BD241A/B/C
®
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronics P REF ERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectively.
TO-220
3
2
1
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241A BD241B BD241C
PNP BD242A BD242B BD242C
V
V
V
I
P
P
T
Collector-Base Voltage (RBE = 100 Ω)
CER
Collector-Emitter Voltage (IB = 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 3 A
I
C
Collector Peak Current 5 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
amb
≤ 25 oC
70 90 115 V
40 W
2W
o
C
December 2000
1/4
BD241A/B/C /BD242A/ B/C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.13
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
= rated V
V
CE
for BD241A/BD242A V
for BD241B/BD242B V
for BD241C/BD242C V
= 5 V 1 mA
V
EB
CEO
= 30 V
CE
= 60 V
CE
= 60 V
CE
0.2 mA
0.3
0.3
0.3
IC = 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
60
80
100
IC = 3 A IB = 0.6 A 1.2 V
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 3 A VCE = 4 V 1.8 V
BE
h
∗ DC Current Gain IC = 1 A VCE = 4 V
FE
h
Small Signal Current
fe
Gain
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
I
= 3 A VCE = 4 V
C
IC = 0.5 A VCE = 10 V f = 1MHz
I
= 0.5 A VCE = 10 V f = 1KHz320
C
25
10
mA
mA
mA
V
V
V
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