The VND810PEP-E is a monolithic device made
using| STMicroelectronics VIPower M0-3
Technology. The VNQ810PEP-E is intended for
driving any type of multiple load with one side
connected to ground.
The Active V
device against low energy spikes (see ISO7637
transient compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects the
open load condition in both the on and off-state.
In the off-state the device detects if the output is
shorted to V
in the case where the ground pin becomes
disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInput
CC
FloatingXXXX
To groundX
Through 10KΩ
resistor
Doc ID 10872 Rev 75/28
Electrical specificationsVNQ810PEP-E
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
- V
- I
I
- I
I
V
E
T
CC
CC
GND
OUT
OUT
I
IN
STAT
ESD
MAX
P
tot
T
T
c
stg
DC supply voltage41V
Reverse DC supply voltage- 0.3V
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 6A
DC input current+/- 10mA
DC Status current+/- 10mA
Electrostatic discharge (human body model: R=1.5KΩ;
C = 100pF)
1. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35 µm thick). Horizontal
mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 8cm2 of Cu (at least 35 µm thick). Horizontal
mounting and no artificial air flow.
2.3 Electrical characteristics
Values specified in this section are for 8V < V
otherwise stated.
Figure 3.Current and voltage conventions
I
INn
V
INn
V
STATn
I
STATn
INPUTn
STATUSn
(1)
56
< 36V; -40°C < Tj < 150°C, unless
CC
V
(*)
F1
V
CC
I
OUTn
OUTPUTn
V
GND
42
OUTn
(2)
°C/W
I
S
V
CC
Note:V
Fn
= V
CCn
- V
during reverse battery condition.
OUTn
Doc ID 10872 Rev 77/28
I
GND
Electrical specificationsVNQ810PEP-E
Table 5.Power output
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
CC
V
USD
V
OV
R
ON
I
S
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Operating supply
voltage
5.51336V
Undervoltage shutdown345.5V
Overvoltage shutdown36V
20
20
8.5
160
120mΩmΩ
60
µA
40
µA
13.5
mA
5µA
3µA
On-state resistance
Supply current
Off-state output current V
Off-state output current V
Off-state output current
Off-state output current
I
= 1A; Tj = 25°C
OUT
= 1A; V
I
OUT
Off-state; V
= V
V
IN
OUT
Off-state; V
= V
V
IN
OUT
Tj = 25°C
On-state; V
= 0A
I
OUT
= V
IN
OUT
= 0V; V
IN
V
= V
IN
OUT
Tj = 125°C
V
= V
IN
OUT
Tj = 25°C
> 8V
CC
= 13V;
CC
= 0V
= 13V;
CC
= 0V;
= 13V; V
CC
IN
= 5V;
= 0V 050µA
= 3.5V -750µA
OUT
= 0V; V
= 0V; V
CC
CC
= 13V;
= 13V;
Table 6.Protections and diagnostics
SymbolParameterTest conditionsMin.Typ. Max.Unit
T
T
t
SDL
I
V
demag
Shutdown temperature150175200°C
TSD
T
Reset temperature135°C
R
Thermal hysteresis715°C
hyst
Status delay in overload
conditions
Current limitation
lim
Turn-off output clamp
voltage
> T
T
j
TSD
V
= 13V
CC
5.5V < V
I
= 1A; L = 6mH
OUT
CC
< 36V
57.51010A
V
-41V
CC
CC
Note:To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
-48V
20µs
A
-
CC
55
V
8/28 Doc ID 10872 Rev 7
VNQ810PEP-EElectrical specifications
Tabl e 7.VCC - output diode
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
F
Table 8.Switching (V
Forward on voltage- I
= 13V; Tj = 25°C)
CC
= 0.5A; Tj = 150°C--0.6V
OUT
SymbolParameterTest conditionsMin.Typ.Max. Unit
R
= 13Ω from VIN rising edge
t
d(on)
t
d(off)
Turn-on delay time
Turn-off delay time
L
to V
R
to V
= 1.3V (see Figure 5)
OUT
= 13Ω from VIN falling edge
L
= 11.7V
OUT
-30 -µs
-30 -µs
(see Figure 5)
dV
/dt
OUT
dV
OUT
Table 9.Logic inputs
Turn-on voltage slope
(on)
/dt
Turn-off voltage slope
(off)
= 13Ω from V
L
V
= 10.4V (see Figure 5)
OUT
= 13Ω from V
R
L
to V
= 1.3V (see Figure 5)
OUT
OUT
OUT
= 1.3V to
= 11.7V
-
-
See
Figure 10
See
Figure 12
-V/µs
-V/µs
R
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I
V
I
I(hyst)
Input low level1.25V
IL
Low level input currentV
IL
Input high level3.25V
IH
High level input currentV
IH
= 1.25V1µA
IN
= 3.25V10µA
IN
Input hysteresis voltage0.5V
I
Input clamp voltage
ICL
IN
I
IN
= 1mA
= -1mA
66.8
- 0.7
8V
V
Table 10.Status pin
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
V
Table 11.Openload detection
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
t
DOL(on)
Status low output voltageI
Status leakage currentNormal operation; V
Status pin input capacitance Normal operation; V
Status clamp voltage
SCL
Openload On-state detection thresholdV
OL
Openload On-state detection delayI
= 1.6mA0.5V
STAT
= 5V10µA
STAT
= 5V100pF
STAT
I
STAT
I
STAT
= 1mA
= - 1mA
= 5V 204080mA
IN
= 0A 200µs
OUT
66.8
- 0.7
8V
V
Doc ID 10872 Rev 79/28
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