ST MICROELECTRONICS BDX 33C Datasheet
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BDX33/A/B/C
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX34/A/B/C
APPLICATIONS
·For power linear and switching
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
BDX33 45
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current-DC 10 A
ICM Collector current-Pulse 15 A
BDX33A 60
BDX33B 80
BDX33C
BDX33 45
BDX33A 60
BDX33B 80
BDX33C
Open emitter
Open base
V
100
V
100
IB Base current 0.25 A
PC Collector power dissipation TC=25℃ 70 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.78
th j-c
℃/W
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BDX33/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BDX33 45
V
CEO(SUS)
V
CEsat
VBE
I
CBO
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Base-emitter
on voltage
Collector
cut-off current
BDX33A 60
IC=0.1A, IB=0
BDX33B 80
BDX33C
BDX33/33A IC=4A ,IB=8mA
BDX33B/33C I
BDX33/33A IC=4A ; VCE=3V
BDX33B/33C I
BDX33 VCB=45V, IE=0
BDX33A VCB=60V, IE=0
BDX33B VCB=80V, IE=0
BDX33C V
BDX33 VCE=22V, IB=0
=3A ,IB=6mA
C
=3A ; VCE=3V
C
=100V, IE=0
CB
100
2.5 V
2.5 V
0.2 mA
V
I
CEO
I
EBO
h
FE
VF Forward diode voltage IF=8A 4.0 V
Collector
cut-off current
Emitter cut-off current VEB=5V; IC=0 5 mA
DC current gain
2
BDX33A VCE=30V, IB=0
BDX33B VCE=40V, IB=0
BDX33C V
BDX33/33A IC=4A ; VCE=3V
BDX33B/33C I
=50V, IB=0
CE
=3A ; VCE=3V
C
0.5 mA
750
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