Figure 13.TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Outline . . . . . . . . . . . 22
4/25
Page 5
Summary descrip tionM27C2001
1 Summary description
The M27C2001 is a high speed 2 Mbit EPROM offered in the two ranges UV (ultra violet
erase) and OTP (one time programmable). It is ideally suited for microprocessor systems
requiring large programs and is organized as 262,144 by 8 bits.
The FDIP32W (window ceramic frit-seal package) has a transparent lids which allow the
user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be
written to the device by following the programming procedure.
For applications where the content is programmed only one time and erasure is not
required, the M27C2001 is offered in PDIP32, PLCC32 and TSOP32 (8 x 20 mm) packages.
®
In order to meet environmental requirements, ST offers the M27C2001 in ECOPACK
packages.
ECOPACK packages are Lead-free. The category of second Level Interconnect is marked
on the package and on the inner box label, in compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Figure 1.Logic Diagram
V
V
CC
PP
Table 1.Signal Names
A0-A17
18
P
E
G
M27C2001
V
SS
8
A0-A17Address Inputs
Q0-Q7Data Outputs
E
G
P
V
PP
V
CC
V
SS
Chip Enable
Output Enable
Program
Program Supply
Supply Voltage
Ground
Q0-Q7
AI00716B
5/25
Page 6
M27C2001Summary description
Figure 2.DIP Connections
1
V
A15
A12
PP
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q2
SS
2
3
4
5
6
7
8
M27C2001
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
AI00717
V
CC
PA16
A17
A14
A13
A8
A9
A11
G
A10
E
Q7
Q6
Q5Q1
Q4
Q3V
Figure 3.LCC Connections
A7
A6
A5
A4
A3
A2
A1
A0
Q0
9
A12
A15
M27C2001
Q1
Q2
A16
1
17
SS
V
VPPV
32
Q3
CC
Q4
P
Q5
A17
25
Q6
A14
A13
A8
A9
A11
G
A10
E
Q7
AI00718
6/25
Page 7
Summary descrip tionM27C2001
Figure 4.TSOP Connections
A11G
A13
A14
A17
V
CC
V
A16
A15
A12
1
A9
A8
P
M27C2001
8
(Normal)
9
PP
A7
A6
A5
A4A3
1617
32
25
24
AI01153B
A10
E
Q7
Q6
Q5
Q4
Q3
V
SS
Q2
Q1
Q0
A0
A1
A2
7/25
Page 8
M27C2001Device operation
2 Device operation
The operating modes of the M27C2001 are listed in the Table 2. A single power supply is
required in the read mode. All inputs are TTL levels except for V
Electronic Signature.
2.1 Read Mode
The M27C2001 has two control functions, both of which must be logically active in order to
obtain data at the outputs. Chip Enable (E
device selection. Output Enable (G
the output pins, independent of device selection. Assuming that the addresses are stable,
the address access time (t
available at t he output after a delay of t
been low and the addresses have been stable for at least t
AVQV
2.2 Standby Mode
The M27C2001 has a standby mode which reduces the supply current from 30mA to 100µA.
The M27C2001 is placed in the standby mode by applying a CMOS high signal to the E
input. When in the standby m ode, the outputs are in a high impedance state, i ndependent of
the G
input.
) is the power control and should be used for
) is the output control and should be used to gate data to
) is equal to the delay from E to output (t
from the falling edge of G, assuming that E has
GLQV
AVQV-tGLQV
and 12V on A9 for
PP
). Data is
ELQV
.
2.3 Two Line Output Control
Because EPROM devices are usually used in larger memory arrays, this product features a
2 line control function which accommodates the use of multiple memory connection. The
two line control function allows:
a) the lowest possible memory power dissipation,
b) complete assuranc e th at o utput bus conte n ti o n w ill n ot occ u r.
For the most efficient use of these two control lines, E
primary device selecting function, while G
devices in the array and connected to the READ
ensures that all deselected memory devices are in their low power standby mode and that
the output pins are only active when data is required from a particular mem ory device.
should be made a common connection to all
2.4 System Considerations
The power switching characteristics of Advanced CMOS EPROMs require careful
decoupling of the devices. The supply current, I
the system designer: the standby current level, the active current level, and transient current
peaks that are produced by the falling and rising edges of E
current peaks is dependent on the capacitive and inductive loading of the device at the
output. The associated transient voltage peaks can be suppressed by complying with the
two line output control and by properly selected decoupling capacitors. It is recommended
that a 0.1µF ceramic capacitor be used on every device between V
should be decoded and used as the
line from the system control bus. This
, has three segments that are of interest to
CC
. The magnitude of the transient
and VSS. This should
CC
8/25
Page 9
Device operationM27C2001
be a high frequency capacitor of low inherent inductance and should be placed as close to
the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be used
between V
and VSS for ev ery eight devices. The bulk capacitor should be located near the
CC
power supply connection point. The purpose of the bulk capacitor is to overcome the voltage
drop caused by the inductive effects of PCB traces.
