SGS-THOMSONPREFERREDSALESTYPES
DESCRIPTION
The BD135, BD137 and BD139 are silicon
epitaxial planar NPN transistors in Jedec SOT-32
plastic package, designed for audio amplifiers
and drivers utilizing complementary or quasi
compementarycircuits.
The complementary PNP types are the BD136
BD138 and BD140.
BD135
BD137/BD139
NPN SILICON TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val ue Uni t
BD135 BD137 BD139
V
V
V
I
P
P
T
Collector-B ase Volta ge (IE=0) 45 60 80 V
CBO
Collector-E mit t e r Voltage (IB=0) 45 60 80 V
CEO
Emitter-B ase Voltage ( IC=0) 5 V
EBO
Collector Current 1.5 A
I
C
Collector Peak Curr ent 3 A
CM
Base Current 0.5 A
I
B
Total Dissipation at Tc≤ 25oC 12.5 W
tot
Total Dissipation at T
tot
St orage Tempera tu re -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
≤ 25oC1.25W
amb
o
C
o
C
October 1995
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BD135/BD137/BD139
THERMAL DATA
R
thj-case
Therm al Resistanc e Juncti on-c ase Max 10
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symb ol Paramete r Test Condi ti ons Min . Typ . Max. Uni t
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collect or Cut- of f
Current (I
E
=0)
Emitter Cut-off Current
=0)
(I
C
∗ Collector-Emitter
Sust aining V olt a ge
∗ Collector-Emitter
V
=30V
CB
=30V TC=125oC
V
CB
V
=5V 10 µA
EB
0.1
10
IC=30mA
for BD135
for BD137
for BD139
45
60
80
IC=0.5A IB=0.05A 0.5 V
Sat urat ion Volt age
∗ Base-Emitter Voltage IC=0.5A VCE=2V 1 V
V
BE
h
∗ DC Current Gain IC=5mA VCE=2V
FE
h
hFEGr oups IC=150mA VCE=2V
FE
=0.5A VCE=2V
I
C
=150mA VCE=2V
I
C
25
25
40 250
for BD13 9 g r oup 10 63 160
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
µA
µA
V
V
V
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SOT-32 MECHANICAL DATA
BD135/BD137/B139
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.04 0.106
c1 1.2 0.047
D 15.7 0.618
e 2.2 0.087
e3 4.4 0.173
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
mm inch
0016114
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BD135/BD137/BD139
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences ofuse of such informationnor forany infringement of patents or other rightsof third parties which may results from its use. No
licenseis granted by implication orotherwise underany patent orpatent rightsof SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorized foruseas criticalcomponentsin lifesupportdevices or systemswithoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1995 SGS-THOMSONMicroelectronics - All Rights Reserved
Australia- Brazil - France- Germany - HongKong -Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands-
Singapore- Spain- Sweden- Switzerland- Taiwan - Thailand - United Kingdom - U.S.A
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