ST X02 User Manual

X02

1.25 A sensitive gate SCR

Features

■ on-state rms current: 1.25 A

■ repetitive peak off-state voltage: 600 V and

800 V

■ gate triggering current:

50 and 200 µA

Applications

■ ground fault circuit interrupters

■ overvoltage crowbar protection in power

supplies

■ capacitive ignition circuits

Description

The X02 SCR can be used as the on/off function in applications where topology does not offer high current for gate triggering.

This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments.

A

K

SOT-223

X02xxN

G

K

G

SMBflat-3L

X0202NUF

A

K

A

G

K

TO-92

X02xxA

A

Table 1. Device summary

Vol tag e

Order code

Sensitivity µA Package

600 V 800 V

X0202MA Y 200 TO-92

X0202MN Y 200 SOT-223

X0202NA Y 200 TO-92

X0202NN Y 200 SOT-223

X0205MA Y 50 TO-92

X0205NA Y 50 TO-92

X0202NUF Y 200 SMBflat-3L

January 2011 Doc ID 7480 Rev 4 1/11

www.st.com

11

Characteristics X02

1 Characteristics

Table 2. Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified)

Symbol Parameter Value Unit

TO-92 T

I

T(RMS)

On-state rms current (180 °Conduction angle)

SMBflat-3L T

TO-92 T

IT

Average on-state current (180 °Conduction angle)

(AV)

SMBflat-3L T

t

= 8.3 ms

I

TSM

di/dt

I

P

G(AV)

T

Table 3. Electrical characteristics (TJ = 25 °C unless otherwise specified)

Non repetitive surge peak on-state current

²

tI²t Value for fusing tp = 10 ms Tj = 25 °C 2.5 A2s

I

Critical rate of rise of on-state current I

= 2 x IGT , tr ≤ 100 ns

G

Peak gate current tp = 20 µs Tj = 125 °C 1.2 A

GM

Average gate power dissipation Tj = 125 °C 0.2 W

Storage junction temperature range

stg

T

Operating junction temperature range

j

p

= 10 ms 22.5

t

p

F = 60 Hz T

= 63 °C

L

= 99 °C

tab

= 111 °C

tab

= 63 °C

L

= 99 °C

tab

= 111 °C

tab

1.25 ASOT-223 T

0.8 ASOT-223 T

25

= 25 °C

T

j

= 125 °C 50 A/µs

j

- 40 to + 150

- 40 to + 125

A

°C

Symbol Test conditions X0202 X0205 Unit

I

GT

VD = 12 V, RL = 140 Ω

V

GT

V

dV/dt V

Table 4. Static electrical characteristics

VD = V

GD

RG

I

H

L

DRM, RL

IRG = 10 µA Min. 8 V

IT = 50 mA, RGK = 1 kΩ Max. 5 mA

IG = 1 mA, RGK = 1 kΩ Max. 6 mA

= 67% V

D

= 3.3 kΩ , RGK = 1 kΩ Tj = 125 °C Min. 0.1 V

DRM, RGK

= 1 kΩ Tj = 110 °C Min. 10 15 V/µs

Symbol Test conditions X0202 X0205 Unit

V

TM

V

TO

R

I

DRM IRRMVDRM

ITM = 2.5 A, tp = 380 µs Tj = 25 °C

Threshold voltage

Dynamic resistance 200 mΩ

d

= V

RRM, RGK

= 1 kΩ

Min. 20

Max. 200 50

Max. 0.8 V

1.45 V

0.9 V

= 125 °C

T

j

T

= 25 °C 5 µA

j

= 125 °C 500

T

j

Max.

µA

2/11 Doc ID 7480 Rev 4

X02 Characteristics

Table 5. Thermal resistances

Symbol Parameter Value Unit

R

th(j-l)

th(j-t)

Junction to leads (DC) TO-92

60

Junction to tab (DC) SOT-223 25

Junction to tab (DC) SMBflat-3L 14

Max.

TO-92 150

R

th(j-a)

Junction to ambient (DC)

S = 5 cm

SOT-223 60

2

SMBflat-3L 75

P(W)

dissipation versus average on-state current (full cycle)

360°

α

α = 180°

I (A)

T(AV)

Figure 2. Average and DC on-state current

versus tab (SOT-223, SMBflat-3L) or lead (TO-92) temperature

I (A)

T(AV)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

D.C.(TO-92)

α = 180° (TO-92)

α = 180° (SOT-223)

T or T (°C)

lead tab

0 25 50 75 100 125

D.C.(SOT-223)

α = 180° (SMBflat-3L)

D.C.(SMBflat-3L)

Figure 1. Maximum average power

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

°C/W

Figure 3. Average and DC on-state current

versus ambient temperature

I (A)

T(AV)

1.4

1.2

D.C.(SMBflat-3L)

1.0

0.8

0.6

α = 180° (TO-92)

0.4

0.2

0.0

0 25 50 75 100 125

D.C.(TO-92)

α = 180° (SOT-223)

T (°C)

amb

D.C.(SOT-223)

α = 180° (SMBflat-3L)

Figure 4. Relative variation of thermal

impedance junction to ambient versus pulse duration

K=[Z /R

1.00

th(j-a) th(j-a)

0.10

0.01

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05

SOT-223

TO-92

]

SMBflat-3L

t (s)

p

Doc ID 7480 Rev 4 3/11

Characteristics X02

Figure 5. Relative variation of triggering,

holding and latching current versus junction temperature

I,I,I[T] /

GT H L j

1.50

1.25

1.00

0.75

0.50

0.25

0.00

-40 -20 0 20 40 60 80 100 120 140

I ,I ,I [T =25°C]

GT H L j

T (°C)

j

Typical values

IH& I

R = 1k

GK

I

GT

L

Ω

Figure 7. Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values)

dV/dt[R ] / dV/dt[ =1k ]GKΩ

10.0

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

R

GK

R(k)GKΩ

Tj= 125°C

V = 0.67 x V

D DRM

Figure 6. Relative variation of holding

current versus gate-cathode resistance (typical values)

I [R ] / I [ =1k ]

HGK HΩRGK

4.0

3.5

Tj=25

3.0

2.5

2.0

1.5

1.0

0.5

0.0

R(k)GKΩ

1.E-02 1.E-01 1.E+00 1.E+01

Figure 8. Relative variation of dV/dt immunity

versus gate-cathode capacitance (typical values)

dV/dt[C ] / dV/dt[ =1k ]GKΩ

20

V = 0.67 x V

D DRM

18

T

= 125°C

j

Ω

R = 1k

GK

16

14

12

10

8

6

4

2

0

24

R

GK

C (nF)

GK

6810

12 14

16 18 20

22

Figure 9. Surge peak on-state current

versus number of cycles

I (A)

TSM

25

20

15

10

Repetitive

T =25°C

5

0

1 10 100 1000

amb

Non repetitive T initial=25°C

j

4/11 Doc ID 7480 Rev 4

t =10ms

p

One cycle

Number of cycles

Figure 10. Non repetitive surge peak on state

current for a sinusoidal pulse and

2

T

T initial = 25°C

j

I

TSM

2

I t

1.00 10.000.100.01

I (A), I t (A s)

TSM

300

dI/dt limitation

100

10

1

corresponding value of I

22

t (ms)

p

ST X02 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Table 1. Device summary

1 Characteristics

Table 4. Static electrical characteristics

Table 5. Thermal resistances