BD136
®
Type Marking
BD136 BD136
BD136-10 BD136-10
BD136-16 BD136-16
BD138 BD138
BD140 BD140
BD140-10 BD140-10
BD140-16 BD140-16
■ STMicroelectronics P REFE RRE D
SALESTYPES
■ PNP TRANSISTO R
DESCRIPTION
The BD136, BD138 and BD140 are silicon
Epitaxial Planar PNP transistors mounted in
Jedec SOT-32 plastic package, designed for
audio amplifiers and drivers utilizing
complementary or quasi- com plement ary c ircuit s.
The complementary NPN types are the BD135
BD137 and BD139.
BD138/BD140
PNP SILICON TRANSISTORS
1
2
3
SOT-32
INTERNAL SCHEMAT I C DI AGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
BD136 BD138 BD140
V
V
V
I
P
P
T
November 2001
Collector-Base Voltage (IE = 0) -45 -60 -80 V
CBO
Collector-Emitter Voltage (IB = 0) -45 -60 -80 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -1.5 A
I
C
Collector Peak Current -3 A
CM
Base Current -0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
≤ 25 oC
amb
12.5 W
1.25 W
o
C
o
C
1/4
BD136 / BD138 / BD140
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 10
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
= -30 V
V
CB
V
= -30 V TC = 125 oC
CB
= -5 V -10 µA
V
EB
I
= -30 mA
C
for BD136
for BD138
for BD140
-45
-60
-80
-0.1
-10
IC = -0.5 A IB = -0.05 A -0.5 V
Saturation Voltage
V
∗ Base-Emitter Voltage IC = -0.5 A VCE = -2 V -1 V
BE
h
∗ DC Current Gain IC = -5 mA VCE = -2 V
FE
h
hFE Groups IC = -150 mA VCE = -2 V
FE
I
= -150 mA VCE = -2 V
C
I
= -0.5 A VCE = -2 V
C
for BD136/BD140 group-10
for BD136/BD140 group-16
* Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
25
40
25
63
100
250
160
250
µA
µA
V
V
V
Safe Operating A reas
2/4
SOT- 32 (TO-126) MECHANICAL DATA
1: Base
2: Collector
3: Emitter
BD136 / BD138 / BD140
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
b 0.7 0.9 0.028 0.035
b1 0.40 0.65 0.015 0.025
C 2.4 2.7 0.094 0.106
c1 1.0 1.3 0.039 0.051
D 15.4 16.0 0.606 0.630
e 2.2 0.087
e3 4.4 0.173
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
I 1.27 0.05
O 0.3 0.011
V10
mm inch
o
10
o
0016114/B
3/4
BD136 / BD138 / BD140
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under an y patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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