STMicroelectronics 2N7000, 2N7002 User Manual
2N7000
2N7002
N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92
STripFET™II MOSFET
Table 1: General Features
TYPE V
2N7000
2N7002
Q TYPICAL R
Q LOW Q
Q LOW THRESHOLD DRIVE
g
DSS
60 V
60 V
(on) = 1.8Ω @10V
DS
R
DS(on)
< 5 Ω (@ 10V)
< 5 Ω (@ 10V)
I
d
0.35 A
0.20 A
DESCRIPTION
This MOSFET is the second gene ration of STM icroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing den sity for low onresistance, rugged a valanche character istics and
less critical alignment steps therefore a remarkable manufacturing repr odu ci bi lit y.
APPLICATIONS
Q HIGH SWITCHING APPLICATIONS
Figure 1: Package
3
2
1
SOT23-3L
TO-92
Figure 2: Internal Schematic Diagram
SOT23-3L TO-92
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
2N7000 2N7000G TO-92 BULK
2N7002 ST2N SOT23-3L TAPE & REEL
Rev. 3
1/11April 2005
2N7000 - 2N7002
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
TO-92 SOT23-3L
V
DS
V
DGR
V
GS
I
D
I
DM
P
TOT
() Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-amb Thermal Resistance Junction-ambient Max 125 357.1 (*) °C/W
T
J
T
stg
(#) When mounted on 1inch² FR-4, 2 Oz copper board.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 18 V
Drain Current (continu ou s) at TC = 25°C
()
Drain Current (pulsed ) 1.4 1 A
Total Dissipation at TC = 25°C
0.35 0.20 A
10.35W
TO-92 SOT23-3L
Operating Junction Temperature
Storage Temperature
- 55 to 150 °C
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 60 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125°C
V
= ± 18 V ±100 nA
GS
V
= VGS, ID = 250 µA
DS
VGS = 10 V, ID = 0.5 A
V
= 4.5 V, ID = 0.5 A
GS
12.1
1.8
2
1µA
10 µA
3V
5
5.3
Ω
Ω
2/11
2N7000 - 2N7002
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 10 V , ID= 0.5 A 0.6 S
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Table 7: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
(2)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 25 V, f = 1 MHz, VGS = 0 43
V
DS
= 30 V, ID = 0.5 A
V
DD
RG=4.7Ω VGS = 4.5 V
(see Figure 18)
VDD = 30 V, ID = 1 A,
VGS = 5 V
(see Figure 21)
ISD = 1 A, VGS = 0
ISD = 1 A, di/dt = 100 A/µs,
V
= 20 V, Tj = 150°C
DD
(see Figure 19)
20
6
5
15
7
8
1.4
0.8
0.5
32
25
1.6
2nC
0.35
1.40
1.2 V
pF
pF
pF
ns
ns
ns
ns
nC
nC
A
A
ns
nC
A
3/11
2N7000 - 2N7002
Figure 3: Safe Operating Area For TO-92
Figure 4: Safe Operating Area For SOT23-3L
Figure 6: Thermal Impedance For TO-92
Figure 7: Thermal Impedance For SOT23-3L
Figure 5: Output Characteristics
4/11
Figure 8: Transfer Characteristics
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