Stanson STN8882D Schematic [ru]
STN
STN
STN
STN8882D
8 882D
8882D
8882D
NChannelEnhancementModeMOSFET
60.0A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
30V/35A,R
DS(ON)
=5mΩ
@VGS=10V
30V/35A,R
DS(ON)
=7mΩ
@VGS=4.5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceand
maximumDCcurrentcapability
TO-252,TO-251packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN8882DistheN-Channellogicenhancementmodepowerfieldeffecttransistor
whichisproducedusinghighcelldensity,DMOStrenchtechnology.TheSTN8882D
hasbeendesignedspeciallytoimprovetheoverallefficiencyofDC/DCconverters
usingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeen
optimizedforlowgatecharge,lowR
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION(D-PAK)
( D-PAK)
(D-PAK)
(D-PAK)
DS(ON)
andfastswitchingspeed.
TO-252
TO-252
TO-252
TO-252TO-251
PART
PART
PART
PARTMARKING
M ARKING
MARKING
MARKING
T O-251
TO-251
TO-251
�
�
�
�
�
�
Y:
Y ear
Year
YearCode
C ode
Code
CodeA:
Y:
Y:
Y:Year
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
A :
P rocess
A:
Process
A:Process
ProcessCode
C ode
Code
Code
Copyright©2009,StansonCorp.
STN8882D2009.V1
STN
STN
STN
STN8882D
8 882D
8882D
8882D
NChannelEnhancementModeMOSFET
60.0A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
VDSS30V
Gate-SourceVoltage
VGSS
±20
V
ContinuousDrainCurrent(TJ=150
℃
)
TA=25℃
TA=70
℃
ID
60
40
A
PulsedDrainCurrent
IDM
100
A
ContinuousSourceCurrent(DiodeConduction)
IS50A
PowerDissipation
TA=25℃
TA=70
℃
PD
40
55
W
OperationJunctionTemperature
TJ
150
℃
StorgaeTemperatureRange
TSTG
-55/150
℃
ThermalResistance-JunctiontoAmbient
RθJA
100
℃
/W
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN8882D2009.V1
STN
STN
STN
STN8882D
8 882D
8882D
8882D
NChannelEnhancementModeMOSFET
60.0A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
BreakdownVoltage
V
(BR)DSS
V
GS
=0V,ID=250mA
30
V
GateThreshold
Voltage
V
GS(th)
V
DS
=V
GS
,ID=250uA
1.0
3.0
V
GateLeakageCurrent
I
GSSVDS
=0V,V
GS
=±20V
±100
nA
ZeroGateVoltage
DrainCurrent
I
DSS
V
DS
=30V,V
GS
=0V
1
uA
V
DS
=30V,V
GS
=0V
TJ=120℃
5
On-StateDrain
Current
I
D(on)
V
DS
≧
5V,V
GS
=10V
100
A
Drain-sourceOnResistance
R
DS(on)
V
GS
=10V,ID=35A
V
GS
=4.5V,ID=35A
5
7
mΩ
Forward
Transconductance
gfs
V
DS
=5V,ID=12A
110
S
DiodeForwardVoltage
VSDIS=1.0A,V
GS
=0V
1.5
V
Dynamic
Dynamic
Dynamic
Dynamic
TotalGateCharge
Q
g
V
DS
=15V,V
GS
=4.5V
I
D
≡
20A
41.3
54
nC
Gate-SourceCharge
Qgs18
23
Gate-DrainCharge
Q
gd
13
17
InputCapacitance
C
iss
VDS=15V,VGS=0V
F=1MHz
4826
pF
OutputCapacitance
C
oss
683.3
Reverse
TransferCapacitance
C
rss
374.9
Turn-OnTime
t
d(on)
tr
V
DD
=15V,RL=15Ω
ID=1.0A,V
GEN
=10V
RG=6Ω
23.6
47
nS
12
24
Turn-OffTime
t
d(off)
tf
114
227
97.2
195
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN8882D2009.V1
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