Stanson STN6303 Schematic [ru]

STN6303

53YW

Dual N Channel Enhancement Mode MOSFET

1.0A

DESCRIPTION

STN6303 is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer circuits where high-side switching, low in-line power loss and
resistance to transients are needed.

PIN CONFIGURATION
SOT-363 / SC70-6L

D1 G2 S2

FEATURE

 23V/0.5A, R
 23V/0.75A, R
 Super high density cell design for extremely

low R

 Exceptional low on-resistance and maximum

 SOT-363 / SC70-6L package design

DS(ON)

DC current capability

= 400m-ohm@VGS =4.5V

DS(ON)

=550m-ohm@VGS =2.5V

DS(ON)

S1 G D2

Y: Year
W: Process Code

ORDERING INFORMATION

Part Number Package Part Marking

STN6303 SOT-363 / SC70-6L 53

※ Process Code : A ~ Z(1~26) ; a ~ z(27~52)

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com

STN6303 2008. V1

STN6303

Dual N Channel Enhancement Mode MOSFET

ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )℃

Parameter Symbol

Typical Unit

1.0A

Drain-Source Voltage V

Gate-Source Voltage V

TA=25℃

(TJ=150 )℃

Pulsed Drain Current IDM 2.5 A

Continuous Source Current (Diode Conduction) IS 0.6 A

Operation Junction Temperature TJ -55/150 ℃

Storage Temperature Range T

Ambient

TA=70℃

TA=25℃

TA=70℃

T≦10sec

Steady State

23 V

DSS

+/-20

GSS

ID

PD

-55/150 ℃

STG

R

θJA

1.0 Continuous Drain Current

0.6

0.35 Power Dissipation

0.19

360 Thermal Resistance-Junction to

400

V

A

W

/W℃

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com

STN6303 2008. V1

STN6303

Dual N Channel Enhancement Mode MOSFET

1.0A

ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )℃

Parameter Symbol

OFF CHARACTERISTICS

Drain-Source Breakdown

V

(BR)DSS

Voltage
Gate Threshold Voltage V

Gate Leakage Current I

GS(th)

GSS

Zero Gate Voltage Drain

I

DSS

Current

On-State Drain Current I

V

D(on)

Drain-source On-Resistance R

DS(on)

Forward Transconductance gfs

Diode Forward Voltage VSD

DYNAMIC
Total Gate Charge Qg 1.2 1.5

Gate-Source Charge Qgs 0.2

VDS=10V,VGS=4.5V,VDS=0.7A

Gate-Drain Charge Qgd

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

110

iss

34

oss

rss

T

5 10 Turn-On Time

d(on)

tr 8 15

T

d(off)

VDD=10V, RL=10Ω, ID=1.0A,

10 18 Turn-Off Time

tf

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com

Condition Min Typ Max Unit

VGS=0V,ID=250uA

VDS=VGS,ID=250uA

23 V

0.35 1.0 V

VDS=0V,VGS=+/-12V

VDS=20V,VGS=0V

VDS=20V,VGS=0V

5

TJ=85℃

5V,VGS=4.5V 2.5 A

≦

DS

VGS=4.5V,ID=0.5A

VGS=2.7V,ID=0.2A

VDS=10V,ID=1.2A

IS=0.5A,VGS=0V

385 400

530 550

2.6 S

0.8 1.2 V

0.3

VDS=10V,VGS=0V

f=1MHz

16

VGEN=4.5V, RG=6Ω

1.2 2.8

±100 nA

1

uA

mΩ

nC

pF

nS

STN6303 2008. V1