ST Z0103DN, Z0103MN, Z0103SN, Z0103NN, Z0107DN User Manual

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FEATURES

I
V
I

=1A

T(RMS)

=400V to 800V

DRM

≤ 3mAto ≤ 25mA

GT

DESCRIPTION

The Z01xxxN series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
high volume applications using surface mount
technology.

ABSOLUTE RATINGS

(limitingvalues)

Z01xxxN

SENSITIVEGATE TRIACS

A2

A1

A2

G

SOT223

(Plastic)

Symbol Parameter Value Unit

I

T(RMS)

RMSon-statecurrent

Ttab=90 °C1 A

(360°conductionangle)

I

TSM

Nonrepetitivesurge peak on-statecurrent
(T

initial= 25°C)

j

tp = 8.3 ms 8.5 A

tp = 10 ms 8

2

tI

I

dI/dt Criticalrateof riseofon-statecurrent

2

t Valuefor fusing tp = 10 ms 0.35 A2s

=50mA diG/dt= 0.1 A/µs.

I

G

Repetitive

F = 50 Hz

Non

10 A/µs

50

Repetitive

T

stg

T

j

Storageand operating junctiontemperature range

-40, + 150

-40, + 125

°

C

Tl Maximumlead temperatureforsolderingduring 10s 260 °C

Voltage

Symbol Parameter

Unit

DMSN

V

DRM

V

RRM

Repetitivepeak off-statevoltage
T

= 125°C

j

400 600 700 800 V

May 1998 Ed: 1A

1/6

Z01xxxN

THERMALRESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junctionto ambient 60

Rth(j-t) Junctionto leadsfor D.C 30 °C/W
Rth(j-t)

GATECHARACTERISTICS

P

= 0.1W PGM= 2 W (tp = 20 µs) IGM= 1 A (tp =20 µs)

G (AV)

Junctionto leadsfor A.C 360°conductionangle (F=50Hz)

(maximumvalues)

25

ELECTRICAL CHARACTERISTICS

Symbol TestConditions

Quadrant

Sensitivity

03 07 09 10

I

GT

VD=12V (DC) RL=140Ω Tj= 25°C I-II-III MAX 3 5 10 25 mA

IV MAX 5 7 10 25

V

GT

V

GD

tgt V

VD=12V (DC) RL=140Ω
VD=V

DRMRL

D=VDRMIG

I

=1.4A

T

dI

/dt = 0.5A/µs

G

Ω

=3.3k

=40mA

Tj=25°C I-II-III-IV MAX 1.5 V

Tj=125°C I-II-III-IV MIN 0.2 V

Tj=25°C I-II-III-IV TYP 2 µs

°

C/W

°

C/W

Unit

I

*I

H

I

L

*ITM= 1.4A tp=380µs Tj=25°C MAX 1.8 V

V

TM

I

DRM

I

RRM

dV/dt* VD=67%V

(dV/dt)c*

= 50 mA Gateopen Tj=25°C MAX7 101025 mA

T

IG=1.2 I

VD=V
VR=V

GT

DRM
RRM

Gateopen Tj=110°C MIN 10 20 50 100 V/µs

DRM

(dI/dt)c= 0.44A/ms

* For either polarityof electrodeA

ORDERINGINFORMATION

Z0107MN

TRIACTOP GLASS

Tj=25°C I-III-IV TYP 7 10 10 25 mA

II TYP 14 20 20 50

Tj=25°C MAX 10 µA

Tj=110°C MAX 200

Tj=110°C MIN 2 5 V/µs

voltagewith referenceto electrodeA

2

TYP 1 1

1

PACKAGE:
N = SOT223

2/6

CURRENT

SENSITIVITY

VOLTAGE

Z01xxxN

Fig.1 :

Maximum power dissipation versus RMS

on-statecurrent.

P(W)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig.3 :

RMS on-state current versus tab tempera-

180

=30

O

=60

o

=90

o

=120

o

= 180

o

o

I(A)

T(RMS)

ture.

