STMicroelectronics BTA16, BTB16 Technical data
®
BTA16, BTB16 and T16 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD
Table 1: Main Features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
600, 700 and 800 V
16 A
10 to 50 mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA16, BTB16 and T16 triac series
is suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase
control operation in light dimmers, motor speed
controllers, ...
The snubberless versions (BTA/BTB...W and T16
series) are specially recommended for use on inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab (rated at 2500V
) complying with UL standards
RMS
(File ref.: E81734).
A2
G
A1
A2
A1
A2
G
D2PAK
(T16-G)
A1
A2
G
TO-220AB Insulated
(BTA16)
Table 2: Order Codes
Part Number Marking
BTA16-xxxxxRG
BTB16-xxxxxRG
See page table 8 on
T16xx-xxxG
16A TRIACS
A2
A1
A2
G
TO-220AB
(BTB16)
page 8
REV. 7February 2006
1/9
BTA16, BTB16 and T16 Series
Table 3: Absolute Maximum Ratings
Symbol Parameter Value Unit
2
PAK /
I
T(RMS)
I
TSM
²
I
tI
dI/dt
V
DSM/VRSM
RMS on-state current (full sine
wave)
Non repetitive surge peak on-state
current (full cycle, T
²
t Value for fusing
initial = 25°C)
j
Critical rate of rise of on-state cur-
= 2 x IGT , tr ≤ 100 ns
rent I
G
Non repetitive surge peak off-state
voltage
D
TO-220AB
TO-220AB Ins.
F = 50 Hz t = 20 ms 160
F = 60 Hz t = 16.7 ms 168
t
= 10 ms
p
F = 120 Hz
= 10 ms Tj = 25°C
t
p
= 100°C
T
c
= 15°C
T
c
T
= 125°C
j
16 A
144
50 A/µs
V
DSM/VRSM
+ 100
A
²
s
A
V
I
GM
P
G(AV)
T
stg
T
j
Tables 4: Electrical Characteristics (T
■ SNUBBERLESS and Logic Level (3 quadrants)
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
= 25°C, unless otherwise specified)
j
t
= 20 µs Tj = 125°C
p
Symbol Test Conditions Quadrant
I
(1)
GT
V
GT
V
GD
(2) IT = 500 mA
I
H
I
L
dV/dt (2)
V
VD = V
T
IG = 1.2 I
V
(dV/dt)c = 0.1 V/µs
(dI/dt)c (2)
Without snubber
= 12 V RL = 33 Ω
D
RL = 3.3 kΩ
DRM
= 125°C
j
GT
= 67 %V
D
gate open Tj = 125°C
DRM
I - II - III MAX. 35 10 35 50 mA
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2 V
I - III
II 60 30 60 80
T
= 125°C
j
T
= 125°C
j
= 125°C
T
j
4A
T
= 125°C
j
1W
- 40 to + 150
- 40 to + 125
°C
T16 BTA16 / BTB16
Unit
T1635 SW CW BW
MAX. 35 15 35 50 mA
50 25 50 70
MAX.
mA
MIN. 500 40 500 1000 V/µs
-8.5- -
MIN.
-3.0- -
A/ms(dV/dt)c = 10 V/µs
8.5 - 8.5 14
2/9
■ Standard (4 quadrants)
BTA16, BTB16 and T16 Series
Symbol Test Conditions Quadrant
BTA16 / BTB16
CB
I
(1)
GT
V
GT
V
GD
I
(2) IT = 500 mA
H
I
L
dV/dt (2)
V
= 12 V RL = 33 Ω
D
VD = V
IG = 1.2 I
= 67 %V
V
D
RL = 3.3 kΩ Tj = 125°C
DRM
GT
gate open Tj = 125°C
DRM
(dV/dt)c (2) (dI/dt)c = 7 A/ms
I - II - III
IV
MAX.
ALL MAX. 1.3 V
ALL MIN. 0.2 V
MAX. 25 50 mA
I - III - IV
MAX.
II 80 120
MIN. 200 400 V/µs
T
= 125°C
j
MIN. 5 10 V/µs
25
50
50
100
40 60
Table 5: Static Characteristics
Symbol Test Conditions Value Unit
V
(2) ITM = 22.5 A tp = 380 µs Tj = 25°C
T
(2)
V
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
Threshold voltage
Dynamic resistance
V
= V
DRM
RRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
T
= 125°C
j
MAX. 1.55 V
MAX. 0.85 V
MAX. 25 mΩ
5µA
MAX.
2mA
Unit
mA
mA
Table 6: Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC)
2
D
PAK / TO-220AB
1.2
TO-220AB Insulated 2.1
R
th(j-a)
S = Copper surface under tab.
Junction to ambient
S = 1 cm
²
D2PAK
TO-220AB / TO-220AB Insulated 60
45
°C/W
°C/W
3/9
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