ST VNQ600A User Manual

®
VNQ600A
QUAD CHAN NEL HIGH SIDE SOLID STATE RELAY
TYPE R
DS(on)
(*) I
lim
V
CC
VNQ600A 35m 25A 36 V
(*) Per each channel
DC SHORT CIRCUIT CURRENT: 25A
PROPORTIONAL LOAD CURRENT SENSE
UNDERVOLTAGE & OVERVOLTAGE
SHUT-DOWN
n
OVERVOLTAGE CLAMP
THERMAL SHUT-DOWN
CURRENT LIMITATION
VERY LOW STAND-BY POWER DISSIPATION
PROTECTION AGAINST:
LOSS OF GROUND & LOSS OF VCC
n
REVERSE BATTERY PROTECTION (**)
SO-28 VNQ600A VNQ600A13TR
package. The VND600 is a monolithic device designed in| STMicroelectronics VIPower M0-3 Technology. The VNQ600A is intended for driving any type of multiple loads with one side connected to ground. This device has four independent
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE TUBE T&R
channels and four analog sense outputs which deliver currents proportional to the outputs
DESCRIPTION
The VNQ600A is a quad HSD formed by assembling two VND600 chips in the same SO-28
currents. Active current limitation combined with thermal shut-down and automatic restart protect the device against overload . Device auto mati call y turns off in case of ground pin disconnection.
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
-V I
OUT
I
I
V
CSENSE
I
GND
V
ESD
E
MAX
P
T
T
Supply voltage ( continuous) 41 V
CC
Reverse supply voltage (continuous) -0.3 V
CC
Output current ( continuo us), for each channel 15 A Reverse output current (continu ous), for each channel -15 A
R
Input current +/- 10 mA
IN
Current sense maximum voltage Ground current at T
< 25°C (continuous) -200 mA
pins
-3
+15
Electro static Discharge ( Human Body M odel: R=1.5KΩ; C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
Maxim u m Sw itchin g En ergy (L=0.11m H ; R Power dissipation (per island) at T
tot
Junction operat ing temperature Internally Limited ° C
j
Storage temperature -55 to 150 °C
stg
=0; V
L
=13.5V ; T
bat
=150ºC ; IL=40A)
jstart
=25°C 6.25 W
lead
4000 2000 5000 5000
126 mJ
V V
V V V V
(**) See app lication sch em atic at page 9.
June 20 03 1/18
VNQ600A
BLOCK DIAGRAM
OVERVOLTAGE
UNDERVOLT AGE
1,2
V
CC
INPUT 1
INPUT 2
GND 1,2
INPUT 3
INPUT 4
GND 3,4
OVERTEMP. 1
OVERTEMP. 2
OVERTEMP. 3
OVERTEMP. 4
LOGIC
LOGIC
DRIVER 1
I
OUT1
DRIVER 2
I
OUT2
OVERVOLT AGE
UNDERVOLTAGE
DRIVER 3
I
OUT3
DRIVER 4
I
OUT4
DEMA G 1
I
LIM1
K
DEMAG 2
I
LIM2
K
DEMAG 3
I
LIM3
K
DEMAG 4
I
LIM4
K
OUTPUT 1
CURRENT SENSE 1
OUTPUT 2
CURRENT SENSE 2
3,4
V
CC
OUTPUT 3
CURRENT SENSE 3
OUTPUT 4
CURRENT SENSE 4
2/18
CURRENT AND VOLTAGE CO NVENTIONS
I
VNQ600A
S1,2
I
IN1
SENSE3
V
IN4
I
SENSE1
I
IN2
I
SENSE2
I
IN3
I
SENSE3
I
IN4
I
SENSE4
V
SENSE4
V
IN1
V
SENSE1
V
IN2
V
SENSE2
V
IN3
V
CONNECTION DIAGRAM ( TOP VIEW)
VCC1,2 GND 1,2 INPUT2 INPUT1 CURRENT
CURRENT SENS E 2 V
CC
V
CC
GND 3,4 INPUT4
INPUT3 CURRENT SE NSE 3 CURRENT SE NSE 4
V
CC
SENSE 1
1,2
3,4
3,4
V
CC1,2
INPUT1 CUR. SENSE1 INPUT2 CUR. SENSE2
INPUT3 CUR. SENSE3 INPUT4 CUR. SENSE4
GND
1,2
1
14 15
OUTPUT1
OUTPUT2
OUTPUT3
OUTPUT4
I
GND1,2
V
CC3,4
GND
V
CC3,4
V
CC1,2
I
S3,4
I
OUT1
I
OUT2
I
OUT3
V
OUT3
I
OUT4
V
OUT4
3,4
I
GND3,4
28
V
1,2
CC
V
OUT2
V
OUT1
OUTPUT 1 OUTPUT 1 OUTPUT 1
OUTPUT 2 OUTPUT 2 OUTPUT 2
OUTPUT 3 OUTPUT 3 OUTPUT 3 OUTPUT 4
OUTPUT 4 OUTPUT 4 V
3,4
CC
3/18
VNQ600A
THERMAL DATA (Per island)
Symbol Parameter Value Unit
R
thj-lead
R
thj-amb
R
thj-amb
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at leas t 35µ m thick) connected to all VCC pins.
