Stanson STP9235 Schematic [ru]
STP9
STP9
STP9
STP92
2
2
235
3 5
35
35
PChannelEnhancementModeMOSFET
-
7.5A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
-25V/-7.5A,R
DS(ON)
=45mΩ
@VGS=-10V
-25V/-6.0A,R
DS(ON)
=55mΩ
@VGS=-6.0V
-25V/-5.4A,R
DS(ON)
=65mΩ
@VGS=-4.5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceandmaximumDC
currentcapability
SOP-8packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP9235istheP-Channellogicenhancementmodepowerfieldeffecttransistorsare
producedusinghighcelldensity,DMOStrenchtechnology.Thishighdensityprocess
isespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularly
suitedforlowvoltageapplication,notebookcomputerpowermanagementandother
batterypoweredcircuitswherehigh-sideswitching.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
�
PART
PART
PART
PARTMARKING
SOP-8
SOP-8
SOP-8
SOP-8
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
M ARKING
MARKING
MARKING
Copyright©2007,StansonCorp.
STP92352009.V1
STP9
STP9
STP9
STP92
2
2
235
3 5
35
35
PChannelEnhancementModeMOSFET
-
7.5A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
VDSS
-25
V
Gate-SourceVoltage
VGSS
±20
V
ContinuousDrainCurrent(TJ=150
℃
)
TA=25℃
TA=70
℃
ID
-8.0
-6.0
A
PulsedDrainCurrent
IDM
-30
A
ContinuousSourceCurrent(DiodeConduction)
IS
-2.3
A
PowerDissipation
TA=25℃
TA=70
℃
PD
2.8
1.6
W
OperationJunctionTemperature
TJ
-55/150
℃
StorgaeTemperatureRange
TSTG
-55/150
℃
ThermalResistance-JunctiontoAmbient
RθJA
70
℃
/W
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP92352009.V1
STP9
STP9
STP9
STP92
2
2
235
3 5
35
35
PChannelEnhancementModeMOSFET
-
7.5A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
BreakdownVoltage
V
(BR)DSS
V
GS
=0V,ID=-250uA
-25
V
GateThreshold
Voltage
V
GS(th)
V
DS
=V
GS
,ID=-250uA
-1.0
-3.0
V
GateLeakageCurrent
I
GSSVDS
=0V,V
GS
=±20V
±100
nA
ZeroGateVoltage
DrainCurrent
I
DSS
V
DS
=-18V,V
GS
=0V
-1
uA
V
DS
=-18V,V
GS
=0V
TJ=85℃
-5
On-StateDrain
Current
I
D(on)VDS
=-5V,V
GS
=-4.5V
-10
A
Drain-sourceOnResistance
R
DS(on)
V
GS
=-10V,ID=-7.5A
V
GS
=-6.0V,ID=-6.0A
V
GS
=-4.5V,ID=-5.4A
35
45
55
45
5565mΩ
Forward
Transconductance
gfs
V
DS
=-15V,ID=-5.7V
13
S
DiodeForwardVoltage
VSDIS=-2.3A,V
GS
=0V
-0.8
-1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
TotalGateCharge
Q
g
V
DS
=-15V,V
GS
=-10V
I
D
≡
-3.5A
16
24
nC
Gate-SourceCharge
Qgs2.3
Gate-DrainCharge
Q
gd
4.5
InputCapacitance
C
iss
VDS==-15V,VGS=0V
f=1MHz
680
pF
OutputCapacitance
C
oss
120
Reverse
TransferCapacitance
C
rss
75
Turn-OnTime
t
d(on)
tr
V
DD
=-15V,RL=15Ω
ID=-1A,V
GEN
=-10V
RG=6Ω
14
25
nS
15
26
Turn-OffTime
t
d(off)
tf
42
70
30
50
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP92352009.V1
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