Quad channel high-side driver with analog current sense
Features
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open-load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
■ Suitable as relays driver
Description
The VNQ5E250AJ-E is a quad channel high-side
driver manufactured using ST proprietary
VIPower™ M0-5 technology and housed in
PowerSSO-16 package. The device is designed
to drive 12 V automotive grounded loads, and to
provide protection and diagnostics. It also
implements a 3 V and 5 V CMOS compatible
interface for the use with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with autorestart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel providing enhanced diagnostic
functions including fast detection of overload and
short-circuit to ground through power limitation
indication, overtemperature indication, shortcircuit to V
open-load detection. The current sensing and
diagnostic feedback of the whole device can be
disabled by pulling the CS_DIS pin high to share
the external sense resistor with similar devices.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
V
I
GND
I
OUT
-I
OUT
I
I
CSD
I
CSENSE
V
CSENSE
E
MAX
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output current
Reverse DC output current 5A
DC input current -1 to 10mA
IN
DC current sense disable input current -1 to 10mA
DC reverse CS pin current 200mA
Current sense maximum voltage
Maximum switching energy (single pulse)
(L = 36 mH; R
I
= I
limL
(Typ.))
OUT
=0Ω; V
L
=13.5V; T
bat
jstart
=150°C;
Internally
limited
VCC-41
+V
CC
39mJ
A
V
V
Doc ID 17360 Rev 27/37
Electrical specificationsVNQ5E250AJ-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (human body model: R=1.5KΩ; C=100pF)
Values specified in this section are for 8 V < VCC<28V, -40°C<Tj< 150 °C, unless
otherwise specified.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
clamp
I
L(off)
1. PowerMOS leakage included.
2. For each channel.
Operating supply voltage41328V
CC
Undervoltage shutdown3.54V
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS=20 mA414652V
I
Supply current
S
Off-state output current
Output - VCC diode
V
F
voltage
(2)
I
=0.5A; Tj=25°C250 mΩ
OUT
=0.5A; Tj= 150 °C500mΩ
I
OUT
I
= 0.5 A; VCC=5V; Tj=25°C300 mΩ
OUT
Off-state; V
VIN=V
=13V; Tj=25°C;
CC
OUT=VSENSE=VCSD
On-state; VCC=13V; VIN=5V;
=0A
I
OUT
(2)
VIN=V
Tj=25°C
V
IN=VOUT
=0V; VCC=13V;
OUT
=0V; VCC=13V;
Tj=125°C
-I
= 0.5 A; Tj= 150 °C0.7V
OUT
=0V
0.5V
(1)
(1)
5
2
µA
814mA
00.01 3 µA
05µA
Table 6.Switching (VCC=13V; Tj=25°C)
SymbolParameterTest conditionsMin.Typ.Max.Unit
Turn-on delay time RL=26Ω (see Figure 6)—10— µs
Turn-off delay time RL=26Ω (see Figure 6)—8 — µs
/dt)onTurn-on voltage slope RL=26Ω—0.8 —V/µs
/dt)
Turn-off voltage slope RL=26Ω—1 —V/µs
off
Switching energy
losses during t
won
Switching energy
losses during t
woff
RL=26Ω (see Figure 6)—16— µJ
RL=26Ω (see Figure 6)—12— µJ
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Doc ID 17360 Rev 29/37
Electrical specificationsVNQ5E250AJ-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
Input low level voltage0.9V
IL
Low level input currentVIN=0.9V1µA
I
IL
Input high level voltage2.1V
V
IH
I
High level input currentVIN=2.1V10µA
IH
V
I(hyst)
V
V
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
Input hysteresis voltage0.25V
I
=1mA5.57V
Input clamp voltage
ICL
CS_DIS low level voltage0.9V
CSDL
Low level CS_DIS currentV
IN
I
=-1mA-0.7V
IN
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
I
=1mA5.57V
CS_DIS clamp voltage
CSCL
CSD
=-1mA-0.7V
I
CSD
Table 8.Protections and diagnostics
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
