BD433/5/7
®
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronics P REF ERRED
SALESTYPE
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectively.
SOT-32
1
2
3
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD433 BD435 BD437
PNP BD434 BD436 BD438
V
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 22 32 45 V
CBO
Collector-Emitter Voltage (VBE = 0) 22 32 45 V
CES
Collector-Emitter Voltage (IB = 0) 22 32 45 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (t ≤ 10 ms)
CM
I
Base Current 1 A
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
7A
36 W
o
C
o
C
February 2003
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BD433 BD434 BD435 BD436 BD43 7 BD438
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.5
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
= 0)
E
for BD433/434 V
for BD435/436 V
for BD437/438 V
I
CES
Collector Cut-off
Current (V
BE
= 0)
for BD433/434 V
for BD435/436 V
for BD437/438 V
I
EBO
V
CEO(sus)
V
CE(sat)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
V
I
for BD435/436
for BD437/438
IC = 2 A IB = 0.2 A
for BD433/434
for BD435/436
for BD437/438
V
∗ Base-Emitter Voltage IC = 10 mA VCE = 5 V
BE
I
for BD433/434
for BD435/436
for BD437/438
h
∗ DC Current Gain IC = 10 mA VCE = 5 V
FE
for BD433/434
for BD435/436
for BD437/438
I
I
for BD433/434
for BD435/436
for BD437/438
h
FE1/hFE2
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗ Matched Pair IC = 500 mA VCE = 1 V 1.4
f
Transition frequency IC = 250 mA VCE = 1 V 3 MHz
T
= 22 V
CB
= 32 V
CB
= 45 V
CB
= 22 V
CE
= 32 V
CE
= 45 V
CE
= 5 V 1 mA
EB
= 100 mA for BD433/434
C
22
32
45
0.2
0.2
0.2
0.58
= 2 A VCE = 1 V
C
130
130
130
140
= 500 mA VCE = 1 V
C
= 2 A VCE = 1 V
C
40
40
30
85
50
50
40
100
100
100
100
100
100
0.5
0.5
0.6
1.1
1.1
1.2
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
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1: Base
2: Collector
3: Emitter
BD433 BD434 BD435 BD436 BD437 BD438
SOT- 32 (TO-12 6) MECHAN ICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
b 0.7 0.9 0.028 0.035
b1 0.40 0.65 0.015 0.025
C 2.4 2.7 0.094 0.106
c1 1.0 1.3 0.039 0.051
D 15.4 16.0 0.606 0.630
e 2.2 0.087
e3 4.4 0.173
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
I 1.27 0.05
O 0.3 0.011
V10
mm inch
o
10
o
0016114/B
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BD433 BD434 BD435 BD436 BD43 7 BD438
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
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