ST Z01 User Manual

Z01

Standard 1A Triacs

Features

■ On-state rms current, I

■ Repetitive peak off-state voltage, V

T(RMS)

600 or 800 V

■ Triggering gate current, I

1 A

GT (Q1)

DRM/VRRM

3 to 25 mA

Description

The Z01 series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...

Different gate current sensitivities are available, allowing optimized performance when driven directly through microcontrollers.

A2

A1

TO-92

Z01xxA

G

A2

G

A1

G

SMBflat-3L

Z01xxMUF

A1

A2

G

A1

SOT-223

Z01xxN

A2

December 2010 Doc ID 7474 Rev 10 1/12

www.st.com

12

Characteristics Z01

1 Characteristics

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

SOT-223 T

I

T(RMS)

On-state rms current (full sine wave)

SMBflat-3L T

I

dI/dt

I

P

G(AV)

T

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Non repetitive surge peak on-state

TSM

current (full cycle, T

²

tI²t Value for fusing tp = 10 ms 0.35 A²s

I

initial = 25 °C)

j

Critical rate of rise of on-state current

= 2 x IGT , tr ≤ 100 ns

I

G

Peak gate current tp = 20 µs Tj = 125 °C 1 A

GM

Average gate power dissipation Tj = 125 °C 1 W

Storage junction temperature range

stg

T

Operating junction temperature range

j

F = 50 Hz t = 20 ms 8

F = 60 Hz t = 16.7 ms 8.5

F = 120 Hz T

= 90 °C

tab

= 50 °C

L

= 107 °C

tab

= 125 °C 20 A/µs

j

1ATO-92 T

- 40 to + 150

- 40 to + 125

Z01

Symbol Test conditions Quadrant

03 07 09 10

(1)

I

GT

V

I

V

H

VD = 12 V,

= 30 Ω

R

L

GT

GD

VD = V RL = 3.3 kΩ,

= 125 °C

T

j

DRM

,

(2) IT = 50 mA MAX. 7 10 10 25 mA

I - II - III

MAX.

IV 5 7 10 25

ALL MAX. 1.3 V

ALL MIN. 0.2 V

I - III - IV

I

L

IG = 1.2 I

GT

II 15 20 25 50

MAX.

3 5 10 25

7101525

A

°C

Unit

mA

VD = 67% V

(2)

dV/dt

Tj = 110 °C

(dV/dt)

1. Minimum IGT is guaranteed at 5% of IGT max.

2. For both polarities of A2 referenced to A1.

(dI/dt)c = 0.44 A/ms,

c

(2)

= 110 °C

T

j

gate open

DRM

MIN. 10 20 50 100 V/µs

MIN. 0.5 1 2 5 V/µs

2/12 Doc ID 7474 Rev 10

Z01 Characteristics

0

55075

00

5

Table 3. Static characteristics

Symbol Test conditions Value Unit

(1)

V

R

I I

1. For both polarities of A2 referenced to A1.

Table 4. Thermal resistances

Symbol Parameter Value Unit

ITM = 1.4 A, tp = 380 µs Tj = 25 °C MAX. 1.6 V

TM

(1)

Threshold voltage Tj = 125 °C MAX. 0.95 V

to

(1)

Dynamic resistance Tj = 125 °C MAX. 400 mΩ

d

DRM

RRM

V

DRM

= V

RRM

Tj = 25 °C

MAX.

= 125 °C 0.5 mA

T

j

5µA

R

Junction to tab (AC) SOT-223

th(j-t)

Junction to tab (AC) SMBflat-3L 14

th(j-t)

Junction to lead (AC) TO-92 60

th(j-I)

(1)

Junction to ambient

th(j-a)

S

1. S = copper surface under tab.

Figure 1. Maximum power dissipation

versus on-state rms current (full cycle)

P(W)

1.50

α=180 °

1.25

1.00

0.75

0.50

0.25

I (A)

0.00

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T(RMS)

= 5 cm

180°

25

MAX.

SOT-223 60

²

SMBflat-3L 75

TO-92 150

Figure 2. On-state rms current versus lead

(TO-92) or tab (SOT-223, SMBflat3L) temperature (full cycle)

I (A)

T(RMS)

1.2

1.0

0.8

0.6

0.4

0.2

T or (°C)

0.0 2

lTtab

SOT-223

TO-92

1

°C/W

SMBF3L

12

Doc ID 7474 Rev 10 3/12

Characteristics Z01

/

Figure 3. On-state rms current versus

ambient temperature (free air convection full cycle)

I (A)

T(RMS)

1.2

1.0

0.8

0.6

0.4

R = 150°C/W

th(j-a)

(TO-92)

R = 60°C/W

th(j-a)

(SOT-223)

R

th(j -a)

(SMBflat-3L)

= 100°C/W

0.2

T (°C)

amb

0.0 0 25 50 75 100 125

Figure 5. Relative variation of holding

current and latching current versus junction temperature (typ. values)

I,I [T]

HL j

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125

I , I [T =25°C]

HL j

T (°C)

j

I

Figure 4. Relative variation of thermal

impedance versus pulse duration (Z

K=[Z /R

1.00

0.10

0.01

th(j-a) th(j-a)

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

th(j-a)

)

]

Z01xxA

Z01xxMUF

Copper surface area

= 5cm²

Z01xxN

t (s)

p

Figure 6. Relative variation of gate trigger

current (I

) and voltage (VGT)

GT

versus junction temperature

IGT,VGT[Tj]/IGT,VGT[Tj=25 °C]

3.0

2.5

2.0

1.5

VGTQ1-Q2-Q3-Q4

I

L

H

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125

IGTQ1-Q2

IGTQ3

IGTQ4

(°C)

T

j

Figure 7. Surge peak on-state current versus

number of cycles

I (A)

TSM

9

8

7

6

5

4

3

2

Repetitive

T = 95 °C

1

amb

0

1 10 100 1000

Non repetitive

T initial = 25 °C

j

4/12 Doc ID 7474 Rev 10

T = 20 ms

One cycle

Number of cycles

Figure 8. Non-repetitive surge peak

on-state current and corresponding value of I

TSM

22

dI/dt limitation:

20A/µs

I (A), I t (A s)

100.0

10.0

1.0

0.1

0.01 0.10 1.00 10.00

2

t sinusoidal pulse width

t (ms)

p

T initial = 25°C

j

I

TSM

2

It