=13V3.557A
I
limH
I
limL
T
TSD
T
T
RS
T
HYST
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
Reset temperature
R
Thermal reset of
STATUS
Thermal hysteresis
(T
TSD-TR
)
Turn-off output voltage
clamp
Output voltage drop
limitation
CC
4.5 V < V
=13V; TR<Tj<T
V
CC
I
OUT
<28V7A
CC
= 0.5 A; VIN=0;
L=20mH
= 0.015;
I
OUT
Tj= -40 °C...150 °C
(see Figure 8)
TSD
1.25A
TRS + 1
TRS + 5
135°C
7°C
VCC-41
VCC-46 VCC-52
25mV
°C
V
10/37Doc ID 17360 Rev 2
VNQ5E250AJ-EElectrical specifications
Table 9.Current sense (8 V < VCC<18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
K
K
dK
1/K1
K
dK
2/K2
K
dK
3/K3
I
SENSE0
I
0
OUT/ISENSE
I
1
OUT/ISENSE
(1)
Current sense ratio drift
I
2
OUT/ISENSE
(1)
Current sense ratio drift
I
3
OUT/ISENSE
(1)
Current sense ratio drift
Analog sense leakage
current
= 0.025 A;V
OUT
Tj= -40 °C...150 °C295500705
I
= 0.25 A;V
OUT
SENSE
Tj= -40 °C...150 °C
=25°C...150°C
T
j
I
= 0.25 A;V
OUT
= -40 °C...150 °C
T
j
I
=0.5A;V
OUT
= -40 °C...150 °C
T
j
=25°C...150°C
T
j
I
= 0.5 A; V
OUT
= -40 °C...150 °C
T
j
I
=1A; V
OUT
= -40 °C...150 °C
T
j
=25°C...150°C
T
j
I
=1A; V
OUT
= -40 °C...150 °C
T
j
=0A; V
I
OUT
V
=5V; VIN=0V;
CSD
= -40 °C...150 °C
T
j
V
=0V; VIN=5V;
CSD
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
Tj= -40 °C...150 °C
SENSE
=4V
=4V
=0V;
=0.5V
=0.5V
=4V
=4V
=4V
360
470
595
395
470
568
-9+9%
425
485
555
445
485
540
-6+6%
465
500
535
475
500
525
-4+4%
01µA
02µA
I
OL
V
SENSE
V
SENSEH
I
SENSEH
t
DSENSE1H
Openload ON-state
current
detectionthreshold
Max analog sense
output voltage
Analog sense output
voltage in fault
condition
Analog sense output
current in fault
condition
(2)
(2)
Delay response time
from falling edge of
CS_DIS pin
I
= 0.5 A; V
OUT
V
=5V; VIN=5V;
CSD
SENSE
Tj= -40 °C...150 °C
IN = 5V; 8V<V
V
= 5 µA
I
SENSE
I
= 0.5 A; V
OUT
R
SENSE
=10KΩ
VCC= 13 V; R
= 5 V; R
V
CC
VCC=13V; V
=5V; V
V
CC
V
SENSE
<4V;
0.025 A <I
SENSE
OUT
CC
CSD
SENSE
SENSE
SENSE
<1A;
4.5 V < VCC<18V;
I
=90% of I
SENSE
SENSE max
(see Figure 4)
=0V;
01µA
<18V;
=0V;
0.55mA
5V
= 3.9 KΩ8
= 3.9 KΩ4.5
=5V9
=3.5V6
40100µs
V
mA
Doc ID 17360 Rev 211/37
Electrical specificationsVNQ5E250AJ-E
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
t
DSENSE1L
Delay response time
from rising edge of
CS_DIS pin
V
0.025 A < I
4.5 V < VCC<18V;
I
SENSE
SENSE
<4V;
OUT
=10 % of I
<1A;
520µs
SENSE max
(see Figure 4)
t
DSENSE2H
Delay response time
from rising edge of
INPUT pin
V
0.025A < I
4.5 V < V
I
SENSE
SENSE
<4V;
<1A;
OUT
<18V;
CC
=90% of I
50200µs
SENSE max
(see Figure 4)
<4V;
SENSE
=90% of I
=90% of I
= 1.5 A (see Figure 7)
<4V;
SENSE
OUT
=10% of I
SENSEMAX
OUTMAX
<1A;
SENSE max
;
15150µs
Δt
DSENSE2H
t
DSENSE2L
Delay response time
between rising edge of
output current and rising
edge of current sense
Delay response time
from falling edge of
INPUT pin
V
I
SENSE
4.5 V < VCC<18V;
I
OUT
I
OUTMAX
V
0.025A < I
4.5 V < VCC<18V;
I
SENSE
(see Figure 4)
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open load OFF-state detection.
Table 10.Open-load detection (8 V < VCC<18V)
110µs
SymbolParameterTest conditionsMin.Typ. Max. Unit
t
DSTKON
I
L(off2)
td_vol
V
Open-load off-state voltage
OL
detection threshold
Output short circuit to VCC
detection delay at turn-off
Off-state output current at
= 4 V
V
OUT
Delay response from output
rising edge to V
SENSE
edge in open-load
V
= 0V; 4.5V<VCC<18V 2-4V
IN
See Figure 5180-1200µs
rising
=0V; V
V
IN
rising from 0 V to 4 V
V
OUT
V
= 4 V; VIN= 0 V
OUT
V
SENSE
= 90 % of V
SENSE
=0V
SENSEH
-120-0µA
-20µs
12/37Doc ID 17360 Rev 2
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