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BD241A/B/C
®
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronics P REF ERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectively.
TO-220
3
2
1
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241A BD241B BD241C
PNP BD242A BD242B BD242C
V
V
V
I
P
P
T
Collector-Base Voltage (RBE = 100 Ω)
CER
Collector-Emitter Voltage (IB = 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 3 A
I
C
Collector Peak Current 5 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
amb
≤ 25 oC
70 90 115 V
40 W
2W
o
C
December 2000
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BD241A/B/C /BD242A/ B/C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.13
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
= rated V
V
CE
for BD241A/BD242A V
for BD241B/BD242B V
for BD241C/BD242C V
= 5 V 1 mA
V
EB
CEO
= 30 V
CE
= 60 V
CE
= 60 V
CE
0.2 mA
0.3
0.3
0.3
IC = 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
60
80
100
IC = 3 A IB = 0.6 A 1.2 V
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 3 A VCE = 4 V 1.8 V
BE
h
∗ DC Current Gain IC = 1 A VCE = 4 V
FE
h
Small Signal Current
fe
Gain
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
I
= 3 A VCE = 4 V
C
IC = 0.5 A VCE = 10 V f = 1MHz
I
= 0.5 A VCE = 10 V f = 1KHz320
C
25
10
mA
mA
mA
V
V
V
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TO-220 MECHANICAL DATA
BD241A/B/C /BD 242A/B/C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BD241A/B/C /BD 242A/ B/C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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