ST VNS3NV04DP-E User Manual

VNS3NV04DP-E

OMNIFET II fully autoprotected Power MOSFET

Features

Max on-state resistance (per ch.)	RON	120 mΩ
Current limitation (typ)	ILIMH	3.5 A
Drain-source clamp voltage	VCLAMP	40 V

■ECOPACK®: lead free and RoHS compliant

■Automotive Grade: compliance with AEC guidelines

■Linear current limitation

■Thermal shutdown

■Short circuit protection

■Integrated clamp

■Low current drawn from input pin

■Diagnostic feedback through input pin

■ESD protection

■Direct access to the gate of the Power MOSFET (analog driving)

■Compatible with standard Power MOSFET

SO-8

Description

The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics™ VIPower™ M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring voltage at the input pin

Table 1.	Device summary
	Package		Order codes
		Tube		Tape and reel
	SO-8	VNS3NV04DP-E		VNS3NV04DPTR-E

March 2011

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www.st.com

Contents	VNS3NV04DP-E

Contents

1	Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 5
2	Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 6
	2.1	Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
	2.2	Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
	2.3	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
	2.4	Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	12
3	Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		16
	3.1	Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	16
	3.2	Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	16
	3.3	Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . .	16
	3.4	Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	16
4	Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		17
	4.1	ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	17
	4.2	SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	17
	4.3	SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	19
5	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		20

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VNS3NV04DP-E	List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 4. Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 5. On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 7. Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 8. Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 9. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 10. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 11. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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List of figures	VNS3NV04DP-E

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 9. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 10. Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 11. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 12. Static drain-source on resistance vs input voltage (part 1). . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 13. Static drain-source on resistance vs input voltage (part 2). . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 14. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 15. Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 16. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 17. Turn-on current slope (part 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 18. Turn-on current slope (part 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 19. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 20. Turn-off drain source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 21. Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 23. Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 24. Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 25. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 26. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 27. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 28. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 30. SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 31. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 32. Tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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VNS3NV04DP-E	Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

		DRAIN1	DRAIN2
		OVERVOLTAGE	OVERVOLTAGE
		CLAMP	CLAMP
INPUT1	GATE			GATE	INPUT2
	CONTROL			CONTROL
		LINEAR	LINEAR
	OVER	CURRENT	CURRENT	OVER
		LIMITER	LIMITER
	TEMPERATURE			TEMPERATURE
		SOURCE1	SOURCE2

Figure 2. Configuration diagram (top view)

					DRAIN 1
SOURCE 1			1	8
INPUT 1					DRAIN 1
SOURCE 2			4	5	DRAIN 2
INPUT 2					DRAIN 2

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Electrical specifications	VNS3NV04DP-E

2 Electrical specifications

Figure 3. Current and voltage conventions

I

RIN1

I

D1

IN1

INPUT 1

DRAIN 1

VIN1

IIN2

R

IN2

I

D2

VDS1

VIN2

INPUT 2

DRAIN 2

VDS1

SOURCE 1

SOURCE 2

2.1Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to Absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE program and other relevant quality document.

Table 2.	Absolute maximum ratings
Symbol	Parameter	Value	Unit
VDSn	Drain-Source Voltage (VINn = 0 V)	Internally clamped	V
VINn	Input voltage	Internally clamped	V
IINn	Input current	+/- 20	mA
RIN MINn	Minimum input series impedance	220	Ω
IDn	Drain current	Internally limited	A
IRn	Reverse DC output current	-5.5	A
VESD1	Electrostatic discharge (R = 1.5 KΩ, C = 100 pF)	4000	V
VESD2	Electrostatic discharge on output pins only (R = 330 Ω,	16500	V
	C = 150 pF)
Ptot	Total dissipation at Tc = 25 °C	4	Ω
Tj	Operating junction temperature	Internally limited	°C
Tc	Case operating temperature	Internally limited	°C
Tstg	Storage temperature	-55 to 150	°C

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VNS3NV04DP-E	Electrical specifications

2.2Thermal data

Table 3.	Thermal data
Symbol	Parameter	Max value	Unit
Rthj-lead	Thermal resistance junction-lead (per channel)	30	°C/W
Rthj-amb	Thermal resistance junction-ambient	80(1)	°C/W

1.When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 μm thick) connected to all DRAIN pins of the relative channel

2.3Electrical characteristics

Values specified in this section are for -40 °C < Tj < 150 °C, unless otherwise stated.

Table 4.	Off
Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
VCLAMP	Drain-source clamp	VIN = 0 V; ID = 1.5 A	40	45	55	V
	voltage
VCLTH	Drain-source clamp	VIN = 0 V; ID = 2 mA	36			V
	threshold voltage
VINTH	Input threshold	VDS = VIN; ID = 1 mA	0.5		2.5	V
	voltage
IISS	Supply current from	VDS = 0 V; VIN = 5 V		100	150	µA
	input pin
VINCL	Input-source clamp	IIN = 1 mA	6	6.8	8	V
	voltage	IIN = -1 mA	-1		-0.3	V
IDSS	Zero input voltage	VDS = 13 V; VIN = 0 V; Tj = 25 °C			30	µA
	drain current
		VDS = 25 V; VIN = 0 V			75	µA
	(VIN = 0 V)

	Table 5.		On
	Symbol		Parameter				Test conditions	Min	Typ	Max	Unit
	RDS(on)		Static drain-source on	VIN = 5 V; ID = 1.5 A; Tj = 25 °C				—	—	120	mΩ
			resistance	VIN = 5 V; ID = 1.5 A				—	—	240	mΩ
	Tj = 25 °C, unless otherwise specified
	Table 6.		Dynamic
	Symbol		Parameter				Test conditions	Min	Typ	Max	Unit
	g	(1)	Forward		V	DD	= 13 V; I = 1.5 A	—	5.0	—	S
			transconductance
		fs					D
	COSS		Output capacitance		VDS = 13 V; f = 1 MHz; VIN = 0 V			—	150	—	pF

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