February 2017
DocID7473 Rev 10
1/13
This is information on a product in full production.
www.st.com
BTA12, BTB12, T12xx
12 A Snubberless™, logic level and standard Triacs
Datasheet - production data
Symbol
T12xx
BTA12
BTB12
I
T(RMS)
12
12
12
V
DRM/VRRM
600/800
IGT(Snubberless)
5/10/35/50
IGT(standard)
-
25/50
Applications
ON/OFF or phase angle function in applications
such as static relays, light dimmers and
appliance motors speed controllers.
The Snubberless™ versions (BTA/BTB...W and
T12 series) are especially recommended for use
on inductive loads, because of their high
commutation performance. The BTA series
provide an insulated tab (rated at 2500 V
RMS
).
Description
Available either in through-hole or surface mount
packages, the BTA12, BTB12 and T12xx Triac
series are suitable for general purpose mains
power AC switching.
Table 1: Device summary
Features
Medium current Triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated BTA
High commutation (4Q) or very high
commutation (3Q) capability
BTA series UL1557 certified (file ref: 81734)
Packages are RoHS (2002/95/EC) compliant
BTA12, BTB12, T12xx
2/13
DocID7473 Rev 10
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
I²PAK / D²PAK /
TO-220AB
Tc = 105 °C
12
A
TO-220AB Ins.
Tc = 90 °C
I
TSM
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
F = 50 Hz
tp = 20 ms
120
A
F = 60 Hz
tp = 16.7 ms
126
I2t
I2t value for fusing
tp = 10 ms
78
A2s
dl/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125 °C
50
A/µs
V
DSM/VRSM
Non repetitive surge peak off-state voltage
tp = 10 ms
Tj = 25 °C
V
DRM/VRRM
+
100
V
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125 °C
1 W T
stg
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +125
°C
Symbol
Parameter
Quadrant
T1205
BTB12-TW
BTA12-TW
T1210
BTB12-SW
BTA12-SW
T1235
BTB12-CW
BTA12-CW
T1250
BTB12-BW
BTA12-BW
Unit
I
GT
(1)
VD = 12 V,
RL = 30 Ω
I - II - III
Max. 5 10
35
50
mA
VGT
Max.
1.3
V
VGD
VD = V
DRM
,
RL = 3.3 kΩ,
Tj = 125 °C
Min.
0.2
V
IL
IG = 1.2 x IGT
I - III
II
Max.
10
15
25
30
50
60
70
80
mA
I
H
(2)
ITM = 100 mA
Max.
10
15
35
50
mA
dV/dt
(2)
VD = 67 % V
DRM
gate open, 125 °C
Min.
20
40
500
1000
V/µs
(dI/dt)c
(2)
(dV/dt)c = 0.1 V/μs, 125 °C
Min.
3.5
6.5
A/ms
(dV/dt)c = 10 V/μs, 125 °C
1
2.9
Without snubber, 125 °C
6.5
12
Notes:
(1)
Minimum IGT is guaranteed at 5% of IGT max.
(2)
For both polarities of A2 referenced to A1
1 Characteristics
Table 3: Electrical characteristics (Tj = 25 °C, unless otherwise specified) -
Snubberless and logic level Triac (3 quadrants)
Table 2: Absolute maximum ratings
BTA12, BTB12, T12xx
DocID7473 Rev 10
3/13
Symbol
Parameter
Quadrant
Value
Unit
C
B
I
GT
(1)
VD = 12 V, RL = 30 Ω
I - II - III
IV
Max.
25
50
50
100
mA
VGT
All
Max.
1.3
V
VGD
VD = V
DRM
, RL = 3.3 kΩ, Tj = 125 °C
All
Min.
0.2
V
IL
IG = 1.2 x IGT
I - III - IV
II
Max.
40
80
50
100
mA
I
H
(2)
ITM = 500 mA
Max.
25
50
mA
dV/dt
(2)
VD = 67 % V
DRM
, gate open, 125 °C
Min.
200
400
V/µs
(dV/dt)c
(2)
(dI/dt)c = 5.3 A/ms, 125 °C
Min. 5 10
Notes:
(1)
Minimum IGT is guaranteed at 5% of IGT max.
(2)
For both polarities of A2 referenced to A1.
Symbol
Test Conditions
Tj
Value
Unit
V
TM
(1)
ITM = 17 A, tp = 380 µs
25 °C
Max.
1.55
V
V
TO
(2)
threshold on-state voltage
125 °C
Max.
0.85
V
R
D
(2)
Dynamic resistance
125 °C
Max.
35
mΩ
I
DRM/IRRM
V
DRM
= V
RRM
25 °C
Max.
5
µA
125 °C
1
mA
Notes:
(1)
For both polarities of A2 referenced to A1
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
D²PAK /
TO-220AB
Max.
1.4
°C/W
TO-220AB insulated
2.3
R
th(j-a)
Junction to ambient (S = 1 cm²)
(1)
D²PAK
Typ.
45
Junction to ambient
TO-220AB /
TO-220AB insulated
Typ.
60
Notes:
(1)
Copper surface under tab.
Table 4: Electrical characteristics (Tj = 25 °C, unless otherwise specified) -
standard Triac (4 quadrants)
Table 5: Static electrical characteristics
Table 6: Thermal resistance
BTA12, BTB12, T12xx
4/13
DocID7473 Rev 10
Figure 1: Maximum power dissipation versus
on-state RMS current (full cycle)
Figure 2: RMS on-state current versus case
temperature (full cycle)
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35 μm) (full cycle)
Figure 4: Relative variation of thermal impedance
versus pulse duration
Figure 5: On-state characteristics
(maximum values)
Figure 6: Surge peak on-state current versus
number of cycles
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12
P(W)
I
T(RMS)
(A)
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
25 50 75 100 125
T (°C)
C
BTA
BTB / T1 2
I
T(RMS)
(A)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T (°C)
C
D PA K
(S = 1c m )
2
2
I
T(RMS)
(A)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-2
1E-1
1E+0
K= [Z /R
th th
]
tP(s)
Z
th(j-c)
Z
th(j-a)
1.1 Characteristics (curves)
Loading...