I (A)

T(RMS)

1.2

Fig.2:

Correlationbetweenmaximumpowerdissi­pation and maximum allowable temperature
(Tamband Ttab).

o

P(W)

Ttab ( C)

1.6

1.4

1.2

1.0

o

Rth(j-a) C/W

o

Rth(j-t) C/W

0.8

0.6

0.4

0.2

0.0

0 20406080100120140

Fig.4 :

o

Tamb ( C)

Relative variation of thermal impedance

-90

-95

-100

-105

-110

-115

-120

-125

junctionto ambient versus pulseduration.

Zth(j-a)/Rth(j-a)

1.00

1.0

0.8

=180

o

0.6

0.4

0.2

0

0 102030405060708090100110120130

o

Ttab( C)

Fig.5: Relativevariationof gatetriggercurrentand

holdingcurrentversusjunction temperature.

Igt[Tj]
Igt[Tj=25 C]

2.6

2.4

2.2

2.0

1.8

1.6

1.4
Ih

1.2

1.0

0.8

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140

o

Igt

Tj( C)

Ih[Tj]
Ih[Tj=25 C]

o

o

0.10

Standard foot print , e(Cu) =35

0.01
1E-3 1E-2 1E-1 1 E+0 1E+1 1E+2 5E+2

m

tp(s)

Fig.6 : Non repetitive surge peak on-state current

versusnumberof cycles.

I (A)

TSM

8

6

4

2

Number of cycles

0

1101001000

Tj initial = 25 C

o

3/6

Z01xxxN

Fig.7:

for a sinusoidal pulsewith width : tp ≤ 10ms, and
correspondingvalueofI

100

Nonrepetitivesurge peakon-state current

2

t.

I (A). I2t(A2s)

TSM

Tj initial = 25 C

I

TSM

o

Fig.8:

I (A)

TM

10

On-statecharacteristics(maximumvalues).

Tj initial

o

25 C

10

1

Tj max

1

I2t

tp(ms)

0.1
110

0.1

00.511.522.533.544.55

Tj max
Vto =1.10 V
Rt =0.420

V (V)

TM

4/6

PACKAGEMECHANICAL DATA

SOT223(Plastic)

A

A1

H

E

B1

e1

D

B

e

t

V

S

Z01xxxN

DIMENSIONS

REF.

V1

A1

V2

A 1.50 1.70 0.059 0.067

A1 0.02 0.10 0.001 0.004

C

B 2.95 3.15 0.090 0.124

B1 0.65 0.85 0.026 0.033

O

C 0.25 0.35 0.010 0.014
D 6.30 6.70 0.248 0.264
e 2.3 0.091

e1 4.6 0.181

E 3.30 3.70 0.130 0.146
H 6.70 7.30 0.264 0.287
O 0.63 0.65 0.67 0.025 0.026 0.026
S 0.85 1.05 0.033 0.041

t 1.10 1.30 0.043 0.051

V10°max
V1 10°min 16°max
V2 10°min 16°max

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Weight: 0.11 g

FOOTPRINT

5/6

Z01xxxN

MARKING

Z0103DN Z3D
Z0103MN Z3M

Z0103SN Z3S
Z0103NN Z3N
Z0107DN Z7D
Z0107MN Z7M

Z0107SN Z7S
Z0107NN Z7N
Z0109DN Z9D
Z0109MN Z9M

Z0109SN Z9S
Z0109NN Z9N
Z0110DN Z0D
Z0110MN Z0M

Z0110SN Z0S
Z0110NN Z0N

Type Marking

Informationfurnished is believed tobeaccurate and reliable. However, STMicroelectronicsassumes no responsibility for theconsequences of
use of such information nor for any infringementof patents or otherrights ofthird parties which may resultfrom its use. No license isgranted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationsmentioned in this publication are subject to
change without notice. This publicationsupersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written ap­proval of STMicroelectronics.

 1998 STMicroelectronics - Printed inItaly - All rights reserved.

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