STMicroelectronics BAR42FILM, BAR43AFILM, BAR43CFILM, BAR43FILM, BAR43SFILM Schematic [ru]
BAR42FILM
®
SMALL SIGNAL SCHOTTKY DIODE
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
(max) 0.33 and 0.40 V
V
F
FEATURES AND BENEFITS
■ Very small conduction losses
■ Negligible switching losses
■ Low forward voltage drop
■ Surface mount device
DESCRIPTION
Genral purpose metal to silicon diodes featuring
very low turn-on voltage and fast switching.
0.1 A
30 V
150°C
BAR43FILM
K
A
BAR42FILM
BAR43FILM
K
A1
BAR43CFILM
Table 2: Order Codes
Part Number Marking
BAR42FILM D94
BAR43FILM D95
BAR43AFILM DB1
BAR43CFILM DB2
BAR43SFILM DA5
A
Nc
K
A1
A2
K
A2
SOT23-3L
A
BAR43AFILM
A1
K2
BAR43ASFILM
K1
A
K1
K2
A2
K2
A2
A1
K1
K2
K1
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
P
T
T
T
Note 1: for double diodes, P
dPtot
------------- --
* : thermal runaway condition for a diode on its own heatsink
dTj
April 2005
Repetitive peak reverse voltage 30 V
Continuous forward current 0.1 A
Surge non repetitive forward current tp = 10ms sinusoidal 0.75 A
Power dissipation (note 1) T
tot
Maximum storage temperature range -65 to + 150 °C
stg
Maximum operating junction temperature * 150 °C
j
Maximum temperature for soldering during 10s 260 °C
L
is the total dissipation of both diodes.
tot
1
--------------- ----------->
Rth j a
–()
REV. 3
= 25°C 250 mW
amb
1/5
BAR42FILM / BAR43FILM
Table 4: Thermal Resistance
Symbol Parameter Value Unit
R
th(j-a)
(*) Mounted on epoxy board with recommended pad layout.
Junction to ambient (*) 500 °C/W
Table 5: Static Electrical Characteristics
Symbol Parameter Tests conditions Min. Typ Max. Unit
V
I
R
V
F
Pulse test: * tp = 5 ms, δ < 2%
Breakdown voltage Tj = 25°C IR = 100µA 30 V
BR
T
= 25°C
*
Reverse leakage current
**
Forward voltage drop
** tp = 380 µs, δ < 2%
j
T
= 100°C
j
Tj = 25°C
BAR42
BAR43
ALL
= V
V
R
I
= 10mA
F
= 50mA
I
F
I
= 2mA
F
I
= 15mA
F
I
= 100mA
F
RRM
0.35 0.40
0.50 0.65
0.26 0.33
500 nA
100
0.45
1
Table 6: Dynamic Characteristics (Tj = 25°C)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
µA
V
= 25°C VR = 1V F = 1 MHz
C Junction capacitance
t
Reverse recovery time
rr
η Detection efficiency
T
j
= 10 mA IR = 10 mA
I
F
T
= 25°C Irr = 1 mA RL = 100 Ω
j
C
= 300 pF F = 45 MHz
L
T
= 25°C Vi = 2 V RL = 50 Ω
j
Figure 1: Forward voltage drop versus forward
current (typical values, low level)
I (A)
FM
2.00E-2
1.80E-2
1.60E-2
1.40E-2
1.20E-2
1.00E-2
8.00E-3
6.00E-3
4.00E-3
2.00E-3
0.00E+0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
T =50°C
j
T =100°C
j
T =25°C
V (V)
FM
j
7pF
5ns
80 %
Figure 2: Forward voltage drop versus forward
current (typical values, high level)
I (A)
FM
5E-1
1E-1
T =100°C
j
T =50°C
1E-2
1E-3
j
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
T =25°C
j
V (V)
FM
2/5
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