STI MTP2N85 Datasheet

PRODUCT SPECIFICATIONS

SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP2N85

PH: [phone] FAX: [phone]
Website: http://www.semi-tech-inc.com

CASE OUTLINE: TO-220

N-CHANNEL POWER MOSFET

ABSOLUTE MAXIMUM RATING:

Drain – Source Voltage Vds 850 Volts
Drain – Gate Voltage Vdg 850 Volts
Drain Current – Continuous Id 2.0 Amps
Drain Current – Pulsed Idm 7.0 Amps
Gate – Source Voltage Vgs ±20 Volts

Power Dissipation TC = 25°C

Pd 75 W
Inductive Current IL Amps
Operating and Storage Temperature Tj & Tstg -65 to +150 °C
Lead Temperature From Case 275 °C

ELECTRICAL CHARACTERISTICS TA @ 25°°C

Parameters Symbol Test Conditions Min Typ Max Unit
Drain Source
Breakdown Voltage

BVDss ID = 5MA, VGS = 0V 850 V
Gate Threshold Voltage Vgs(th) ID = 1MA, VDS = VGS 2.0 4.5 V
Gate – Body Leakage

Current

IGSS Vgs = 20V, Vds = 0V 500 nA
Zero Gate Voltage

Drain Current

IDSS Vds = 725V, VGS = 0V .25 MA
Drain Source On

Resistance

Rds(on) ID =1.0A, VGS = 10V 8.0 Ω
Forward

Transconductance

gfs ID = 1.0A, VDS = 15V 0.5 Mhos
Drain-Source On-Voltage VDS(on) ID = 1.0A, VGS = 10V 5.0 V
Drain-Source On-Voltage VDS(on) ID = 1.0A, VGS = 10V, Tj = 100°C 10 V
Input Capacitance Ciss Vds = 25V, Vgs = 0V, f = 1 MHZ 1200 pF
Output Capacitance Coss Vds = 25V, Vgs = 0V, f = 1 MHZ 300 pF
Reverse Transfer

Capacitance

Crss Vds = 25V, Vgs = 0V, f = 1 MHZ 80 pF

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TYPE: MTP2N85

Drain Source Diode Characteristics Symbol Min Max Units
Forward On Voltage
IS = 2.0A

Vsd 1.3 V

Reverse Recovery Time
IS = 2.0A

trr 725* ns
Reverse Recovery Charge Qrr nC
Total Gate Charge Qg 37 nC
Gate – Source Charge Qgs 20* nC
Gate – Drain Charge Qgd 13* nC
* TYPICAL

Switching Characteristics Symbol Min Max Units

Turn-On Time Ton
Turn-Off Time Toff
Delay Time (Turn On) td(on) 50 ns
Rise Time tr 150 ns
Delay Time (Turn Off) td(off) 200 ns
Fall Time

VDS = 125V, ID = 1.0A
Rgen = 50 Ω

tf 100 ns

Thermal Characteristics Symbol Units

Junction To Case RθJC 1.67 °C/W
Junction To Ambient RθJA 62.5 °C/W
Internal Drain Inductance Ld 3.5* nH
Internal Source Inductance Ls 7.5* nH

* TYPICAL

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