Page 1
®
BTA/BTB06 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD 6A TRIACS
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
G (Q1)
6A
600 and 800 V
5 to 50 mA
DESCRIPTION
Suitable for AC switching operations, the BTA/
BTB06 series can be used as an ON/OFF function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, than ks to their high com mutation
performances. By usin g an internal ceramic pa d,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A1
A2
G
TO-220AB Insulated
(BTA06)
A2
G
A1
A2
A1
A2
G
TO-220AB
(BTB06)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
T
April 2002 - Ed: 5A
RMS on-state current (full sine wave) TO-220AB Tc = 110°C
TO-220AB Ins. Tc = 105°C
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
tI
²
t Value for fusing
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
F = 50 Hz t = 20 ms 60 A
F = 60 Hz t = 16.7 ms 63
tp = 10 ms 21
F = 120 Hz Tj = 125°C 50 A/µs
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temp erature range
j
- 40 to + 150
- 40 to + 125
6
A
A
°C
²
s
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Page 2
BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB06
TW SW CW BW
I
(1)
GT
V
V
GT
GD
= 12 V RL = 30 Ω
V
D
VD = V
RL = 3.3 kΩ
DRM
Tj = 125°C
I
(2)
H
I
L
dV/dt (2) V
= 100 mA
I
T
I
= 1.2 I
G
= 67 %V
D
GT
gate open
DRM
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 2.7 3.5 - - A/ms
(dV/dt)c = 10 V/µs Tj = 125°C 1.2 2.4 - Without snubber
■ ST ANDARD (4 Quadrants)
Tj = 125°C - - 3.5 5.3
Symbol Test Conditions Quadrant BTA/BTB06
(1)
I
G
V
GT
V
GD
I
(2)
H
I
L
dV/dt (2) V
= 12 V RL = 30 Ω
V
D
VD = V
= 500 mA
I
T
IG = 1.2 I
= 67 %V
D
RL = 3.3 kΩ Tj = 125°C
DRM
GT
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
I - II - III MAX. 5 10 35 50
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2
MAX.10153550mA
I - III MAX. 10 25 50 70 mA
II 15 30 60 80
MIN. 20 40 400 1000 V/µs
CB
I - II - III
IV
MAX.
25
50
50
100
ALL MAX. 1.3 V
ALL MIN.
0.2 V
MAX. 25 50 mA
I - III - IV MAX. 40 50 mA
II 80 100
MIN. 200 400 V/µs
Tj = 125°C MIN. 5 10 V/µs
Unit
mA
V
Unit
mA
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
V
(2) ITM = 5.5 A tp = 380 µs
T
(2)
V
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 60 mΩ
V
= V
DRM
RRM
2/6
Tj = 25°C MAX. 1.55 V
Tj = 25°C
Tj = 125°C 1 mA
MAX.
5µA
Page 3
BTA/BTB06 Series
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
PRODUCT SELECTOR
Junction to case (AC) TO-220AB 1.8 °C/W
TO-220AB Insulated 2.7
Junction to ambient TO-220AB
TO-220AB Insulated
60
°C/W
Part Number
BTA/BTB06-xxxB X X 50 mA Standard TO-220AB
BTA/BTB06-xxxBW X X 50 mA Snubberless TO-220AB
BTA/BTB06-xxxC X X 25 mA Standard TO-220AB
BTA/BTB06-xxxCW X X 35 mA Snubberless TO-220AB
BTA/BTB06-xxxSW X X 10 mA Logic level TO-220AB
BTA/BTB06-xxxTW X X 5 mA Logic level TO-220AB
BTB: non insulated TO-220AB package
Voltage (xxx)
Sensitivity Type
600 V 800 V
Package
ORDERING INFORMATION
BT A 06 - 600 BW (RG)
TRIAC
SERIES
INSULATION:
A: insulated
B: non insulated
CURRENT:6A
VOLTAGE:
600: 600V
800: 800V
SENSITIVITY &TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
TW: 5mA LOGIC LEVEL
PACKING MODE
Blank: Bulk
RG:Tube
OTHER INFORMATION
Part Number Marking Weight
BTA/BTB06-xxxyz BTA/BTB06-xxxyz 2.3 g 250 Bulk
BTA/BTB06-xxxyzRG BTA/BTB06-xxxyz 2.3 g 50 Tube
Note: xxx = voltage, y = sensitivity, z = type
Base
quantity
Packing
mode
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Page 4
BTA/BTB06 Series
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
8
7
6
5
4
3
2
1
0
0123456
IT(RMS)(A)
Fig. 3: Relative variation of thermal im pedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
1E-1
Zth(j-a)
Fig. 2: RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
7
6
5
BTB
BTA
4
3
2
1
0
0 25 50 75 100 125
Tc(°C)
Fig. 4: On-state characteristics (maximum
values).
ITM (A)
100
10
Tj max.
Vto = 0.85 V
Rd = 60 m
Tj=Tj max
Ω
1E-2
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
tp(s)
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM (A)
70
60
50
40
30
20
Repetitive
Tc=105°C
10
0
1 10 100 1000
Non repetitive
Tj initial=25°C
Number of cycles
t=20ms
One cycle
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
1000
dI/dt limitation:
50A/µs
100
tp (ms)
10
0.01 0.10 1.00 10.00
Tj initial=25°C
ITSM
I²t
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Page 5
BTA/BTB06 Series
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
1.5
1.0
IH & IL
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
C
1.8
1.6
1.4
B
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1.0 10.0 100.0
(dV/dt)c (V/µs)
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
SW
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1.0 10.0 100.0
TW
BW/CW
(dV/dt)c (V/µs)
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
0
0 25 50 75 100 125
Tj(°C)
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Page 6
BTA/BTB06 Series
PACKAGE MECHANICAL DAT A
TO-22 0AB / TO-22 0AB I ns.
B
L
I
A
l4
a1
l3
l2
a2
b1
e
DIMENSIONS
C
b2
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
F
a1 3.75 0.147
a2 13.00 14.00 0.511 0. 551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0. 181
c2
c1 0.49 0.70 0.019 0. 027
c2 2.40 2.72 0.094 0. 107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0. 151
I4 15.80 16.40 16.80 0.622 0.646 0.661
M
c1
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
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by implic ation or otherwise under any patent or patent rights of STMi croelect ronics. Specifications mentioned in thi s publica tion are subject
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