STMicroelectronics ACS102-6T DATA SHEET

Main product characteristics

ACS102-6T

AC switch family

Transient protected AC switch (ACS™)

I

T(RMS)

V

DRM/VRRM

I

GT

■ Overvoltage protection by crowbar technology

■ High noise immunity - static dV/dt > 300 V/µs

0.2 A

600 V

5 mA

Applications

■ AC ON/OFF static switching in appliances and

industrial control systems

■ Drive of low power high inductive or resistive

loads like:
– relay, valve, solenoid,

– dispenser, door lock
– micro-motor

Benefits

■ Needs no external protection snubber or

varistor.

■ Enables equipment to meet IEC 61000-4-5.

■ Reduces component count by up to 80%.

■ Interfaces directly with the micro-controller.

■ Common package tab connection supports

connection of several alternating current
switches (ACS) on the same cooling pad.

■ Integrated structure based on ASD

technology

(1)

G

COM

COM

NC

SO-8

ACS102-6T1

NC

OUT

NC

NC

G

OUT

TO-92

ACS102-6TA

COM

Description

The ACS102-6T belongs to the AC line switch
family. This high performance switch can control a
load of up to 0.2A.

The ACS102-6T switch includes an overvoltage
crowbar structure to absorb the overvoltage
energy, and a gate level shifter driver to separate
the digital controller from the main switch. It is
triggered with a negative gate current flowing out
of the gate pin.

Functional diagram

OUT

G

Order code

Part number Marking

ACS102-6TA ACS1026T

ACS102-6TA-TR ACS1026T

ACS102-6T1 ACS1026T

ACS102-6T1-TR ACS1026T

1. ASD: Application Specific Devices

January 2006 1/11

COM Common drive reference to connect to the

mains
OUT Output to connect to the load.
G Gate input to connect to the controller through

gate resistor

TM: ACS is a trademark of STMicroelectronics

COM

Rev 1

www.st.com

11

1 Characteristics ACS102-6T

1 Characteristics

Table 1. Absolute maximum ratings (T

= 25 °C, unless otherwise specified)

amb

Symbol Parameter Value Unit

= 100 °C

I

T(RMS)

I

RMS on-state current (full sine wave)

Non repetitive surge peak on-state current

TSM

(full cycle sine wave, T

initial = 25 °C)

j

SO-08

f = 60 Hz t = 16.7 ms 7.6

f = 50 Hz t = 20 ms 7.3

I²t I²t Value for fusing

TO-92

dI/dt

V

V

P

T

1. according to test described by IEC 61000-4-5 standard and Figure 16

Critical rate of rise of on-state current
I

= 2xIGT, tr ≤ 100 ns

G

Non repetitive line peak mains voltage

PP

I

Peak gate current

GM

Peak positive gate voltage

GM

Average gate power dissipation

G(AV)

Storage junction temperature range

stg

Operating junction temperature range

T

j

(1)

f = 120 Hz

= 20 µs Tj = 125 °C

t

p

T

amb

T

amb

= 10 ms

t

p

= 125 °C

T

j

Tj = 25 °C

= 125 °C

T

j

= 125 °C

T

j

= 100 °C

0.2 A

0.38 A²s

50 A/µs

2kV

1A

10 V

0.1 W

-40 to +150

-30 to +125

A

°C

Table 2. Electrical characteristics (T

= 25 °C, unless otherwise specified)

j

Symbol Test conditions Quadrant Value Unit

(1)

I

GT

V

GT

V

GD

(2)

I

H

(2)

I

L

dV/dt

(dI/dt)c

V

CL

1. minimum IGT is guaranteed at 10% of IGT max

2. for both polarities of OUT referenced to COM

V

= 12 V, RL = 33 Ω

OUT

V

= V

OUT

I

= 100 mA

OUT

IG = 1.2 x I

(2)

V

= 67% V

OUT

(2)

Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125 °C

, RL =3.3 kΩ, Tj = 125 °C

DRM

GT

gate open, Tj = 125 °C

DRM,

ICL = 0.1 mA, tp = 1 ms, Tj = 125 °C

II - III MAX 5

II - III MAX 0.9

II - III MIN 0.15

MAX 20

MAX 25

MIN 300

MIN 0.15

MIN 650

mA

V

V

mA

mA

V/µs

A/ms

V

2/11

ACS102-6T 1 Characteristics

Table 3. Static electrical characteristics

Symbol Test conditions Value Unit

(1)

V

TM

VTO

(1)

ITM= 0.3 A, tp = 380 µs

Tj = 25 °C MAX 1.2 V

Tj = 125 °C MAX 0.80 V

R

I

DRM

I

RRM

(1)

D

V

= 600 V

OUT

Tj = 125 °C MAX 500 mΩ

Tj = 25 °C

2µA

MAX

Tj = 125 °C 0.2 mA

1. for both polarities of OUT referenced to COM

Table 4. Thermal resistance

Symbol Parameter Value Unit

R

th (j-l)

R

th (j-a)

Figure 1. Maximum power dissipation vs RMS

P (W)

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20

Junction to lead (AC) TO-92 60

TO-92 150

Junction to ambient

S = 40 mm² SO-8 150

Figure 2. RMS on-state current vs ambient

on-state current (full cycle)

α=180°

I(A)

T(RMS)

180°

I (A)

T(RMS)

0.22

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

0 25 50 75 100 125

temperature (full cycle)

a=180°

Printed circuit board FR4

Natural convection

T°C

amb

°C/W

3/11

1 Characteristics ACS102-6T

Figure 3. Relative variation of junction to

ambient thermal impedance vs
pulse duration and package

K=[Z

1.E+00

1.E-01

1.E-02

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

th(j-a)/Rth(j-a)

TO-9 2

]

SO-8

t (S)

P

Figure 5. Non repetitive surge peak on-state

current vs number of cycles

I

(A)

TSM

10

9

8

7

6

5

4

3

2

1

0

1 10 100 1000

Repetitive

T

=100°C

amb

Non repetitive
Tj initial=25°C

t=20ms

One cycle

Number of cycles

Figure 4. Relative variation of gate trigger

current, holding current and
latching current vs junction
temperature

I

,I

,I

[T

]/I

,I

,I

[T

GT

H

L

IL& I

j

H

2.5

2.0

1.5

1.0

0.5

0.0

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

=25°C]

GT

H

L

j

I

GT

Tj(°C)

Figure 6. Non repetitive surge peak on-state

current for a sinusoidal pulse with
width tp<10 ms, and corresponding
value of I²t (T

(A), I²t (A²s)

I

TSM

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

0.01 0.10 1.00 10.00

initial = 25 °C).

j

I

TSM

(ms)t

p

Tj initial=25°C

I²t

4/11