2.5 Programming
When delivered (and after each erasure for UV EPROM), all bits of the M27C2001 are in the
'1' state. Data is introduced by selectively programming '0's into the desired bit locations.
Although only '0's will be programmed, both '1's and '0's can be present in the data word.
The only way to change a '0' to a '1' is by die exposure to ultraviolet light (UV EPROM). The
M27C2001 is in the programming mode when V
pulsed to V
. The data to be programmed is applied to 8 bits in parallel to the data output
IL
pins. The levels required for the address and data inputs are TTL. V
input is at 12.75V, E is at VIL and P is
PP
is specified to be
CC
6.25 ± 0.25V.
2.6 PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the whole array to be programmed with a
guaranteed margin, in a typical time of 26.5 seconds. Programming with PRESTO II
consists of applying a sequence of 100µs program pulses to each byte until a correct verify
occurs (see Figure 5). During programming and verify operation, a MARGIN MODE circuit is
automatically activated in order to guarantee that each cell is programmed with enough
margin. No overprogram pulse is applied since the verify in MARGIN MODE provides the
necessary margin to each programmed cell.
Figure 5.Programming Flowchart
VCC = 6.25V, VPP = 12.75V
NO
++n
= 25
YES
FAIL
n = 0
P = 100µs Pulse
NO
VERIFY
YES
Last
NO
Addr
YES
CHECK ALL BYTES
1st: VCC = 6V
2nd: VCC = 4.2V
++ Addr
AI00715C
9/25
Page 10
M27C2001Device operation
2.7 Program Inhibit
Programming of multiple M27C2001s in parallel with different data is also easily
accomplished. Except for E
common. A TTL low level pulse applied to a M27C2001's P
12.75V, will program that M27C2001. A high level E
being programmed.
, all like inputs including G of the parallel M27C2001 may be
input, with E low and VPP at
input inhibits the other M27C2001s from
2.8 Program Verify
A verify (read) should be performed on the programmed bits to determine that they were
correctly programmed. The verify is accomplished with E
12.75V and V
at 6.25V.
CC
and G at VIL, P at VIH, VPP at
2.9 Electronic Signature
The Electronic Signature (ES) mode allows the reading out of a binary code from an
EPROM that will identify its manufacturer and type. This mode is intended for use by
programming equipment to automatically match the device to be programmed with its
corresponding programming algorithm. The ES mode is functional in the 25 ± 5°C ambient
temperature range that is required when programming the M27C2001. To activate the ES
mode, the programming equipment must force 11.5 to 12.5V on address line A9 of the
M27C2001 with V
device outputs by toggling address line A0 from V
held at V
code and byte 1 (A0 = V
M27C2001, these two identifier bytes are given in Table 3 and can be read-out on outputs
Q7 to Q0.
during Electronic Signature mode. Byte 0 (A0 = VIL) represents the manufacturer
IL
= VCC = 5V. Two identifier bytes may then be sequenced from the
PP
) the device identifier code. For the STMicroelectronics
IH
to VIH. All other address lines must be
IL
2.10 Erasure operation (applies to UV EPROM)
The erasure characteristics of the M27C2001 are such that erasure begins when the cells
are exposed to light with wavelengths shorter than approximately 4000Å. It should be noted
that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000Å
range. Data shows that constant exposure to room level fluorescent lighting could erase a
typical M27C2001 in about 3 years, while it would take approximately 1 week to cause
erasure when exposed to direct sunlight. If the M27C2001 is to be exposed to these types of
lighting conditions for extended periods of time, it is suggested that opaque labels be put
over the M27C2001 window to prevent unintentional erasure. The recommended erasure
procedure for the M27C2001 is exposure to short wave ultraviolet light which has
wavel ength of 2537Å. The integrated dose (i.e. UV intensity x exposure time) for erasure
should be a minimum of 15W-s/cm2. The erasure time with this dosage is approximately 15
to 20 minutes using an ultraviolet lamp with 12000µW/cm2 power rating. The M27C2001
should be placed within 2.5cm (1 inch) of the lamp tubes during the erasure. Some lamps
have a filter on their tubes which should be removed before erasure.
