ST Z00607 User Manual

Z00607

Standard

0.8 A Triacs

Main Features

Symbol	Value	Unit
IT(RMS)	0.8	A
VDRM/VRRM	600	V
IGT (Q1)	5	mA

Description

The Z00607 is suitable for low power AC switching applications. Typical applications include home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...

Thanks to the low gate triggering current these triacs can be driven directly by microcontrollers.

Table 1. Absolute maximum ratings

A2

G

A1

			A2
			G
		A2	A2
	A1 G		A1

TO-92	SOT-223
Z00607MA	Z00607MN

Order Codes

Part Number	Marking
Z00607MA 1BA2	Z0607MA
Z00607MA 2BL2	Z0607MA
Z00607MA 5BL2	Z0607MA
Z00607MN 5AA4	Z6M

	Symbol	Parameter			Value	Unit
	IT(RMS)	RMS on-state current	SOT-223	Ttab = 85° C	0.8	A
		(full sine wave)	TO-92	TL = 50° C
	ITSM	Non repetitive surge peak on-state	F = 50 Hz	t = 20 ms	9	A
		current (full cycle, Tj initial = 25° C)	F = 60 Hz	t = 16.7 ms	9.5
	I²t	I²t Value for fusing	tp = 10 ms		0.45	A²s
	dI/dt	Critical rate of rise of on-state current	F = 120 Hz	Tj = 110° C	20	A/µs
		IG = 2 x IGT , tr ≤ 100 ns
	IGM	Peak gate current	tp = 20 µs	Tj = 110° C	1	A
	PG(AV)	Average gate power dissipation		Tj = 110° C	0.1	W
	Tstg	Storage junction temperature range			- 40 to + 150	° C
	Tj	Operating junction temperature range			- 40 to + 110
	April 2007		Rev 8			1/7
						www.st.com

Characteristcs	Z00607

1 Characteristcs

Table 2.	Electrical characteristics (Tj = 25° C, unless otherwise specified)
Symbol			Test Conditions					Quadrant		Value	Unit
(1)								I - II - III		5
IGT	VD = 12 V RL = 30 Ω							IV	MAX	7	mA
VGT								ALL	MAX	1.3	V
VGD	VD = VDRM			RL = 3.3 kΩ Tj = 110° C				ALL	MIN	0.2	V
IH (2)	IT = 200 mA								MX.	5	mA
IL	IG = 1.2 IGT							I - III - IV	MAX	10	mA
								II		20
dV/dt (2)	V	D	= 67% V	DRM	gate open T = 110° C				MIN	10	V/µs
						j
(dV/dt)c (2)	(dV/dt)c = 0.35 A/ms					T = 110° C			MIN	1.5	V/µs
						j

1.minimum IGT is guaranteed at 5% of IGT max.

2.for both polarities of A2 referenced to A1.

	Table 3.		Static characteristics
	Symbol			Test Conditions			Value	Unit
		(1)	ITM = 1.1 A	tp = 380 µs	Tj = 25° C	MAX.	1.5	V
	VTM
	Vto	(1)	Threshold voltage		Tj = 110° C	MAX.	0.95	V
	R	(1)	Dynamic resistance		T = 110° C	MAX.	420	mΩ
	d				j
	IDRM		VDRM = VRRM = 600 V		Tj = 25° C	MAX.	5	µA
	IRRM				T = 110° C		0.1	mA
					j

1. for both polarities of A2 referenced to A1.

	Table 4.	Thermal resistances
	Symbol		Parameter		Value	Unit
	Rth(j-t)	Junction to tab (AC)		SOT-223	25	° C/W
	Rth(j-I)	Junction to lead (AC)		TO-92	60
	Rth(j-a)	Junction to ambient	S(1) = 5 cm²	SOT-223	60	° C/W
				TO-92	150

1.S = Copper surface under tab.

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Z00607	Characteristcs
Figure 1. Maximum power dissipation	Figure 2. Relative variation of gate trigger
versus RMS on-state current	current, holding current and
(full cycle)	latching current versus junction
	temperature (typical values)

P(W)

1.0

0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1				IT(RMS)(A)
0.0
0.0	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8

IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
		IGT
1.5
	IH & IL
1.0
0.5
				Tj (°C)
0.0
-40	-20	0	20	40	60	80	100	120

Figure 3. Surge peak on-state current versus Figure 4.	Non-repetitive surge peak
number of cycles	on-state current for a sinusoidal
	pulse with width tp < 10 ms and
	corresponding value of I2t

ITSM (A)				ITSM (A), I2t (A2s)
10				200.0
9				100.0			Tj initial = 25°C
8			t=20ms		dI/dt limitation:
7			One cycle		20A/µs		ITSM
	Non repetitive
6	Tj initial = 25°C			10.0
5
4	Repetitive
3	Tamb = 25°C			1.0
2							I2t
1	Number of cycles					tp (ms)
0				0.1
1	10	100	1000	0.01	0.10	1.00	10.00

Figure 5. On-state characteristics	Figure 6. Relative variation of critical rate
(maximum values)	of decrease of main current versus
	(dV/dt)c (typical values)

ITM(A)											(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
10.0											10.0
											8.0
	Tj = Tjmax.										6.0
1.0
											4.0
								Tj=max.
				Tj = 25°C				Vt0=0.95 V
								Rd=420 mΩ			2.0
0.1					VTM (V)						0.0	(dV/dt)c (V/µs)
0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0	4.5	5.0	0.1	1.0	10.0

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