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified) (Per each channel) POWER
Symbol Parame ter Test Conditions Min Typ Max Uni t
(**) Operating supply voltage 5.5 13 36 V
V
CC
(**) Undervoltage sh ut-down 3 4 5.5 V
V
USD
(**) Overvolta ge shut-down 36 V
V
OV
R
ON
V
clamp
I
(**) Supply cu rrent
S
I
L(off1)
I
L(off 2)
I
L(off 3)
I
L(off4)
Ther m al re si s ta nce Junction-lead 20 °C/W Thermal resistan ce Junction-ambient (one chip ON) 60 (*) °C/W Thermal resistan ce Junction-ambient (two chips ON ) 46 (*) °C/W
On state res istance
1,2,3,4=5A; Tj=25°C
I
OUT
I
1,2,3,4=5A; Tj=150°C
OUT
I
1,2,3,4=3A; V
OUT
CC
=6V
35 70
120
Clamp Volt age ICC=20mA (see note 1) 41 48 55 V
Off Stat e; V Off Stat e; V T
=25°C
j
On State; V
=3.9K
R
SENSE
Off state output current VIN=V
OUT
Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V
OUT OUT
=13V; VIN=V
CC
=13V; VIN=V
CC
OUT OUT
=0V =0V;
12
12
=13V; VIN=5V; I
CC
OUT
=0A;
=0V 0 50 µA
=3.5V -75 0 µA
OUT
=0V; Vcc=13V; Tj =125°C 5 µA =0V; Vcc=13V; Tj =25°C 3 µA
40
25
6
m m m
µA
µA
mA
SWITCHING (VCC=13V)
Symbol Parameter Test Conditions Min Typ Max Unit
t
D(on)
t
D(off)
/dt)onTurn-on voltage slope R1=2.6 channels 1,2,3,4 ( see fig. 1) 0.20 V/µs
(dV
OUT
/dt)
(dV
OUT
Turn-on del a y time R1=2.6 channels 1,2,3,4 ( see fig. 1) 40 µs Turn-off delay time R1=2.6 channels 1,2,3,4 (see fig. 1) 40 µs
Turn-off voltage slope R1=2.6 channels 1,2,3,4 ( see fig. 1) 0.20 V/µs
off
PROTECTIONS
Symbol Parameter Te st Conditions Mi n Typ Max Unit
I
lim
T
TSD
T
R
T
hyst
V
demag
V
ON
(**) Per island
=13V
V
DC Short circuit current
CC
5.5V<V
CC
<36V Thermal shut-down temper ature Thermal reset
temper ature Thermal hysteresis 7 15 °C Turn-off output voltage
clamp Output voltage dr op
limitation
I
=2A; L= 6m H VCC-41 VCC-48 VCC-55 V
OUT
=0.5A; Tj= -40°C.. .+150°C 50 mV
I
OUT
25 40 70
70
150 175 200 °C
135 °C
4/18
1
A A
VNQ600A
CURRENT SENSE (9V < V
< 16V) (See Fig. 3)
CC
Symbol Parameter Test Conditions Min Typ Max Unit
I
K
dK
1/K1
K
dK2/K
K
dK3/K
V
SENSE1,2
V
SENSEH
1
2
3
I
OUT/ISENSE
Current Sense Ratio Drift
I
OUT/ISENSE
Current Sense Ratio Drift
2
I
OUT/ISENSE
Current Sense Ratio Drift
3
Max analog sense output voltage
Analog sense output voltage in overtemperature condition
Analog Sense Output
R
VSENSEH
t
DSENSE
Impeda nce in Overtem peratur e Condition
Current sense delay response to 90% I
=0.35A ; V
OUT1,2
T
= -40°C. .. +150°C
j
I
or I
OUT1
V
SENSE
open; Tj= -40°C...150° C I
=2A; V
OUT
T
= 25°C...+150°C
j
or I
I
OUT1
other channels open; T
=-40°C...150°C
j
I
=4A; V
OUT
T
= 25°C...+150°C
j
or I
I
OUT1
=0.5A;
OUT2
=0.5V; other channels
SENSE
=5A; V
OUT2
SENSE
=15A; V
OUT2
other channels open;
=-40°C...150°C
T
j
=5.5V; I
V
CC
R
SENSE
V
CC
R
SENSE
VCC=13V; R
=10K
>8V; I
=10K
OUT1,2
OUT1,2
SENSE
VCC=13V; Tj>T open
(see note 2) 500 µs
SENSE
=0.5V;
SENSE
3300 4350 6000
-10 +10 %
=2.5V; Tj=-40°C
=4V;
SENSE
3900 4150
4850 4850
6000 5800
-6 +6 %
=4V; Tj=-40°C
=4V;
SENSE
4150 4400
4900 4900
6000 5750
-6 +6 %
=2A;
=4A;
2
4
=3.9K 5V
; All channels
TSD
400
V
V
LOGIC INPUT
Symbol Parameter Test Conditions Min Typ Max Unit
V
IL
V
IH
V
I(hyst)
I
IL
I
IH
V
ICL
Note 1: V
clamp
Note 2: current sense signal delay after pos itive input sl ope.
Note: Sense pin doesn’t have to be left float ing.
Low level input voltage 1.25 V High level input voltage 3.25 V Input hysteres is voltag e 0.5 V Low level input current VIN=1.25V 20 65 µA High level input current VIN=3.25V 75 110 µA
=1mA
I
Input clamp voltage
and VOV are correlated. Typical difference is 5V.
IN
I
= -1mA
IN
66.8
-0.7
8V
V
5/18
2
TRUTH TABLE (per channel)
CONDITIONS INPUT OUTPUT SENSE
Normal op eration
Overtemperature
Undervoltage
Overvoltage
Short circuit to GND
Short circuit to V Negative output voltage
clamp
CC
VNQ600A
L
H
L
H
L
H
L
H
L H H
L H
LL 0
L
H
L L L L L L L L L
(T
j<TTSD
(T
j>TTSD
H H
0
Nominal
0
V
SENSEH
0 0 0 0
0 ) 0 ) V
SENSEH
0
< Nomin a l
6/18
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