X04 Series
SENSITIVE 4A SCRS
MAIN F EATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
4A
600 and 800 V
50 to 200 µA
DESCRIPTION
Thanks to h ighly sensitive triggering levels, the
X04 SCR series is suitable for all a pplications
where the availablegatecurrent is l imited, suchas
capacitive discharge ignitions, motor control in
kitchen aids, overvoltage crowbar protection in low
TO202-3
(X04xxF)
power supplies...
ABSOLUTE RATINGS (l imiting values)
Symbol Parameter Value Unit
I
T(RMS)
IT
(AV)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
Tj
RMS on-state current (180° conduction angle) Tl = 60°C 4 A
Tamb = 25°C 1.35
Average on-state current ( 1 80° conduction angle) Tl = 60°C 2.5 A
Tamb = 25°C 0.9
Non repetitivesurgepeak on-state
current
tI
²
t Value for fusing
Critical rate of rise of on-state current
I
=2xIGT,tr≤100ns
G
Peak gate current tp = 20 µs Tj = 125°C 1.2 A
Average gate power dissipation Tj = 125°C 0.2 W
Storage junction temperature range
Operating junction temperature range
tp = 8.3 ms
Tj = 25°C
tp = 10 ms 30
tp = 10 ms Tj = 25°C 4.5
F = 60 Hz Tj = 125°C 50 A/µs
- 40to+150
-40to+125
33 A
2
A
S
°C
September 2000 - Ed: 3
1/5
X04 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions X04xx Unit
02 05
I
GT
VD=12V RL=140Ω
V
GT
V
V
dV/dt
V
V
I
DRM
I
RRM
VD=V
GD
RG
I
H
I
L
TM
t0
R
d
DRMRL
IRG=10µA
I
=50mA RGK=1kΩ
T
IG=1mA RGK=1kΩ
=67%V
V
D
ITM=8A tp=380µs
Threshold voltage Tj = 125°C MAX. 0.95 V
Dynamic resistance Tj = 125°C MAX. 100 mΩ
V
DRM=VRRM
=3.3kΩ RGK=1kΩ
DRMRGK
THERMAL RESISTANCES
=1kΩ
RGK=1kΩ
Tj = 125°C MIN.
Tj = 110°C MIN. 10 15 V/µs
Tj = 25°C MAX. 1.8 V
Tj = 25°C MAX. 5 µA
Tj = 125°C 1 mA
MIN. _ 20
MAX. 200 50
MAX. 0.8 V
0.1 V
MIN.
8V
MAX. 5 mA
MIN. 6 mA
µA
Symbol Parameter Value Unit
R
R
th(j-a)
th(j-l)
Junction to leads (DC)
Junction to ambient (DC)
15
100
PRODUCT SELECTOR
Part Number
Sensitivity
600 V 800 V
X0402MF X 200 µA TO202-3
X0402NF X 200 µA TO202-3
X0405MF X 50 µA TO202-3
X0405NF X 50 µA TO202-3
Voltage
Package
°C/W
2/5
X04 Series
ORDERING INFORMATION
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing mode
X04xxyF 1AA2 X04xxyF 0.8 g 250 Bulk
X04xxyF 0AA2 X04xxyF 0.8 g 50 Tube
Note:xx = sensitivity, y = voltage
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 3: Relative variation of therm al impedance
junction to ambient versus pulse duration.
3/5
X04 Series
Fig. 4: Relative variation of gate trigger current,
holding current and l atching current versus
junction temperature (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 5: Relative variation of holding current
versus gat e-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathod e capacitance (typical
values).
Fig. 8: Surge peak on-state current versus
number of cycles.
4/5
Fig. 9: Non-repetitive surge pea k on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
Fig. 10: On-state characteristics (maximum
values).
PACKAGE MECHANICAL DATA
TO202-3 (Plastic)
X04 Series
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 10.1 0.398
C 7.3 0.287
D10.5 0.413
F1.50.059
H0.51 0.020
J 1.5 0.059
M 4.5 0.177
N5.30.209
N1 2.54 0.100
O1.40.055
P0.70.028
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