BD439/BD440
®
BD441/BD442
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronics P REF ERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD439 and BD441 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package, intented for use in power linear and
switching applications.
The complementary PNP types are BD440, and
BD442 respectively.
SOT-32
1
2
3
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD439 BD441
PNP BD440 BD442
V
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 60 80 V
CBO
Collector-Emitter Voltage (VBE = 0) 60 80 V
CES
Collector-Emitter Voltage (IB = 0) 60 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 4 A
C
Collector Peak Current (t ≤ 10 ms)
CM
I
Base Current 1 A
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
7A
36 W
o
C
o
C
December 2000
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BD439/BD440/ BD441/BD 442
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.5
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CES
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
for BD439/440 V
for BD441/442 V
for BD439/440 V
for BD441/442 V
= 5 V 1 mA
V
EB
= 100 mA for DB439/440
I
C
for BD441/442
IC = 2 A IB = 0.2 A
= 60 V
CB
= 80 V
CB
= 60 V
CB
= 80 V
CB
∗ Base-Emitter Voltage IC = 10 mA VCE = 5 V
I
= 2 A VCE = 1 V
C
100
100
100
100
60
80
0.8 V
0.58
1.5
h
∗ DC Current Gain IC = 10 mA VCE = 5 V
FE
for BD439/440
for BD441/442
I
C
for BD439/440
for BD441/442
I
C
for BD439/440
for BD441/442
h
FE1/hFE2
* Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
∗ Matched Pair IC = 500 mA VCE = 1 V 1.4
f
Transition frequency IC = 250 mA VCE = 1 V 3 MHz
T
= 500 mA VCE = 1 V
= 2 A VCE = 1 V
20
15
40
40
25
15
130
130
140
140
µA
µA
µA
µA
V
V
V
V
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BD439/BD440/BD441/BD442
SOT- 32 (TO-12 6) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0. 9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
mm inch
H2
c1
0016114
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BD439/BD440/ BD441/BD 442
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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