ST MICROELECTRONICS BAT 41 STM Datasheet
®
BAT41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges.
DO-35
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
Repetitive Peak Reverse Voltage 100 V
Forward Continuous Current* Ta= 25°C 100 mA
Repetitive Peak Forward Current* tp≤ 1s
350 mA
δ ≤ 0.5
Surge non Repetitive Forward Current*
t
p
≤ 10ms
750 mA
Power Dissipation* Ta= 95°C 100 mW
Storage and Junction Temperature Range - 65 to +150
j
Maximum Lead Temperature for Soldering during 10s at 4mm
L
from Case
- 65 to +125
230
°C
°C
°C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 300 °C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
VF* *
IR* *
Tj= 25°C IR= 100µA
T
= 25°CI
j
= 25°CI
T
j
T
= 25°C
j
T
= 100°C 20
j
= 1mA
F
= 200mA
F
V
= 50V
R
100 V
0.4 0.45 V
1
0.1
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CT
* On infinite heatsink with 4mm lead length
* * Pulse test: tp≤ 300µs δ<2%.
October 2001 - Ed: 1B
= 25°C VR= 1V f = 1MHz 2 pF
j
µA
1/4
BAT41
Fig. 1: Forward current versus forward voltage at
different temperatures (typical values).
Fig. 2: Forward current versus forward voltage
(typical values).
Fig. 3:Reversecurrentversus junctiontemperature.
Fig. 4: Reversecurrent versus continuous reverse
voltage (typical values).
2/4
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