Stanson STN4972 Schematic [ru]
STN4972
STN4972
STN4972
STN4972
DualNChannelEnhancementModeMOSFET
8.5A
DESCRIPTION
Part
Part
Part
PartNumber
N umber
Number
Number
Package
Package
Package
Package
Part
Part
Part
PartMarking
M arking
Marking
Marking
STN4972S8RG
SOP-8
STN4972
STN4972S8TG
SOP-8
STN4972
FEATURE
FEATURE
FEATURE
FEATURE
30V/8.5A,R
DS(ON)
=12mΩ(Typ.)
@VGS=10V
30V/7.8A,R
DS(ON)
=15mΩ
@VGS=4.5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceandmaximum
DCcurrentcapability
SOP-8packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN4972istheDualN-Channellogicenhancementmodepowerfieldeffecttransistors
whichareproducedusinghighcelldensityDMOStrenchtechnology.Itissuitablefor
thepowermanagementapplicationsintheportableorbatterypoweredsystem.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
PART
PART
PART
PARTMARKING
SOP-8
SOP-8
SOP-8
SOP-8
ORDERING
ORDERING
ORDERING
ORDERINGINFORMATION
M ARKING
MARKING
MARKING
I NFORMATION
INFORMATION
※ProcessCode:A~Z;a~z
※STN4972S8RGS8:SOP-8;R:TapeReel;G:Pb–Free
※STN4972S8TGS8:SOP-8;T:Tube;G:Pb–Free
INFORMATION
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49722008.V1
STN4972
STN4972
STN4972
STN4972
DualNChannelEnhancementModeMOSFET
8.5A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
V
DSS
30
V
Gate-SourceVoltage
V
GSS
±
20
V
ContinuousDrainCurrent
(TJ=150
℃
)
TA=25℃
TA=70
℃
I
D
8.5
7.5
A
PulsedDrainCurrent
I
DM
25
A
ContinuousSourceCurrent
(DiodeConduction)
I
S
2.3
A
PowerDissipation
TA=25℃
TA=70
℃
P
D
2.5
1.6
W
OperationJunctionTemperature
TJ-55/150
℃
StorgaeTemperatureRange
T
STG
-55/150
℃
ThermalResistance-JunctiontoAmbient
Rθ
JA
80
℃
/W
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49722008.V1
STN4972
STN4972
STN4972
STN4972
DualNChannelEnhancementModeMOSFET
8.5A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-SourceBreakdown
Voltage
V
(BR)DSSVGS
=0V,ID=250uA
30
V
GateThresholdVoltage
V
GS(th)VDS
=V
GS,ID
=250uA
1.0
3.0
V
GateLeakageCurrent
I
GSS
V
DS
=0V,V
GS
=
±
20V
±
100
nA
ZeroGateVoltageDrain
Current
I
DSS
TJ=55
℃
V
DS
=24V
GS
=0V
1
uA
V
DS
=24V
GS
=0V
5
On-StateDrainCurrent
I
D(on)VDS
≥
5V,V
GS
=10
250A
Drain-sourceOn-Resistance
R
DS(on)
V
GS
=
10V,ID=8.5A
V
GS
=4
.5V,ID=7.8A
0.012
0.015
Ω
ForwardTranConductance
g
fs
V
DS
=15.0V,ID=6.2A
13
S
DiodeForwardVoltage
VSDIS=2.3A,V
GS
=0V
0.8
1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
TotalGateCharge
Q
g
V
DS
=15V,V
GS
=10V
ID=2A
16
nC
Gate-SourceCharge
Qgs4.2
Gate-DrainCharge
Q
gd
2.5
InputCapacitance
Ciss
VDS=15.0V,VGS=0V
f=1MHz
1350
pF
OutputCapacitance
Coss
258
ReverseTransferCapacitance
Crss
150
Turn-OnTime
t
d(on)
tr
V
DD
=15V,RL=15
Ω
ID=5A,V
GEN
=10V
RG=1
Ω
15
20
nS
6
16
Turn-OffTime
t
d(off)
tf
20
40
12
20
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49722008.V1
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