STMicroelectronics 1N582x User Manual
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
1N582x
I
F(AV)
V
RRM
T
j
V
(max) 0.475 V
F
3A
40 V
150°C
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW FORWARD VOLTAGE DROP
n
AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
Repetitive peak reverse voltage
RMS forward current
Average forward current TL= 100°C δ= 0.5
T
= 110°C δ= 0.5
L
Surge non repetitive forward
current
Repetitive peak avalanche
tp=10ms
Sinusoidal
tp = 1µs Tj = 25°C
power
T
stg
Tj
dV/dt
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
DO-201AD
Value
1N5820 1N5821 1N5822
Unit
20 30 40 V
10 A
3A
33 A
80 A
1700 W
- 65 to + 150 °C
150 °C
10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 3A
thermal runaway condition for a diode on its own heatsink
−1()
1/5
1N582x
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
R
th (j-l)
Junction to ambient
Junction to lead
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit
Lead length = 10 mm 80 °C/W
Lead length = 10 mm 25 °C/W
*
I
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj = 25°CI
Tj=25°CV
Tj = 100°C
Tj=25°CI
R=VRRM
=3A
F
= 9.4 A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equations :
P=0.33xI
P=0.33xI
F(AV)
F(AV)
+ 0.035 I
+ 0.060 I
F2(RMS )
F2(RMS )
Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).
PF(av)(W)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
δ = 0.05
δ = 0.1
IF(av) (A)
for 1N5820 / 1N5821
for 1N5822
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
Fig. 2: Average forward power dissipation versus
average forward current (1N5822).
PF(av)(W)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
tp
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
222mA
20 20 20 mA
0.475 0.5 0.525 V
0.85 0.9 0.95 V
δ = 0.1
δ = 0.2
δ = 0.05
IF(av) (A)
δ
=tp/T
δ = 0.5
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
2/5
p
10 100 1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
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