Stanson ST2305A Schematic [ru]

2

3

2

DESCRIPTION

ST2305A

P Channel Enhancement Mode MOSFET

-3.5A

ST2305A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.

PIN CONFIGURATION
SOT-23-3L

3

D

G

1

1.Gate 2.Source 3.Drain

PART MARKING
SOT-23-3L

S

FEATURE

 -20V/-3.5A, R

@VGS = -4.5V

 -20V/-3.0A, R

@VGS = -2.5V

 -20V/-2.0A, RDS(ON)=80m-ohm

@VGS=-1.8V

 Super high density cell design for

extremely low R

 Exceptional on-resistance and maximum

DC current capability

 SOT-23-3L package design

= 45m-ohm (Typ.)

DS(ON)

= 55m-ohm

DS(ON)

DS(ON)

05YA

1

Y: Year Code A: Process Code

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

ST2305A 2005. V1

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

ST2305A

P Channel Enhancement Mode MOSFET

Parameter Symbol Typical Unit

-3.5A

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain CurrentTJ=150℃)

Pulsed Drain Current IDM -10 A

Continuous Source Current (Diode Conduction) IS -1.6 A

Power Dissipation

Operation Junction Temperature TJ 150

Storgae Temperature Range T

Thermal Resistance-Junction to Ambient

TA=25℃
TA=70℃

TA=25℃
TA=70℃

-20 V

DSS

±

GSS

ID

PD

-55/150

STG

θ

R

JA

12

-3.5

-2.8

1.25

0.8

120

W

℃

℃

℃

V

A

/W

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

ST2305A 2005. V1

nA

ST2305A

P Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

-3.5A

Parameter Symbol

Condition Min Typ Max Unit

Static

Drain-Source Breakdown
Voltage

Gate Threshold Voltage V

Gate Leakage Current I

V

(BR)DSS

GS(th)

GSS

VGS=0V,ID=-250uA -20

VDS=VGS,ID=-250uA -0.3

VDS=0V,VGS=±12V

V

-1.0 V

±

100

VDS=-20V,VGS=0V -1

Zero Gate Voltage Drain
Current

Drain-source On-Resistance R

I

DSS

DS(on)

VDS=-20V,VGS=0V

TJ=55℃

VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-2.0A

0.045

0.055

0.080

-10

uA

Ω

Forward Transconductance gfs VDS=-5V,ID=-3.5V 8.5 S

Diode Forward Voltage VSD IS=-1.6A,VGS=0V -0.8 -1.2 V

Dynamic

Total Gate Charge Qg

Gate-Source Charge Qgs 2

Gate-Drain Charge Qgd 2

Input Capacitance C
Output Capacitance C
Reverse Transfer

Capacitance

Turn-On Time

iss

90

oss

C

40

rss

t

d(on)

tr

VDS=-10V

VGS=-4.5V

≡

I

-3.5A

D

VDS=-10V

VGS=0V

F=1MHz

VDD=-10V

RL=6Ω

ID=-1.0A

V

=-4.5V

Turn-Off Time

t

d(off)

tf

GEN

RG=6Ω

10 12

485

10 18

13 22

18 24

15 20

nC

pF

nS

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

ST2305A 2005. V1