ST Z00607 User Manual

Standard

Z00607

0.8 A Triacs

Main Features

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT (Q1)

0.8 A

600 V

5mA

Description

The Z00607 is suitable for low power AC switching applications. Typical applications include home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...

Thanks to the low gate triggering current these triacs can be driven directly by microcontrollers.

A2

G

A1

A2

G

A1

TO-92

Z00607MA

Order Codes

Part Number Marking

Z00607MA 1BA2 Z0607MA

Z00607MA 2BL2 Z0607MA

Z00607MA 5BL2 Z0607MA

Z00607MN 5AA4 Z6M

A2

G

A2

A1

SOT-223

Z00607MN

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

²

tI

I

dI/dt

I

GM

P

G(AV)

T

stg

T

j

RMS on-state current (full sine wave)

Non repetitive surge peak on-state current (full cycle, T

²

t Value for fusing tp = 10 ms 0.45 A²s

initial = 25° C)

j

Critical rate of rise of on-state current

= 2 x IGT , tr ≤ 100 ns

I

G

SOT-223 T

TO-92 T

F = 50 Hz t = 20 ms 9

F = 60 Hz t = 16.7 ms 9.5

F = 120 Hz T

Peak gate current tp = 20 µs Tj = 110° C 1 A

Average gate power dissipation Tj = 110° C 0.1 W

Storage junction temperature range Operating junction temperature range

= 85° C

tab

= 50° C

L

0.8 A

A

= 110° C 20 A/µs

j

- 40 to + 150

- 40 to + 110

° C

April 2007 Rev 8 1/7

www.st.com

7

Characteristcs Z00607

1 Characteristcs

Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified)

Symbol Test Conditions Quadrant Value Unit

(1)

I

GT

V

I

H

GT

GD

VD = 12 V RL = 30 Ω

VD = V

RL = 3.3 kΩ Tj = 110° C ALL MIN 0.2 V

DRM

(2) IT = 200 mA MX. 5 mA

I - II - III

MAX

IV 7

ALL MAX 1.3 V

I - III - IV

I

dV/dt

(dV/dt)c

1. minimum IGT is guaranteed at 5% of IGT max.

2. for both polarities of A2 referenced to A1.

Table 3. Static characteristics

IG = 1.2 I

L

(2)

VD = 67% V

(2)

(dV/dt)c = 0.35 A/ms Tj = 110° C MIN 1.5 V/µs

GT

II 20

gate open Tj = 110° C MIN 10 V/µs

DRM

MAX

5

10

Symbol Test Conditions Value Unit

(1)

V

TM

V

to

R

d

I

DRM

I

RRM

1. for both polarities of A2 referenced to A1.

Table 4. Thermal resistances

ITM = 1.1 A tp = 380 µs Tj = 25° C MAX. 1.5 V

(1)

Threshold voltage Tj = 110° C MAX. 0.95 V

(1)

Dynamic resistance Tj = 110° C MAX. 420 mΩ

T

= 25° C

V

DRM

= V

RRM

= 600 V

j

T

= 110° C 0.1 mA

j

MAX.

5µA

mA

Symbol Parameter Value Unit

R

th(j-t)

R

th(j-I)

R

th(j-a)

1. S = Copper surface under tab.

Junction to tab (AC) SOT-223 25

Junction to lead (AC) TO-92 60

(1)

S

= 5 cm

Junction to ambient

2/7

²

SOT-223 60

TO-92 150

° C/W

Z00607 Characteristcs

Figure 1. Maximum power dissipation

versus RMS on-state current (full cycle)

P(W)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

I (A)

T(RMS)

Figure 3. Surge peak on-state current versus

number of cycles

I (A)

TSM

10

9

8

7

6

5

4

3

2

1

0

Repetitive

T = 25°C

amb

1 10 100 1000

Non repetitive

T initial = 25°C

j

Number of cycles

t=20ms

One cycle

Figure 2. Relative variation of gate trigger

current, holding current and latching current versus junction temperature (typical values)

I,I,I[T] /

GTHL j

2.5

2.0

1.5

1.0

0.5

0.0

-40 -20 0 20 40 60 80 100 120

IH&I

I

GT

L

I , I , I [T =25°C]

GTHL j

T (°C)

j

Figure 4. Non-repetitive surge peak

on-state current for a sinusoidal pulse with width t corresponding value of I

TSM

dI/dt limitation:

20A/µs

22

t (ms)

p

I (A), I t (A s)

200.0

100.0

10.0

1.0

0.1

0.01 0.10 1.00 10.00

< 10 ms and

p

2

t

T initial = 25°C

j

2

It

I

TSM

Figure 5. On-state characteristics

(maximum values)

I (A)

TM

10.0

T = max.jT

1.0

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

j

T = 25°C

j

V (V)

TM

T=max.

j

V =0.95 V

t0

R =420 m

d

Figure 6. Relative variation of critical rate

of decrease of main current versus (dV/dt)c (typical values)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

10.0

8.0

6.0

4.0

Ω

2.0

0.0

0.1 1.0 10.0

(dV/dt)c (V/µs)

3/7