Stanson STP9547S8 Schematic [ru]
DESCRIPTION
STP9547
P Channel Enhancement Mode MOSFET
-
6.8A
The STP9547 is the P-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular
phone and notebook computer power management and other batter powered
circuits where high-side switching.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
FEATURE
z -40V/-5.6A, R
@V
z -40V/-5.2A, R
z Super high density cell design for
extremely low R
z Exceptional on-resistance and maximum DC
current capability
z SOP-8 package design
= 55mΩ
DS(ON)
GS = -10V
= 80mΩ
DS(ON)
GS = -4.5V
@V
DS(ON)
ORDERING INFORMATION
Part Number Package Part Marking
STP9547S8RG SOP-8P STP9547
STP9547S8TG SOP-8P STP9547
※ Process Code : A ~ Z ; a ~ z
※ STP9547S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STP9547S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
1
Copyright © 2007, Stanson Corp.
STP9547 2007. Rev.1
ABSOULTE MAXIMUM RATINGS (Ta = 25
Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS ±20 V
STP9547
P Channel Enhancement Mode MOSFET
-
℃
unless otherwise noted )
Parameter Symbol Typical Unit
6.8A
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM -30 A
Continuous Source Current (Diode Conduction) IS -2.3 A
Power Dissipation
Operation Junction Temperature TJ 150
Storage Temperature Range TSTG -55/150
Thermal Resistance-Junction to Ambient RθJA 70
TA=25℃
TA=70℃
TA=25℃
TA=70℃
ID
PD
-6.8
-5.2
2.5
1.6
W
℃
℃
℃
A
/W
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2
Copyright © 2007, Stanson Corp.
STP9547 2007. Rev.1
STP9547
P Channel Enhancement Mode MOSFET
-
6.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
VGS=0V,ID=-250uA -40 V
V
GS(th)
DS=VGS
℃
,ID=-
250uA
unless otherwise noted )
-1.0 -3.0 V
Gate Leakage Current I
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source OnResistance
Forward
Transconductance
Diode Forward Voltage VSD I
VDS=0V,VGS=±20V
GSS
VDS=-24V,VGS=0V -1
I
DSS
V
=-24V,VGS=0V
DS
T
VDS=-5V,VGS=-4.5V -10 A
I
D(on)
V
=-10V,ID=-5.6A
GS
R
DS(on)
gfs V
=-4.5V,ID=-5.2A
V
GS
=-15V,ID=-5.6V 13 S
DS
=-2.3A,VGS=0V -0.8 -1.2 V
S
=85℃
J
-5
47
62
±100
60
80
nA
uA
mΩ
Dynamic
Total Gate Charge Qg 16 24
=-15V,VGS=-10V
V
Gate-Source Charge Qgs 2.3
Gate-Drain Charge Qgd
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
C
C
C
t
d(on)
tr
t
d(off)
tf
iss
oss
rss
DS
≡
I
-3.5A
D
4.5
680
DS ==-15V,VGS=0V
V
120
V
I
D
f=1MHz
=-15V,RL=15Ω
DD
=-1A,V
R
GEN
=6Ω
G
=-10V
75
14 25
16 26
43 70
30 52
nC
pF
nS
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9547 2007. Rev.1
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