

DSM/VRSM

I

GM

P

G(AV)

T

stg

T

Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless™ and

Non repetitive surge peak on-state current (full cycle, T

tI

²

t Value for fusing tp = 10 ms 340 A²s

initial = 25° C)

j

Critical rate of rise of on-state current

= 2 x IGT , tr ≤ 100 ns

I

G

Non repetitive surge peak off-state voltage

Peak gate current tp = 20 µs Tj = 125° C 4 A

Average gate power dissipation Tj = 125° C 1 W

Storage junction temperature range Operating junction temperature range

j

F = 50 Hz t = 20 ms 250

F = 60 Hz t = 16.7 ms 260

F = 120 Hz T

t

= 10 ms Tj = 25° C

p

= 100° C

T

c

= 90° C

T

c

= 75° C

c

= 125° C 50 A/µs

j

25 ARD91 /

V

DSM/VRSM

+ 100

- 40 to + 150

- 40 to + 125

A

V

° C

Logic Level (3 quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W

Symbol Test Conditions Quadrant

(1)

I

GT

V

I

H

GT

GD

(2)

VD = 12 V RL = 33 Ω

VD = V T

= 125° C

j

RL = 3.3 kΩ

DRM

IT = 500 mA MAX. 50 50 75 mA

I - II - III MAX. 35 35 50 mA

I - II - III MAX. 1.3 V

I - II - III MIN. 0.2 V

I - III

I

L

dV/dt

(dI/dt)c

1. minimum IGT is guaranted at 5% of IGT max.

2. for both polarities of A2 referenced to A1.

IG = 1.2 I

(2)

VD = 67 %V

(2)

Without snubber Tj = 125° CMIN.131322A/ms

GT

gate open Tj = 125° C MIN. 500 500 1000 V/µs

DRM

T25 BTA/BTB

T2535 CW BW

70 70 80

MAX.

II 80 80 100

Unit

mA

2/12

BTA24, BTB24, BTA25, BTA26 and T25 series Characteristics

Table 3. Electrical characteristics (Tj = 25° C, unless otherwise specified),

Standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B

Symbol Test Conditions Quadrant Value Unit

(1)

I

GT

V

I

H

GT

GD

(2)

VD = 12 V RL = 33 Ω

VD = V

RL = 3.3 kΩ Tj = 125° C ALL MIN. 0.2 V

DRM

)IT = 500 mA MAX. 80 mA

I - II - III - IV MAX.

ALL MAX. 1.3 V

I - III - IV

I

L

dV/dt

(dV/dt)c

1. minimum IGT is guaranted at 5% of IGT max.

2. for both polarities of A2 referenced to A1.

Table 4. Static characteristics

IG = 1.2 I

(2)

VD = 67 %V

(2)

(dI/dt)c = 13.3 A/ms Tj = 125° C MIN. 10 V/µs

GT

II 160

gate open Tj = 125° C MIN. 500 V/µs

DRM

MAX.

Symbol Test Conditions Value Unit

(1)

V

T

V

t0

R

d

I

DRM

I

RRM

1. for both polarities of A2 referenced to A1.

ITM = 35 A tp = 380 µs Tj = 25° C MAX. 1.55 V

(1)

Threshold voltage Tj = 125° C MAX. 0.85 V

(1)

Dynamic resistance Tj = 125° C MAX. 16 mΩ

Tj = 25° C

V

DRM

= V

RRM

T

= 125° C 3 mA

j

MAX.

50

100

70

5µA

mA

Table 5. Thermal resistance

Symbol Parameter Value Unit

2

PAK / TO-220AB 0.8

D

R

th(j-c)

Junction to case (AC)

TO-220AB Insulated 1.7

R

th(j-a)

Junction to ambient

(1)

S = 1 cm

²

D2PA K 4 5

TO-220AB / TO-220AB Insulated 60

1. S = Copper surface under tab.

3/12

° C/WRD91 (Insulated) / TOP3 Insulated 1.1

° C/WTOP3 Insulated 50

Characteristics BTA24, BTB24, BTA25, BTA26 and T25 series

Figure 1. Maximum power dissipation versus

RMS on-state current (full cycle)

P(W)

30

25

20

15

10

5

0

0 5 10 15 20 25

I (A)

T(RMS)

Figure 3. D2PAK RMS on-state current versus

ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle)

I (A)

T(RMS)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125

T (°C)

amb

2

DPAK

(S=1cm )

2

Figure 2. RMS on-state current versus case

temperature (full cycle)

I (A)

T(RMS)

30

25

T (°C)

C

BTA24

BTA25 / BTA26

20

15

10

5

0

0 25 50 75 100 125

BTB / T25

Figure 4. Relative variation of thermal

impedance versus pulse duration

K=[Z /R

1E+0

1E-1

1E-2

1E-3

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

th th

Z

th(j-c)

]

Z

th(j-a)

BTA / BTB24 /T25

Z

th(j-a)

BTA26

t (s)

p

Figure 5. On-state characteristics

(maximum values)

I (A)

TM

300

T max.

j

V = 0.85V

to

R = 16 m

d

100

10

1

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

4/12

T=jT max.

j

Ω

T = 25°Cj.

V (V)

TM

Figure 6. Surge peak on-state current

versus number of cycles

I (A)

TSM

300

250

200

150

100

50

0

Repetitive T =75°C

1 10 100 1000

Non repetitive T initial=25°C

j

C

Number of cycles

t=20ms

One cycle