ST MICROELECTRONICS BD 140 STM Datasheet
BD136
®
Type Marking
BD136 BD136
BD136-10 BD136-10
BD136-16 BD136-16
BD138 BD138
BD140 BD140
BD140-10 BD140-10
BD140-16 BD140-16
■ STMicroelectronics P REFE RRE D
SALESTYPES
■ PNP TRANSISTO R
DESCRIPTION
The BD136, BD138 and BD140 are silicon
Epitaxial Planar PNP transistors mounted in
Jedec SOT-32 plastic package, designed for
audio amplifiers and drivers utilizing
complementary or quasi- com plement ary c ircuit s.
The complementary NPN types are the BD135
BD137 and BD139.
BD138/BD140
PNP SILICON TRANSISTORS
1
2
3
SOT-32
INTERNAL SCHEMAT I C DI AGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
BD136 BD138 BD140
V
V
V
I
P
P
T
November 2001
Collector-Base Voltage (IE = 0) -45 -60 -80 V
CBO
Collector-Emitter Voltage (IB = 0) -45 -60 -80 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -1.5 A
I
C
Collector Peak Current -3 A
CM
Base Current -0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
≤ 25 oC
amb
12.5 W
1.25 W
o
C
o
C
1/4
BD136 / BD138 / BD140
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 10
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
= -30 V
V
CB
V
= -30 V TC = 125 oC
CB
= -5 V -10 µA
V
EB
I
= -30 mA
C
for BD136
for BD138
for BD140
-45
-60
-80
-0.1
-10
IC = -0.5 A IB = -0.05 A -0.5 V
Saturation Voltage
V
∗ Base-Emitter Voltage IC = -0.5 A VCE = -2 V -1 V
BE
h
∗ DC Current Gain IC = -5 mA VCE = -2 V
FE
h
hFE Groups IC = -150 mA VCE = -2 V
FE
I
= -150 mA VCE = -2 V
C
I
= -0.5 A VCE = -2 V
C
for BD136/BD140 group-10
for BD136/BD140 group-16
* Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
25
40
25
63
100
250
160
250
µA
µA
V
V
V
Safe Operating A reas
2/4
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