Stanson 2N7002 Schematic [ru]

3

1 2

G

S

3

1 2

PIN CONFIGURATION
SOT-23

2N7002

D

1.Gate 2.Source 3.Drain

PART MARKING
SOT-23

N Channel Enhancement Mode MOSFET

FEATURE

 60V/0.30A, R
 60V/0.25A, R
 Super high density cell design for extremely

low R

 Exceptional on-resistance and Maximum DC

current capability

 SOT-23 package design

DS(ON)

= 5Ω @VGS = 10V(Typ.)

DS(ON)

= 7Ω@VGS = 4.5V

DS(ON)

300mA

S72YW

Y : Year Code W : Process Code

120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

1

2N7002 2008. V1

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

2N7002

N Channel Enhancement Mode MOSFET

300mA

Parameter Symbol Typical Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain CurrentTJ=150℃) TA=25℃

Pulsed Drain Current IDM 1.0 A

Power Dissipation

Operation Junction Temperature TJ 150

Storgae Temperature Range T

Thermal Resistance-Junction to Ambient

TA=25℃

60 V

DSS

±

GSS

ID 0.3

PD 0.35 W

-55/150

STG

θ

R

JA

20

375

℃

℃

℃

V

A

/W

120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

2

2N7002 2008. V1

nA

2N7002

N Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

300mA

Parameter Symbol

Static

Drain-Source Breakdown
Voltage

V

Gate Threshold Voltage V

Gate Leakage Current I

Zero Gate Voltage Drain
Current

On-State Drain Current
On-State Drain Current
(plsed)

Is

Is

Drain-source On-Resistance R

Forward Transconductance G

Diode Forward Voltage V

Condition Min Typ Max Unit

(BR)DSS

GS(th)

GSS

VGS=0V,ID= 250uA 60

VDS=VGS,ID= 250uA

VDS=0V,VGS=±12V

0.8

V

VDS= 45V,VGS=0V 1

I

DSS

VDS= 45V,VGS=0V

TJ=125℃

D(on)

DM( 2 )

DS(on)

VGS=4.5V,ID= 0.25A

VGS=10.0V,ID=0.50A

VDS=10V,ID= 0.5A 0.6

fs(1)

IS=0.12A,VGS=0V 0.85 1.5 V

SD(1)

2.50

3.30

2.5 V

±

100

10

0.35

1.4

6.0

7.0

uA

A

Ω

S

Dynamic

Total Gate Charge Qg 1.4 2.0

Gate-Source Charge Qgs 0.8

Gate-Drain Charge Qgd

Input Capacitance Ciss 43

Output Capacitance Coss 20

Reverse Transfer Capacitance Crss

t

Turn-On Time

Turn-Off Time

d(on)

tr

t

d(off)

tf

VDS=30V, VGS=4.5V

I

VDS=25V, f=1MHz,

VDD=30V

ID=0.5A

V

RG=4.7Ω

3

≡

D

V

GS=

1.0A

GS=

4.5V

0

0.5

6

6

15

6 13

7 9

nC

pF

nS

120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com

2N7002 2008. V1