ST MICROELECTRONICS BDX 54A Datasheet
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BDX53/A/B/C
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX54/A/B/C
APPLICATIONS
·Power linear and switching applications
·Hammer drivers,audio amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
BDX53 45
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current-DC 8 A
ICM Collector current-Pulse 12 A
BDX53A 60
BDX53B 80
BDX53C
BDX53 45
BDX53A 60
BDX53B 80
BDX53C
Open emitter
Open base
V
100
V
100
IB Base current 0.2 A
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 2.08
th j-c
60 W
℃
℃
℃/W
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BDX53/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BDX53 45
V
CEO(SUS)
V
CEsat
V
BE sat
I
CBO
I
CEO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V
Base-emitter saturation voltage IC=3A ,IB=12mA 2.5 V
Collector cut-off current
Collector cut-off current
BDX53A 60
IC=0.1A, IB=0
BDX53B 80
BDX53C
BDX53 VCB=45V, IE=0
BDX53A VCB=60V, IE=0
BDX53B VCB=80V, IE=0
BDX53C V
BDX53 VCE=22V, IB=0
BDX53A VCE=30V, IB=0
BDX53B VCE=40V, IB=0
=100V, IE=0
CB
100
0.2 mA
0.5 mA
V
I
Emitter cut-off current VEB=5V; IC=0 2.0 mA
EBO
h
DC current gain IC=3A ; VCE=3V 750
FE
V
Forward diode voltage IF=3A 1.8 2.5 V
F-1
V
Forward diode voltage IF=8A 2.5 V
F-2
2
BDX53C V
=50V, IB=0
CE
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