Stanson STN1012 Schematic [ru]
STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
20 V/ 0 . 65 A, R
DS(ON)
= 380 ohm@V GS = 4.5 V
20 V/ 0. 5 5 A, R
DS(ON)
= 450 ohm@V GS = 2.5 V
20V/0.45A, R
DS(ON)
=800ohm@ V GS = 1.8 V
Super high density cell design for extremely
low R
DS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT- 523 / SC 89 package design
DESCRIPTION
DESCRIPTION
DESCRIPTION
ST N1012 is the N -Channel enhancement mode power field effect transistor s are
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance . These devices are particularly suited for low voltage applications such as
notebook computer power management and other bettery powered circuits where
high-side switching , low in-line power loss , and resistance to transients are needed .
PIN
CONFIGURATION
PIN
CONFIGURATION
PIN
PIN CONFIGURATION
CONFIGURATION
SOT-
523
/
SC-
SOT-
SOT-
SOT- 523
523
523 /
/
SC-
/ SC-
SC- 89
89
89
89
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�
�
�
�
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PART
PART
PART
PART MARKING
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
MARKING
MARKING
MARKING
STN 1012 200 9 . V1
STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
+/- 12
V
Continuous Drain Current (TJ=150 ℃ )
T A =25 ℃
I
D
0.65
A
TA= 8 0 ℃
0. 45
Pulsed Drain Current
IDM1.0
A
Continuous Source Current (Diode Conduction)
IS0. 3
A
Power Dissipation
T A =25 ℃
P
D
0. 27
W
TA=70 ℃
0.16
Operation Junction Temperature
TJ-55/ 150
℃
Storage Temperature Range
T
STG
-55/150
℃
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25 ℃ Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN 1012 200 9 . V1
STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
OFF
OFF
OFF
OFF CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
Drain-Source Breakdown
Voltage
V
(BR)DSS
V
GS
=0V,ID=250uA
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
=VGS,ID=250uA
0. 35
1. 0
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=+/- 12 V
100
nA
Zero Gate Voltage Drain
Current
I
DSS
V
DS
=2 0 V,V
GS
=0V
1
uA
V
DS
=2 0 V,V
GS
=0V
TJ= 5 5 ℃
5
On-State Drain Current
I
D(on)VDS
≦ 4.5 V,V
GS
= 5 V
0.7
A
Drain-source On-Resistance
R
DS(on)
V
GS
= 4.5 V,ID= 0. 65 A
260
380
m Ω
V
GS
= 2.5 V,ID= 0. 55 A
320
450
V
GS
= 1 .8 V,ID= 0. 55 A
420
800
Forward Tran s conductance
g
fs
V
DS
= 10 V,ID= 0.4 A
1.0
S
Diode Forward Voltage
V
SD
IS= 0. 1 5 A,V
GS
=0V
0.8
1.2
V
D
D
D
D YNAMIC
YNAMIC
YNAMIC
YNAMIC
Total Gate Charge
Q
g
V
DS
= 10 V,V
GS
= 4.5 V, V
D S
= 0. 6 A
1 .2
1.5
nC
Gate-Source Charge
Qgs0.2
Gate-Drain Charge
Qgd0.3
Turn-On Time
T
d(on)
V DD =1 0 V, RL=1 0 Ω , I D = 0.5 A,
V GEN = 4.5 V , RG=6 Ω
5
10nStr8
15
Turn-Off Time
T
d(off)
10
18
tf1.2
2.8
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN 1012 200 9 . V1
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