ST VNS3NV04DP-E User Manual
Features
Max on-state resistance (per ch.) R
Current limitation (typ) I
Drain-source clamp voltage V
ON
LIMH
CLAMP
VNS3NV04DP-E
OMNIFET II
fully autoprotected Power MOSFET
120 mΩ
3.5 A
40 V
■ ECOPACK
■ Automotive Grade: compliance with AEC
®
: lead free and RoHS compliant
guidelines
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
SO-8
Description
The VNS3NV04DP-E device is made up of two
monolithic chips (OMNIFET II) housed in a
standard SO-8 package. The OMNIFET II is
designed using STMicroelectronics™ VIPower™
M0-3 technology and is intended for replacement
of standard Power MOSFETs in up to 50 kHz DC
applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring
voltage at the input pin
Table 1. Device summary
Package
SO-8 VNS3NV04DP-E VNS3NV04DPTR-E
March 2011 Doc ID 018529 Rev 1 1/21
Order codes
Tube Tape and reel
www.st.com
1
Contents VNS3NV04DP-E
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2 Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3 Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 16
3.4 Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 Doc ID 018529 Rev 1
VNS3NV04DP-E List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 7. Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 8. Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 9. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 10. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 11. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Doc ID 018529 Rev 1 3/21
List of figures VNS3NV04DP-E
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 9. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 10. Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 12. Static drain-source on resistance vs input voltage (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 13. Static drain-source on resistance vs input voltage (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 14. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 15. Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 16. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 17. Turn-on current slope (part 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 18. Turn-on current slope (part 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 19. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 20. Turn-off drain source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 21. Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 23. Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 24. Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 25. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 26. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 27. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 28. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 30. SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 31. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 32. Tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4/21 Doc ID 018529 Rev 1
VNS3NV04DP-E Block diagram and pin description
1 Block diagram and pin description
Figure 1. Block diagram
DRAIN1
OVERVO LTAGE
CLAMP
INPUT1
GATE
CONTROL
OVER
TEMPERATURE
LINEAR
CURRENT
LIMITER
SOURCE1
Figure 2. Configuration diagram (top view)
SOURCE 1
INPUT 1
SOURCE 2
INPUT 2
1
4
DRAIN2
SOURCE2
8
5
OVERVO LTAGE
CLAMP
LINEAR
CURRENT
LIMITER
DRAIN 1
DRAIN 1
DRAIN 2
DRAIN 2
GATE
CONTROL
OVER
TEMPERATURE
INPUT2
Doc ID 018529 Rev 1 5/21
Electrical specifications VNS3NV04DP-E
2 Electrical specifications
Figure 3. Current and voltage conventions
IN2
R
IN1
INPUT 1
I
R
IN2
IN2
INPUT 2
SOURCE 1
I
IN1
V
IN1
V
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 2. Absolute maximum ratings
DRAIN 1
DRAIN 2
SOURCE 2
I
D1
I
D2
V
DS1
V
DS1
Symbol Parameter Value Unit
V
V
I
R
IN MINn
I
I
V
ESD1
V
ESD2
P
T
DSn
INn
INn
Dn
Rn
tot
T
j
T
c
stg
Drain-Source Voltage (V
= 0 V) Internally clamped V
INn
Input voltage Internally clamped V
Input current +/- 20 mA
Minimum input series impedance 220 Ω
Drain current Internally limited A
Reverse DC output current -5.5 A
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF) 4000 V
Electrostatic discharge on output pins only (R = 330 Ω,
C=150pF)
Total dissipation at Tc=25°C 4 Ω
Operating junction temperature Internally limited °C
Case operating temperature Internally limited °C
Storage temperature -55 to 150 °C
6/21 Doc ID 018529 Rev 1
16500 V
VNS3NV04DP-E Electrical specifications
2.2 Thermal data
Table 3. Thermal data
Symbol Parameter Max value Unit
R
thj-lead
R
thj-amb
1. When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 μm thick) connected
to all DRAIN pins of the relative channel
Thermal resistance junction-lead (per channel) 30 °C/W
Thermal resistance junction-ambient 80
2.3 Electrical characteristics
Values specified in this section are for -40 °C < Tj< 150 °C, unless otherwise stated.
Table 4. Off
Symbol Parameter Test conditions Min Typ Max Unit
V
CLAMP
V
CLTH
V
INTH
I
ISS
V
INCL
I
DSS
Drain-source clamp
voltage
Drain-source clamp
threshold voltage
Input threshold
voltage
Supply current from
input pin
Input-source clamp
voltage
Zero input voltage
drain current
=0V)
(V
IN
V
=0V; ID= 1.5 A 40 45 55 V
IN
=0V; ID=2mA 36 V
V
IN
V
DS=VIN
V
DS
=1mA 6 6.8 8 V
I
IN
=-1mA -1 -0.3 V
I
IN
V
DS
V
DS
(1)
°C/W
; ID=1mA 0.5 2.5 V
=0V; VIN= 5 V 100 150 µA
=13V; VIN=0V; Tj=25°C 30 µA
=25V; VIN=0V 75 µA
Table 5. On
Symbol Parameter Test conditions Min Typ Max Unit
=5V; ID= 1.5 A; Tj= 25 °C — — 120 mΩ
V
R
DS(on)
Static drain-source on
resistance
IN
=5V; ID= 1.5 A — — 240 mΩ
V
IN
Tj= 25 °C, unless otherwise specified
Table 6. Dynamic
Symbol Parameter Test conditions Min Typ Max Unit
Forward
(1)
gfs
C
transconductance
Output capacitance VDS=13V; f=1MHz; VIN=0V — 150 — pF
OSS
Doc ID 018529 Rev 1 7/21
=13V; ID=1.5A — 5.0 — S
V
DD
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