Stanson ST1413A Schematic [ru]

DESCRIPTION

ST1413A

P Channel Enhancement Mode MOSFET

-3.4A

ST1413A is the P-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone and notebook computer power management,
other battery powered circuits, and low in-line power loss are required. The product is in a
very small outline surface mount package.

PIN CONFIGURATION
SOT-353 ( SC-70-5L )

FEATURE

 -20V/-3.4A, R

 -20V/-2.0A, R

 Super high density cell design for

extremely low R

 Exceptional on-resistance and maximum

DC current capability

 SOT-353 package design

= 130mΩ

DS(ON)

@VGS = -4.5V

= 150mΩ

DS(ON)

@VGS = -2.5V

DS(ON)

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

ST1413A 2005. V1

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

ST1413A

P Channel Enhancement Mode MOSFET

Parameter Symbol Typical Unit

-3.4A

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (TJ=150℃)

Pulsed Drain Current IDM -7 A

Continuous Source Current (Diode Conduction) IS -1.6 A

Power Dissipation

Operation Junction Temperature TJ 150

Storage Temperature Range T

Thermal Resistance-Junction to Ambient

TA=25℃
TA=70℃

TA=25℃
TA=70℃

-20 V

DSS

±

GSS

ID

PD

-55/150

STG

θ

R

JA

12

-3.4

-2.0

1.25

0.8

105

W

℃

℃

℃

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

V

A

/W

ST1413A 2005. V1

nA

ST1413A

P Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

-3.4A

Parameter Symbol

Condition Min Typ Max Unit

Static

Drain-Source Breakdown
Voltage

Gate Threshold Voltage V

Gate Leakage Current I

V

(BR)DSS

GS(th)

GSS

VGS=0V,ID=-250uA -20

VDS=VGS,ID=-250uA

VDS=0V,VGS=±12V

-0.4

V

-1.0 V

±

100

VDS=-20V,VGS=0V -1

Zero Gate Voltage Drain
Current

On-State Drain Current I

Drain-source On-Resistance R

I

DSS

D(on)

DS(on)

VDS=-20V,VGS=0V

TJ=55℃

≦

V

-5V,VGS=-4.5V

DS

≦

V

-5V,VGS=-2.5V

DS

VGS=-4.5V,ID=-3.4A
VGS=-2.5V,ID=-2.4A

-6

-3

0.100

0.130

-5

0.130

0.150

uA

A

Ω

Forward Transconductance gfs VDS=-1.8V,ID=-2.8V 6.5 S

Diode Forward Voltage VSD IS=-1.6A,VGS=0V -0.8 -1.2 V

Dynamic

Total Gate Charge Qg 4.8 8

Gate-Source Charge Qgs 1.0

Gate-Drain Charge Qgd

Input Capacitance C
Output Capacitance C
Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

485

iss

85

oss

C

rss

t

d(on)

tr

t

d(off)

tf

VDS=-6V

VGS=-4.5V

≡

I

-2.8A

D

VDS=-6V

VGS=0V

F=1MHz

VDD=-6V

RL=6Ω
ID=-1A

V

=-4.5V

GEN

RG=6Ω

1.0

87

11 17

13 20

18 25

15 20

nC

pF

nS

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

ST1413A 2005. V1