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BAT42
®
BAT43
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicondiodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic dis-
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive Peak Reverse Voltage 30 V
Forward Continuous Current Ta= 25°C 200 mA
Repetitive Peak Fordware Current tp≤ 1s
δ ≤ 0.5
Surge non Repetitive Forward Current* tp= 10ms 4 A
Power Dissipation* Tl= 65 °C 200 mW
Storage and Junction Temperature Range - 65 to +150
j
Maximum Temperature for Soldering during 10s at 4mm from
Case
DO-35
500 mA
- 65 to +125
230
°C
°C
°C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
* On infinite heatsink with 4mm lead length
October 2001 - Ed: 1C
Junction-ambient* 300 °C/W
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BAT42 / BAT43
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
*
V
F
*
I
R
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CT
trr
h
Tj = 25°C
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
= 100°ÉC 100
T
j
= 25°C VR= 1V f = 1MHz 7 pF
j
Tj = 25°CI
= 100Ω
R
L
= 25°C RL= 15KΩ CL= 300pF f = 45MHz Vi= 2V
T
j
= 10mA IR= 10mA irr= 1mA
F
I
= 100µA
R
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2mA
I
F
= 15mA
I
F
All Types 1 V
BAT 42 0.4
BAT 43 0.26 0.33
= 25V
V
R
30 V
0.65
0.45
0.5
5ns
80 %
µA
* Pulse test: tp≤ 300µs δ<2%.
Fig. 1:Forwardcurrentversus forward voltageat
different temperatures (typical values).
Fig. 2: Forward current versus forward voltage
(typical values).
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®
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BAT42 / BAT43
Fig. 3: Reverse current versus junction tempera-
ture (typical values).
Fig. 4: Reverse current versus continuous reverse voltage.
Fig. 5: Capacitance C versus reverse applied
voltage V
(typical values).
R
®
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BAT42 / BAT43
PACKAGE MECHANICAL DATA
DO-35
CA
C
/
BO
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 3.05 4.50 0.120 0.177
O
/
O
/
D
D
Cooling method: by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
B 1.53 2.00 0.060 0.079
C 28.00 1.102
D 0.458 0.558 0.018 0.022
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useof such information nor for any infringement ofpatentsorotherrights of third parties which may result from itsuse.Nolicense is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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®
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This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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