ST Z00607 User Manual
Standard
Z00607
0.8 A Triacs
Main Features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
0.8 A
600 V
5mA
Description
The Z00607 is suitable for low power AC
switching applications. Typical applications
include home appliances (electrovalve, pump,
door lock, small lamp control), fan speed
controllers,...
Thanks to the low gate triggering current these
triacs can be driven directly by microcontrollers.
A2
G
A1
A2
G
A1
TO-92
Z00607MA
Order Codes
Part Number Marking
Z00607MA 1BA2 Z0607MA
Z00607MA 2BL2 Z0607MA
Z00607MA 5BL2 Z0607MA
Z00607MN 5AA4 Z6M
A2
G
A2
A1
SOT-223
Z00607MN
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
tI
I
dI/dt
I
GM
P
G(AV)
T
stg
T
j
RMS on-state current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
²
t Value for fusing tp = 10 ms 0.45 A²s
initial = 25° C)
j
Critical rate of rise of on-state current
= 2 x IGT , tr ≤ 100 ns
I
G
SOT-223 T
TO-92 T
F = 50 Hz t = 20 ms 9
F = 60 Hz t = 16.7 ms 9.5
F = 120 Hz T
Peak gate current tp = 20 µs Tj = 110° C 1 A
Average gate power dissipation Tj = 110° C 0.1 W
Storage junction temperature range
Operating junction temperature range
= 85° C
tab
= 50° C
L
0.8 A
A
= 110° C 20 A/µs
j
- 40 to + 150
- 40 to + 110
° C
April 2007 Rev 8 1/7
www.st.com
7
Characteristcs Z00607
1 Characteristcs
Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified)
Symbol Test Conditions Quadrant Value Unit
(1)
I
GT
V
V
I
H
GT
GD
VD = 12 V RL = 30 Ω
VD = V
RL = 3.3 kΩ Tj = 110° C ALL MIN 0.2 V
DRM
(2) IT = 200 mA MX. 5 mA
I - II - III
MAX
IV 7
ALL MAX 1.3 V
I - III - IV
I
dV/dt
(dV/dt)c
1. minimum IGT is guaranteed at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
Table 3. Static characteristics
IG = 1.2 I
L
(2)
VD = 67% V
(2)
(dV/dt)c = 0.35 A/ms Tj = 110° C MIN 1.5 V/µs
GT
II 20
gate open Tj = 110° C MIN 10 V/µs
DRM
MAX
5
10
Symbol Test Conditions Value Unit
(1)
V
TM
V
to
R
d
I
DRM
I
RRM
1. for both polarities of A2 referenced to A1.
Table 4. Thermal resistances
ITM = 1.1 A tp = 380 µs Tj = 25° C MAX. 1.5 V
(1)
Threshold voltage Tj = 110° C MAX. 0.95 V
(1)
Dynamic resistance Tj = 110° C MAX. 420 mΩ
T
= 25° C
V
DRM
= V
RRM
= 600 V
j
T
= 110° C 0.1 mA
j
MAX.
5µA
mA
mA
Symbol Parameter Value Unit
R
th(j-t)
R
th(j-I)
R
th(j-a)
1. S = Copper surface under tab.
Junction to tab (AC) SOT-223 25
Junction to lead (AC) TO-92 60
(1)
S
= 5 cm
Junction to ambient
2/7
²
SOT-223 60
TO-92 150
° C/W
° C/W
Z00607 Characteristcs
Figure 1. Maximum power dissipation
versus RMS on-state current
(full cycle)
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I (A)
T(RMS)
Figure 3. Surge peak on-state current versus
number of cycles
I (A)
TSM
10
9
8
7
6
5
4
3
2
1
0
Repetitive
T = 25°C
amb
1 10 100 1000
Non repetitive
T initial = 25°C
j
Number of cycles
t=20ms
One cycle
Figure 2. Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
I,I,I[T] /
GTHL j
2.5
2.0
1.5
1.0
0.5
0.0
-40 -20 0 20 40 60 80 100 120
IH&I
I
GT
L
I , I , I [T =25°C]
GTHL j
T (°C)
j
Figure 4. Non-repetitive surge peak
on-state current for a sinusoidal
pulse with width t
corresponding value of I
TSM
dI/dt limitation:
20A/µs
22
t (ms)
p
I (A), I t (A s)
200.0
100.0
10.0
1.0
0.1
0.01 0.10 1.00 10.00
< 10 ms and
p
2
t
T initial = 25°C
j
2
It
I
TSM
Figure 5. On-state characteristics
(maximum values)
I (A)
TM
10.0
T = max.jT
1.0
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
j
T = 25°C
j
V (V)
TM
T=max.
j
V =0.95 V
t0
R =420 m
d
Figure 6. Relative variation of critical rate
of decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
10.0
8.0
6.0
4.0
Ω
2.0
0.0
0.1 1.0 10.0
(dV/dt)c (V/µs)
3/7
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