Stanson STN4346 Schematic [ru]
STN4
STN4
STN4
STN4 346
346
346
346
N Channel Enhancement Mode MOSFET
6.8 A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
3 0V/ 6.8 A, R
DS(ON)
= 26 m Ω (Typ.)
@V GS = 10V
30V/ 6.0 A, R
DS(ON)
= 34 m Ω
@V GS = 4.5 V
30V/ 5.6 A, R
DS(ON)
= 40 m Ω
@V GS = 2 .5 V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
STN4346
STN4346
STN4346
STN4346
Y
Y
Y
Y A
A
A
A
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN4 39 2 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery power ed circuits where high-side switching.
PIN
CONFIGURATION
PIN
CONFIGURATION
PIN
PIN CONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
�
PART
PART
PART
PART MARKING
SOP-8
SOP-8
SOP-8
SOP-8
MARKING
MARKING
MARKING
Y
Year
Y
Year
：
Y
Y
Year
Year Code
A
Process
A
Process
A
A ： Process
Process Code
Code
Code
Code
Code
Code
Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4 346 20 10 . V1
STN4
STN4
STN4
STN4 346
346
346
346
N Channel Enhancement Mode MOSFET
6.8 A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-Source Voltage
VDSS
3 0
V
Gate-Source Voltage
VGSS
± 12
V
Continuous Drain Current (TJ=150
℃
)
TA=25 ℃
TA=70
℃
ID
6.8
5.6
A
Pulsed Drain Current
IDM
3 0
A
Continuous Source Current (Diode Conduction)
IS
2.3
A
Power Dissipation
TA=25 ℃
TA=70
℃
PD
2. 5
1.6
W
Operation Junction Temperature
TJ
-55/ 150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
R θ JA
8 0
℃
/W
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4 346 20 10 . V1
STN4
STN4
STN4
STN4 346
346
346
346
N Channel Enhancement Mode MOSFET
6.8 A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
V
(BR)DSSVGS
=0V,ID=250uA
30
V
Gate Threshold
Voltage
V
GS(th)
V
DS
=V
GS
,ID= 2 50uA
1.0
3.0
V
Gate Leakage Current
I
GSSVDS
=0V,V
GS
= ± 12 V
± 100
nA
Zero Gate Voltage
Drain Current
I
DSS
V
DS
= 24 V,V
GS
=0V
1
uA
V
DS
= 24 V,V
GS
=0V
TJ= 8 5 ℃
100
On-State Drain
Current
ID(on)
V
DS
≥ 5V,V
GS
=10V
25
A
Drain-source OnResistance
R
DS(on)
V
GS
=10V,ID= 6.8 A
V
GS
= 4.5 V,ID= 6.0 A
V
GS
= 2.5 V,ID= 5.6 A
18
24
36
26
3440m Ω
Forward
Transconductance
gfs
V
DS
=15V,ID= 6.2 A
13
S
Diode Forward Voltage
VSDIS= 2.3 A,V
GS
=0V
0.8
1. 2VDynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Q
g
V
DS
=15V,V
GS
=10V
ID≡ 2 A
1 6
2 4
nC
Gate-Source Charge
Qgs3
Gate-Drain Charge
Q
gd
2.5
Turn-On Time
t
d(on)
tr
V
DD
=15V,RL=15 Ω
ID= 1.0 A,V
G S
=10V
RG= 6 Ω
15
20
nS
6
1 2
Turn-Off Time
t
d(off)
tf
10
20
40
80
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4 346 20 10 . V1
Loading...