Stanson STP6308 Schematic [ru]
ST
ST
ST
STP
P
P
P630
6 30
630
6308
8
8
8
DualPChannelEnhancementModeMOSFET
-1.0A
DESCRIPTION
Part
Part
Part
PartNumber
N umber
Number
Number
Package
Package
Package
Package
Part
Part
Part
PartMarking
M arking
Marking
Marking
STP6308
SOT-363/SC70-6L
YA
FEATURE
FEATURE
FEATURE
FEATURE
-20V/1.0A,R
DS(ON)
=520mΩ@VGS=4.5V
-20V/0.8A,R
DS(ON)
=700mΩ@VGS=2.5V
-20V/0.7A,R
DS(ON)
=950mΩ@VGS=1.8V
Superhighdensitycelldesignforextremely
lowR
DS(ON)
Exceptionallowon-resistanceandmaximum
DCcurrentcapability
SOT-363/SC70-6Lpackagedesign
08YW
D1G2S2
S1GD2
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP6308isthedualP-Channelenhancementmodepowerfieldeffecttransistorwhich
isproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensityprocess
isespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitching
performance.Thesedevicesareparticularlysuitedforlowvoltageapplicationssuchas
notebookcomputercircuitswherehigh-sideswitching,lowin-linepowerlossand
resistancetotransientsareneeded.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOT-363
SOT-363
SOT-363
SOT-363/
/
S C70-6L
/
SC70-6L
/SC70-6L
SC70-6L
�
�
�
�
�
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Y:
Y ear
Y:
Year
Y:
Y:Year
Year
A:
P rocess
A:
Process
A:
A:Process
ProcessCode
ORDERING
ORDERING
ORDERING
ORDERINGINFORMATION
※ProcessCode:A~Z(1~26);a~z(27~52)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
I NFORMATION
INFORMATION
INFORMATION
C ode
Code
Code
STP63082009.V1
ST
ST
ST
STP
P
P
P630
6 30
630
6308
8
8
8
DualPChannelEnhancementModeMOSFET
-1.0A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
V
DSS
-20
V
Gate-SourceVoltage
V
GSS
±20
V
ContinuousDrainCurrent(TJ=150℃)
TA=25℃
I
D
-1.0
A
TA=80℃
-0.7
PulsedDrainCurrent
IDM-3
A
ContinuousSourceCurrent(DiodeConduction)
IS-0.6
A
PowerDissipation
TA=25℃
P
D
0.35
W
TA=70℃
0.19
OperationJunctionTemperature
TJ-55/150
℃
StorageTemperatureRange
T
STG
-55/150
℃
ThermalResistance-Junctionto
Ambient
T
≦
10sec
R
θJA
360
℃/W
SteadyState
400
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25℃Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
STP63082009.V1
ST
ST
ST
STP
P
P
P630
6 30
630
6308
8
8
8
DualPChannelEnhancementModeMOSFET
-1.0A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
OFF
OFF
OFF
OFFCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
Drain-SourceBreakdown
Voltage
V
(BR)DSS
V
GS
=0V,ID=250uA
-20
V
GateThresholdVoltage
V
GS(th)
V
DS
=VGS,ID=250uA
-0.35
-0.8
V
GateLeakageCurrent
I
GSS
V
DS
=0V,V
GS
=+/-12V
±100
nA
ZeroGateVoltageDrain
Current
I
DSS
V
DS
=20V,V
GS
=0V
-1
uA
V
DS
=20V,V
GS
=0V
TJ=85℃
-5
On-StateDrainCurrent
I
D(on)VDS
≦5V,V
GS
=4.5V
-2
A
Drain-sourceOn-Resistance
R
DS(on)
V
GS
=4.5V,ID=1.0A
420
520
mΩ
V
GS
=2.5V,ID=0.8A
580
700
V
GS
=1.8V,ID=0.5A
750
950
ForwardTransconductance
g
fs
V
DS
=10V,ID=1.0A
1.5
S
DiodeForwardVoltage
V
SD
IS=0.5A,V
GS
=0V
-0.8
-1.2
V
D
D
D
DYNAMIC
Y NAMIC
YNAMIC
YNAMIC
TotalGateCharge
Q
g
V
DS
=-10V,V
GS
=-4.5V,
ID=0.88A
1.5
2.0
nC
Gate-SourceCharge
Qgs0.3
Gate-DrainCharge
Qgd0.2
InputCapacitance
C
iss
V
DS
=-10V,V
GS
=0V
f=1MHz
145
pF
OutputCapacitance
C
oss
25
ReverseTransferCapacitance
C
rss
10
Turn-OnTime
T
d(on)
VDD=10V,RL=20Ω,ID=-0.5A,
VGEN=-4.5V,RG=6Ω
18
30
nS
tr25
40
Turn-OffTime
T
d(off)
15
45
tf12
20
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25℃Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
STP63082009.V1
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