ST X006 User Manual
Features
■ I
■ V
■ I
Description
= 0.8 A
T(RMS)
DRM/VRRM
= 200 µA
GT
X006
0.8 A sensitive gate SCRs
A
= 600 V
G
K
Thanks to highly sensitive triggering levels, the
X006 SCR series is suitable for all applications
where the available gate current is limited, such
as ground fault circuit interrupters, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, etc.
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
K
G
A
TO-92
(X00602A)
A
G
A
K
SOT-223
(X00602N)
April 2008 Rev 5 1/9
www.st.com
9
Characteristics X006
1 Characteristics
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180 °Conduction angle)
SOT-223 T
TO-92 T
TO-92 T
IT
I
TSM
dI/dt
I
P
G(AV)
T
Table 2. Electrical characteristics
Average on-state current (180 °Conduction angle)
(AV)
Non repetitive surge peak on-state current
²
I
tI²t Value for fusing tp = 10 ms Tj = 25 °C 0.4 A
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
Peak gate current tp = 20 µs Tj = 125 °C 1 A
GM
SOT-223 T
= 8.3 ms
t
p
= 10 ms 9
t
p
F = 60 Hz T
Average gate power dissipation Tj = 125 °C 0.1 W
Storage junction temperature range
stg
T
Operating junction temperature range
j
= 85 °C
l
= 100 °C
tab
= 85 °C
l
= 100 °C
tab
0.8 A
0.5 A
10
T
= 25 °C
j
= 125 °C 50 A/µs
j
- 40 to + 150
- 40 to + 125
Symbol Test Conditions Value Unit
A
°C
2
S
I
GT
V
GT
V
GD
V
RGIRG
I
H
I
L
dV/dt V
V
TM
V
t0
R
d
I
DRM
I
RRM
MIN. 15
µA
VD = 12 V, RL = 140 Ω
MAX. 200
MAX. 0.8 V
VD = V
DRM, RL
= 3.3 kΩ , RGK = 1 kΩ Tj = 125 °C MIN. 0.2 V
= 10 µA MIN. 5 V
IT = 50 mA, RGK = 1 kΩ MAX. 5 mA
IG = 1 mA, RGK = 1 kΩ MAX. 6 mA
= 67% V
D
DRM, RGK
= 1 kΩ Tj = 125 °C MIN. 25 V/µs
ITM = 1 A, tp = 380 µs Tj = 25 °C MAX. 1.35 V
Threshold voltage Tj = 125 °C MAX. 0.85 V
Dynamic resistance Tj = 125 °C MAX. 245 mΩ
T
= 25 °C MAX. 1
V
DRM
= V
RRM , RGK
= 1 kΩ
j
Tj = 125 °C MAX. 100
µA
2/9
X006 Characteristics
Table 3. Thermal resistances
Symbol Parameter Value Unit
TO-92 150
R
th(j-a)
R
th(j-l)
R
th(j-t)
Figure 1. Maximum average power
Junction to ambient (DC)
S = 5 cm
2
SOT-223 60
Junction to lead (DC) TO-92 70
Junction to tab (DC) SOT-223 30
Figure 2. Average and DC on-state current
dissipation versus average on-state
versus case temperature (TO-92)
current
P(W)
0.6
α = 180°
0.5
0.4
0.3
0.2
0.1
I (A)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
T(AV)
360°
α
Figure 3. Average and D.C. on-state current
versus ambient temperature (epoxy
I (A)
T(AV)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125
D.C.
= 180°
α
T (°C)
l
TO-92
Figure 4. Average and DC on-state current
versus case temperature (SOT-223)
printed circuit board FR4, copper
thickness = 35 µm, S
= 0.5 cm2)
CU
(TO-92)
°C/W
I (A)
T(AV)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125
α
= 180°
D.C.
T (°C)
amb
TO-92
S = 0.5 cm
CU
I (A)
T(AV)
1.0
2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125
D.C.
= 180°
α
T (°C)
tab
3/9
SOT-223
Loading...