ST MICROELECTRONICS BAT 41 STM Datasheet

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®
BAT41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching.
This device has integrated protection against ex­cessive voltage such as electrostatic discharges.
DO-35
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P T
I
F
tot
stg
T
T
Repetitive Peak Reverse Voltage 100 V Forward Continuous Current* Ta= 25°C 100 mA Repetitive Peak Forward Current* tp≤ 1s
350 mA
δ ≤ 0.5
Surge non Repetitive Forward Current*
t
p
10ms
750 mA Power Dissipation* Ta= 95°C 100 mW Storage and Junction Temperature Range - 65 to +150
j
Maximum Lead Temperature for Soldering during 10s at 4mm
L
from Case
- 65 to +125 230
°C
°C °C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 300 °C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
VF* *
IR* *
Tj= 25°C IR= 100µA T
= 25°CI
j
= 25°CI
T
j
T
= 25°C
j
T
= 100°C 20
j
= 1mA
F
= 200mA
F
V
= 50V
R
100 V
0.4 0.45 V 1
0.1
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CT
* On infinite heatsink with 4mm lead length * * Pulse test: tp≤ 300µs δ<2%.
October 2001 - Ed: 1B
= 25°C VR= 1V f = 1MHz 2 pF
j
µA
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BAT41
Fig. 1: Forward current versus forward voltage at
different temperatures (typical values).
Fig. 2: Forward current versus forward voltage (typical values).
Fig. 3:Reversecurrentversus junctiontempera­ture.
Fig. 4: Reversecurrent versus continuous reverse voltage (typical values).
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Fig. 5: Capacitance C versus reverse applied voltage V
(typical values).
R
BAT41
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BAT41
PACKAGE MECHANICAL DATA
DO-35
REF. DIMENSIONS
CA
O
/
D
C
O
/
D
BO
/
Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g
Millimeters Inches
Min. Max. Min. Max.
A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 28.00 1.102 D 0.458 0.558 0.018 0.022
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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