Stanson STN8205D Schematic [ru]
STN8205D
Dual N Channel Enhancement Mode MOSFET
5.0A
DESCRIPTION
STN8205D is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSOP-6
G1 D G2
STN8205
SYA
FEATURE
z 20V/4.0A, R
z 20V/3.4A, R
z Super high density cell design for extremely
low R
DS(ON)
z Exceptional low on-resistance and maximum
DC current capability
z TSOP-6 package design
= 30m-ohm@VGS =4.5V
DS(ON)
=42m-ohm@VGS =2.5V
DS(ON)
S1 D S2
S：Subcontractor
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number Package Part Marking
STN8205DST6RG TSOP-6 SYA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST8205DST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1
STN8205D
Dual N Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )℃
Parameter Symbol
Typical Unit
5.0A
Drain-Source Voltage V
Gate-Source Voltage V
T
A=25℃
=150 )℃
(T
J
=70℃
T
A
20 V
DSS
+/-20 V
GSS
I
D
5.0 Continuous Drain Current
A
3.4
Pulsed Drain Current IDM 20 A
Continuous Source Current (Diode Conduction) IS 2 A
TA=25℃
=70℃
T
A
P
D
1.15 Power Dissipation
W
0.75
Operation Junction Temperature TJ 150 ℃
Storage Temperature Range T
Thermal Resistance-Junction to Ambient
-55/150 ℃
STG
R
100 /W℃
θJA
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1
STN8205D
nA
Dual N Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )℃
Parameter Symbol
Condition Min Typ Max Unit
Static
5.0A
Drain-Source Breakdown
V
(BR)DSS
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
Zero Gate Voltage Drain
GS(th)
GSS
I
DSS
Current
On-State Drain Current I
D(on)
Drain-source On-Resistance R
DS(on)
Forward Transconductance gfs
Diode Forward Voltage VSD
VGS=0V,ID=250uA
=VGS,ID=250uA
V
DS
=0V,VGS=+/-20V
V
DS
VDS=20V,VGS=0V
V
V
=20V,VGS=0V
DS
T
J
≦5V,VGS=4.5V 5 A
DS
VGS=4.5V,ID=4.0A
V
=2.5V,ID=3.4A
GS
=5V,ID=3.6A
V
DS
=1.6A,VGS=0V
I
S
=85℃
20 V
0.6 1.2 V
±100
1
5
0.025 0.030
0.037 0.042
uA
Ω
13 S
0.8 1.2 V
Dynamic
Total Gate Charge Qg 10.5
Gate-Source Charge Qgs 2.0
=10V,VGS=4.5V,VDS=2.8A
V
DS
Gate-Drain Charge Qgd
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
805
iss
155
oss
rss
V
=8V,VGS=0V
DS
f=1MHz
2.5
122
nC
pF
T
18 Turn-On Time
d(on)
V
5
t
r
T
d(off)
t
f
DD=10V, RL=10Ω, ID=4.0A,
GEN=4.5V, RG=6Ω
45 Turn-Off Time
V
22
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1
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