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BDW93CFP
®
COMPLEMENTARY SILICON POWER
■ STMicroelectronics P REF ERRED
SALESTYPES
■ MONOLIT HIC DA RLING T O N
CONFIGU R ATIO N
■ COMPLEMENTARY PNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■ FULLY MOLDED INS ULAT ED PA CKA G E
■ 2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93CFP is a silicon Epitaxial-Bas e NPN
transistor in monolithic Darlington configuration
mounted in TO-220FP fully molded insulated
package. It is intented for use in power linear
and switching applications.
The complementary PNP type is the BDW94CFP.
BDW94CFP
DARLINGTON TRANSISTORS
3
2
1
T0-220FP
INTER NAL SCH E M ATI C DIAG RA M
Typ. = 10 KΩ R2 Typ. = 150 Ω
R
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93CFP
PNP BDW94CFP
V
V
I
P
T
For PNP types voltage and current values are negative.
September 2001
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Collector Current 12 A
I
C
Collector Peak Current 15 A
CM
Base Current 0.2 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
33 W
o
C
o
C
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BDW93CFP / BDW94CFP
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 3.8
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 100 V
V
CB
V
= 100 V T
CB
= 80 V 1 mA
V
CE
= 5 V
V
EB
= 150 oC
case
100
5
2mA
= 100 mA 100 V
I
C
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 3 A VCE = 3 V
FE
V
* Parallel-diode Forward
F
Voltage
h
Small Signal Current
fe
Gain
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
IC = 5 A IB = 20 mA
I
= 10 A IB = 100 mA
C
IC = 5 A IB = 20 mA
I
= 10 A IB = 100 mA
C
1000
I
= 5 A VCE = 3 V
C
I
= 10 A VCE = 3 V
C
750
100
IF = 5 A
I
= 10 A
F
IC = 1 A VCE = 10 V
f = 1 MHz 20
1.3
1.8
2
3
2.5
4
20000
2
4
µA
mA
V
V
V
V
V
V
Safe Operating Are a
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TO-220FP MECHANICAL DATA
BDW93CFP / BDW94CFP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
A
B
H
E
D
L3
L6
L7
¯
F1
F
G1
G
F2
123
L2
L4
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BDW93CFP / BDW94CFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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