Except for the rating "Operating Temperature Range", stresses above those listed in the
Table 4 may cause permanent dam age to the device. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE Program and other relevant quality documents.
Table 4.Absolute Maximum Ratings
SymbolParameterValueUnit
T
A
T
BIAS
T
STG
V
IO
V
CC
V
A9
V
PP
1. Depends on range.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than
20ns. Maximum DCvoltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less
than 20ns .
Ambient Operating Temperature
Temperature Under Bias–50 to 125 °C
Storage Temperature–65 to 150 °C
(2)
Input or Output Voltage (except A9)–2 to 7 V
Supply Voltage–2 to 7 V
(2)
A9 Voltage–2 to 13.5V
Program Supply Voltage–2 to 14V
(1)
–40 to 125 °C
12/25
Page 13
DC and AC parametersM27C2001
4 DC and AC para me ters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 5, Operating and AC Measurement Conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 5.AC Measurement conditions
High SpeedStandard
Input Rise and Fall Times≤ 10ns≤ 20ns
Input Pulse Voltages0 to 3V0.4V to 2.4V
Input and Output Timing Ref. Voltages1.5V0.8V and 2V
T able 6.Capacitance
SymbolParameterTest ConditionMinMaxUnit
(1)
(T
= 25°C, f = 1 MHz)
A
C
IN
C
OUT
1. Sampled only, not 100% tested
Input Capacitance VIN = 0V6pF
Output CapacitanceV
Figure 6.AC Testi ng Input Output Waveform
High Speed
3V
0V
Standard
2.4V
0.4V
= 0V12pF
OUT
1.5V
2.0V
0.8V
AI01822
13/25
Page 14
M27C2001DC and AC parameters
Figure 7.AC Testing Load Circuit
1.3V
1N914
3.3kΩ
DEVICE
UNDER
TEST
CL
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
OUT
AI01823B
Table 7.Read Mode DC Characteristics
(1)
(TA = 0 to 70°C or –40 to 85°C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
SymbolParameterTest ConditionMinMaxUnit
I
I
LO
I
CC
I
CC1
I
CC2
I
PP
V
V
IH
V
V
1. VCC must be applied simultaneously with or before VPP and removed simult aneously or after VPP.
2. Maximum DC voltage on Output is V
LI
IL
OL
OH
Input Leakage Current0V ≤ VIN ≤ V
Output Leakage Current0V ≤ V
Supply Current
E
= VIL, G = VIL,
I
= 0mA, f = 5MHz
OUT
Supply Current (Stand by) TTLE = V
OUT
≤ V
IH
CC
CC
Supply Current (Standby) CMOSE > VCC – 0.2V100µA
Program CurrentVPP = V
CC
Input Low Voltage–0.30.8V
(2)
Input High Voltage2VCC + 1V
Output Low VoltageIOL = 2.1mA0.4V
Output High Voltage TTLIOH = –400µA2.4V
Output High Voltage CMOSI
1. VCC must be applied simultaneously with or before VPP and removed simult aneously or after VPP.
2. Sampled only, not 100% tested.
(2)
t
t
t
t
t
Address Valid to Program Low2µs
AS
t
Input Valid to Program Low2µs
DS
VPSVPP
VCSVCC
CES
t
PW
t
DH
OES
t
OE
DFP
t
AH
High to Program Low2µs
High to Program Low2µs
Chip Enable Low to Program Low2µs
Program Pulse Width9510 5µs
Program High to Input Transition2µs
Input Transition to Output Enable Low2µs
Output Enable Lo w to Output Vali d100ns
Output Enable High to Output Hi-Z0130ns
Output Enable Hig h to Addr ess Transition0ns
17/25
Page 18
M27C2001DC and AC parameters
Figure 9.Programming and Verify Modes AC Waveforms
A0-A17
Q0-Q7
V
PP
V
CC
E
P
G
VALID
tAVPL
DATA INDATA OUT
tQVPL
tVPHPL
tVCHPL
tELPL
tPLPH
PROGRAMVERIFY
tPHQX
tQXGL
tGLQV
tGHQZ
tGHAX
AI00720
18/25
Page 19
Package mechanical dataM27C2001
5 Package mechanical data
T abl e 12.FDIP32W - 32 pin Ceramic Frit-seal DIP, with window , Packa ge Mechanical
Structure modified, ECOPACK text added.
LCCC32W package and t he additional burn-in opt ion (X) from
Ordering information scheme remov ed.
24/25
Page 25
M27C2001
y
y
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