Stanson STP3467 Schematic [ru]

STP3467

STP3467

STP3467

STP3467

PChannelEnhancementModeMOSFET

-5.2A

DESCRIPTION

Part

Part

Part

PartNumber

N umber

Number

Number

Package

Package

Package

Package

Part

Part

Part

PartMarking

M arking

Marking

Marking

STP3467ST6RG

TSOP-6

67YW

FEATUR

FEATUR

FEATUR

FEATURE

E

E

E

◆-20V/-5.0A,RDS(ON)=90mohm@VGS=-4.5V

◆-20V/-3.5A,RDS(ON)=110mohm@VGS=-2.5V

◆-20V/-1.7A,RDS(ON)=140mohm@VGS=-1.8V

◆Superhighdensitycelldesignforextremelylow

RDS(ON)

◆Exceptionalan-resistanceandmaximumDC

currentcapability

◆TSOP-6Ppackagedesign

67YW

DSD

DDG

DESCRIPTION

DESCRIPTION

DESCRIPTION

TheSTP3467istheP-Channelenhancementmodepowerfieldeffecttransistorwhichis
producedusinghighcelldensity,DMOStrenchtechnology.Thishighdensityprocessis
especiallytailoredtominimizeon-stateresistance.Thesedevicesareparticularly
suitedforlowvoltageapplication,suchascellularphoneandnotebookcomputer
powermanagementandotherbatterypoweredcircuits,andlowin-linepowerlossare
neededinaverysmalloutlinesurfacemountpackage.

P IN

C ONFIGURATION

PIN

CONFIGURATION

PIN

PINCONFIGURATION

CONFIGURATION

TS

O P-

OP-

OP-6P

6 P

6P

6P

Y:

Y:

Y:

Y:Year
A:

A:

A:

A:Week

Y ear

Year

Year
W eek

Week

WeekCode

C ode

Code

Code

TS

TS

TSOP-

ORDERING

ORDERING

ORDERING

ORDERINGINFORMATION

STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com

※WeekCodeCode:A~Z;a~z
※STP3467ST6RGST6:TSOP-6;R:TapeReel;G:Pb–Free

I NFORMATION

INFORMATION

INFORMATION

STP34672008.V1

STP3467

STP3467

STP3467

STP3467

PChannelEnhancementModeMOSFET

-5.2A

ABSOULTE

Parameter

Parameter

Parameter

Parameter

Symbol

Symbol

Symbol

Symbol

Typical

Typical

Typical

Typical

Unit

Unit

Unit

Unit

Drain-SourceVoltage

V

DSS

-20

V

Gate-SourceVoltage

V

GSS

±12

V

ContinuousDrainCurrent(TJ=150℃)

TA=25℃

TA=70℃

I

D

-5.2

-4.2

A

PulsedDrainCurrent

I

DM

-20

A

ContinuousSourceCurrent(DiodeConduction)

I

S

-1.7

A

PowerDissipation

TA=25℃

P

D

2.0

W

TA=70℃

1.3

OperationJunctionTemperature

T

J

-55/150

℃

StorageTemperatureRange

T

STG

-55/150

℃

ThermalResistance-JunctiontoAmbient

R

θJA

90

℃/W

ABSOULTE

ABSOULTE

ABSOULTEMAXIMUM

M AXIMUM

MAXIMUM

MAXIMUMRATINGS

R ATINGS

RATINGS

RATINGS(Ta=25℃unlessotherwisenoted)

STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com

STP34672008.V1

STP3467

STP3467

STP3467

STP3467

PChannelEnhancementModeMOSFET

-5.2A

ELECTRICAL

Parameter

Parameter

Parameter

Parameter

Symbol

Symbol

Symbol

Symbol

Condition

Condition

Condition

Condition

Min

Min

Min

Min

Typ

Typ

Typ

Typ

Max

Max

Max

Max

Unit

Unit

Unit

Unit

Static

Static

Static

Static

Drain-SourceBreakdown
Voltage

V

(BR)DSS

V

GS

=0V,ID=-250uA

-20

V

GateThresholdVoltage

V

GS(th)

V

DS

=VGS,ID=-250uA

-0.35

-0.8

V

GateLeakageCurrent

I

GSS

V

DS

=0V,V

GS

=

±12

V

±

100

nA

ZeroGateVoltageDrain
Current

I

DSS

V

DS

=-20V,V

GS

=0V

-1

uA

V

DS

=-20V,V

GS

=0V

TJ=55℃

-5

On-StateDrainCurrent

I

D(on)VDS

≦-5V,V

GS

=-10V

-6

A

Drain-sourceOn-Resistance

R

DS(on)

V

GS

=-10V,ID=-5.2A

0.075

0.090

Ω

V

GS

=-4.5V,ID=-4.2A

0.090

0.110

V

GS

=-1.8V,ID=-1.7A

0.120

0.140

ForwardTransconductance

g

fs

V

DS

=-5.0V,ID=-2.8A

-10

S

DiodeForwardVoltage

V

SD

IS=-1.5A,V

GS

=0V

-0.8

-1.2

V

Dynamic

Dynamic

Dynamic

Dynamic

TotalGateCharge

Qg4.8

8

nC

Gate-SourceCharge

Qgs1.0

Gate-DrainCharge

Qgd1.0

InputCapacitance

Ciss

V

DS

=-6V,V

GS

=0,

f=1MHz

485

pF

OutputCapacitance

Coss

85

ReverseTransfer
Capacitance

Crss

40

Turn-OnTime
T

d(on)

V

DD

=-6V,

RL=6Ω,V

GEN

=-4.5V

RG=6Ω

10

15

ns

tr15

25

Turn-OffTime
T

d(off)

18

25

tf15

20

V

DS

=-6V,V

GS

=-4.5V,

V

DS

=-2.8A

ELECTRICAL

ELECTRICAL

ELECTRICALCHARACTERISTICS

C HARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS(Ta=25℃Unlessotherwisenoted)

STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com

STP34672008.V1