Stanson ST7400 Schematic [ru]

2

2

DESCRIPTION

ST7400 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.

ST7400

N Channel Enhancement Mode MOSFET

2.8A

PIN CONFIGURATION
SOT-323 (SC-70)

3

D

G S

1

1.Gate 2.Source 3.Drain

PART MARKING
SOT-323

FEATURE

 30V/2.8A, R

 30V/2.5A, R

 30V/1.5A, R

 Super high density cell design for

Extremely low R

 Exceptional on-resistance and

maximum DC current capability

 SOT-323 (SC-70) package design

= 77mΩ

DS(ON)

@VGS =10V

= 85mΩ

DS(ON)

@VGS = 4.5V

= 170mΩ

DS(ON)

@VGS = 2.5V

DS(ON)

3

00YW

1

Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com

ST7400 2005. V1

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

ST7400

N Channel Enhancement Mode MOSFET

Parameter Symbol Typical Unit

2.8A

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain CurrentTJ=150℃)

Pulsed Drain Current IDM 10 A

Continuous Source Current (Diode Conduction) IS 1.25 A

Power Dissipation

Operation Junction Temperature TJ 150

Storage Temperature Range T

Thermal Resistance-Junction to Ambient

TA=25℃
TA=70℃

TA=25℃
TA=70℃

30 V

DSS

±

GSS

ID

PD

-55/150

STG

θ

R

JA

12

2.8

2.3

0.33

0.21

100

W

℃

℃

℃

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com

V

A

/W

ST7400 2005. V1

ST7400

N Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

2.8A

Parameter Symbol

Condition Min Typ Max Unit

Static

Drain-Source Breakdown
Voltage

Gate Threshold Voltage V

Gate Leakage Current I

V

(BR)DSS

GS(th)

GSS

VGS=0V,ID=250uA 30

VDS=VGS,ID=250uA 0.8

VDS=0V,VGS=±12V

V

1.6

±

100

V

nA

VDS=24V,VGS=0V 1

Zero Gate Voltage Drain
Current

On-State Drain Current I

Drain-source On-Resistance R

I

DSS

D(on)

DS(on)

VDS=24V,VGS=0V

≦

V

DS

-5V,VGS=-4.5V

VGS=10V,ID=2.8A
VGS=4.5V,ID=2.3A
VGS=2.5V,ID=1.5A

TJ=85℃

4.0

62
70
95

5

77
85

110

uA

A

mΩ

Forward Transconductance gfs VDS=5V,ID=4.0V 4 S

Diode Forward Voltage VSD IS=1.0A,VGS=0V 0.8 1.2

V

Dynamic

Total Gate Charge Qg 4.2

Gate-Source Charge Qgs 0.6

Gate-Drain Charge Qgd

Input Capacitance C
Output Capacitance C
Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

380

iss

55

oss

C

rss

t

d(on)

tr

t

d(off)

tf

VDS=15V

VGS=4.5V

ID-2.0A

VDS=15V

VGS=0V

F=1MHz

VDS=15V

ID=1A

RL=15Ω

RG=3Ω

V

=10V

GEN

1.5

40

2.5

2.5

20

5

nC

pF

nS

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com

ST7400 2005. V1