STMicroelectronics BTA12, BTB12 User Manual
®
BTA12, BTB12 and T12 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD
Table 1: Main Features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
12 A
600 and 800 V
5 to 50 mA
DESCRIPTION
Available either i n through-hole or sur face-mount
packages, the BTA12, BTB12 and T12 triac series
is suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications such as static relays, heat ing regulation, induction motor starting circuits... or for phase
control operation in light dimmers, motor speed
controllers,...
The snubberless versions (BTA /BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their hi gh commutation
performances.
Logic level versions are designed to interface
directly with low power drivers such as
microcontrollers.
By using an internal cer amic pad, the BT A series
provides voltage insulated tab (rated at
2500V
) complying with UL standards (File ref.:
RMS
E81734).
A2
G
A1
A2
A1
A2
G
A1
D2PAK
(T12-G)
A1
A2
G
A1
TO-220AB Insulated
(BTA12)
Table 2: Order Codes
Part Number Marking
BTA12-xxxxxRG
BTB12-xxxxxRG
T12xx-xxxG
See page table 8 on
T12xx-xxxG-TR
T12xx-xxxR
12A TRIACS
A2
A2
G
I2PAK
(T12-R)
A2
A2
G
TO-220AB
(BTB12)
page 9
REV. 8July 2005
1/10
BTA12, BTB12 and T12 Series
Table 3: Absolute Maximum Ratings
Symbol Parameter Value Unit
2
PAK/D2PAK/
I
T(RMS)
I
TSM
²
I
tI
dI/dt
V
DSM/VRSM
RMS on-state current
(full sine wave)
Non repetitive surge p eak on-state
current (full cycle, T
²
t Value for fusing
initial = 25°C)
j
Critical rate of rise of on-state cur-
= 2 x IGT , tr ≤ 100 ns
rent I
G
Non repetitive surge peak off-state
voltage
I
TO-220AB
TO-220AB Ins.
F = 50 Hz t = 20 ms 120
F = 60 Hz t = 16.7 ms 126
t
= 10 ms
p
F = 120 Hz
= 10 ms Tj = 25°C
t
p
= 105°C
T
c
= 90°C
T
c
T
= 125°C
j
12 A
78
50 A/µs
V
DRM/VRRM
+ 100
A
²
s
A
V
I
GM
P
G(AV)
T
stg
T
j
Tables 4: Electrical Characteristics (T
■ SNUBBERLESS and Logic Level (3 quadrants)
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
= 25°C, unless otherwise specified)
j
t
Symbol Test Conditions Quadrant
T1205 T1235 TW SW CW BW
I
(1)
GT
V
GT
= 12 V
V
D
R
= 30 Ω
L
VD = V
R
V
GD
(2) IT = 100 mA
I
H
I
L
= 3.3 kΩ
L
T
= 125°C
j
IG = 1.2 I
DRM
GT
I - II - III MAX. 5 35 5 10 35 50 mA
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2 V
MAX. 10 35 10 15 35 50 mA
I - III
MAX.
II 15 60 15 30 60 80
= 20 µs Tj = 125°C
p
T
= 125°C
j
4A
1W
- 40 to + 150
- 40 to + 125
T12 BTA12 / BTB12
10 50 10 25 50 70
°C
Unit
mA
dV/dt (2)
(dI/dt)c (2)
2/10
V
= 67 %V
D
T
= 125°C
j
gate open
DRM
(dV/dt)c = 0.1 V/µs
Tj = 125°C
(dV/dt)c = 10 V/µs
T
= 125°C
j
Without snubber
T
= 125°C
j
MIN. 20 500 20 40 500 1000 V/µs
3.5 3.5 6.5
MIN.
112.9
A/ms
6.5 6.5 12
■ Standard (4 quadrants)
BTA12, BTB12 and T12 Series
Symbol Test Conditions Quadrant
BTA12 / BTB12
CB
I
(1)
GT
V
= 12 V RL = 30 Ω
D
V
GT
V
GD
(2) IT = 500 mA MAX. 25 50 mA
I
H
I
L
dV/dt (2) V
VD = V
IG = 1.2 I
= 67 %V
D
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms T
RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V
DRM
GT
gate open Tj = 125°C MIN. 200 400 V/µs
DRM
= 125°C MIN. 5 10 V/µs
j
I - II - III
IV
MAX. 25
50
50
100
ALL MAX. 1.3 V
I - III - IV MAX. 40 50 mA
II 80 100
Table 5: Static Characteristics
Symbol Test Conditions V alue Unit
V
(2) ITM = 17 A tp = 380 µs Tj = 25°C
T
(2)
V
t0
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
Threshold voltage
Dynamic resi st anc e
V
= V
DRM
RRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
T
= 125°C
j
MAX. 1.55 V
MAX. 0.85 V
MAX. 35 mΩ
5µA
MAX.
1mA
Unit
mA
Table 6: Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC)
2
I
PAK / D2PAK / TO-220AB
1.4
TO-220AB Insulated 2.3
Junction to ambient
R
th(j-a)
S = Copper surface under tab.
S = 1 cm
²D2
PAK
TO-220AB / I
TO-220AB Insulated
2
PAK
45
60
°C/W
°C/W
3/10
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