Quad channel high side driver for automotive applications
Max transient supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
■ Diagnostic functions
– Open Drain status output
– On-state open load detection
– Off-state open load detection
– Output short to V
– Overload and short to ground (power
– Undervoltage shut-down
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Over temperature shutdown with auto
restart (thermal shutdown)
– Reverse battery protected (see Application
schematic on page 22)
– Electrostatic discharge protection
detection
CC
CC
CC
ON
LIMH
S
41V
4.5 to 28V
160 mΩ
10 A
(1)
2 µA
PowerSSO-24
Application
■ All types of resistive, inductive and capacitive
loads
Description
The VNQ5E160K-E is a quad channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-24 package.
The VNQ5E160K-E is designed to drive automotive
grounded loads delivering protection, diagnostics
and easy 3V and 5V CMOS-compatible interface
with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over temperature shut-off with auto
restart and over-voltage active clamp.
A dedicated active low digital status pin is
associated with every output channel in order to
provide Enhanced diagnostic functions including
fast detection of overload and short-circuit to
ground, over temperature indication, short-circuit
to V
diagnosis and ON & OFF-state open-load
CC
detection.
The diagnostic feedback of the whole device can
be disabled by pulling the STAT_DIS pin up, thus
allowing wired-ORing with other similar devices.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
- V
- I
GND
I
OUT
- I
OUT
I
IN
I
STAT
I
STAT_DIS
E
MAX
DC supply voltage41V
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current 6A
DC input current+10 / -1mA
DC status current+10 / -1mA
DC status disable current+10 / -1mA
Maximum switching energy (single pulse)
(L= 8 mH; RL=0Ω; V
= I
limL
(Typ.))
I
OUT
INPUTn
=13.5 V; T
bat
GND
jstart
OUTPUTnSTAT_DIS
STATUSn
I
GND
=150 °C;
I
OUTn
I
STATn
V
STATn
V
OUTn
36mJ
Doc ID 14471 Rev 37/34
Electrical specificationsVNQ5E160K-E
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
Electrostatic discharge (Human Body Model: R=1.5KΩ;
C=100pF)
V
V
T
ESD
ESD
T
j
stg
– Input
– Status
–STAT_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
Storage temperature- 55 to 150°C
4000
4000
4000
5000
5000
V
V
V
V
V
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (max)
(with one channel on)
Values specified in this section are for 8V<VCC<28V; -40°C< Tj <150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
clamp
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Operating supply voltage4.51328V
CC
Undervoltage shut-down3.54.5V
USD
Undervoltage shut-down
hysteresis
I
=1A; Tj=25°C
OUT
=1A; Tj=150°C
I
OUT
=1A; VCC=5V; Tj=25°C
I
OUT
On-state resistance
ON
(1)
Clamp voltageIS = 20 mA414652V
I
Supply current
S
Off-state output current
Output - VCC diode
V
F
voltage
(1)
Off-state; V
=25°C
T
j
On-state; VIN=5V; VCC=13V;
=0A
I
OUT
VIN=V
(1)
OUT
V
IN=VOUT
-I
=0.6A; Tj=150°C0.7V
OUT
=13V; VIN=V
CC
OUT
=0V;
=0V; VCC=13V; Tj=25°C
=0V; VCC=13V; Tj=125°C
000.0135µA
0.5V
160
mΩ
320
mΩ
210
mΩ
(2)
8
(2)
5
14µAmA
2
µA
Table 6.Switching (VCC=13V; Tj= 25°C)
SymbolParameterTest conditionsMin.Typ.Max.Unit
t
d(on)
t
d(off)
/dt
dV
OUT
dV
/dt
OUT
W
ON
W
OFF
Table 7.Status pin (VSD=0)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
STAT
I
LSTAT
Turn-on delay time RL= 13Ω (see Figure 6.)15µs
Turn-off delay time RL= 13Ω (see Figure 6.)15µs
Turn-on voltage
(on)
slope
Turn-off voltage
(off)
slope
Switching energy
losses during
Switching energy
losses during t
Status low output
voltage
Status leakage current
= 13Ω
R
L
= 13Ω
R
L
t
RL= 13Ω (see Figure 6.)0.05mJ
won
RL= 13Ω (see Figure 6.)0.03mJ
woff
= 1.6 mA, VSD=0V0.5V
I
STAT
Normal operation or V
V
= 5V
STAT
SD
=5V,
See
Figure 26.
See
Figure 28.
V/µs
V/µs
10µA
Doc ID 14471 Rev 39/34
Electrical specificationsVNQ5E160K-E
Table 7.Status pin (VSD=0)
SymbolParameterTest conditionsMin.Typ.Max.Unit
C
STAT
V
Table 8.Protection
Status pin input
capacitance
Status clamp voltage
SCL
(1)
Normal operation or VSD=5V,
V
= 5V
STAT
I
= 1mA
STAT
= -1mA
I
STAT
5.5
100pF
7V
-0.7
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
T
T
T
HYST
t
SDL
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit
current
Short circuit current
during thermal cycling
Shutdown
TSD
temperature
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of
RS
STATUS
V
=13V; 5V<VCC<28V
CC
V
=13V; TR<Tj<T
CC
TSD
Thermal hysteresis
TSD-TR
)
T
I
OUT
I
OUT
T
(see Figure 4.)20µs
j>TTSD
=1A; VIN=0; L=20mHVCC-41VCC-46 VCC-52V
=0.03A (see Figure 5.)
= -40°C...+150°C
j
(T
Status delay in
overload conditions
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
7101414A
2.5A
150175200°C
135°C
7°C
25mV
V
A
Table 9.Openload detection (8V<VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
t
DOL(on)
t
POL
V
t
DSTKON
10/34 Doc ID 14471 Rev 3
Openload on-state
OL
detection threshold
Openload on-state
detection delay
Delay between INPUT
falling edge and
STATUS rising edge in
Openload condition
Openload off-state
voltage detection
OL
threshold
Output short circuit to
detection delay at
V
cc
turn-off
= 5V1040mA
V
IN
I
OUT
(see Figure 4.)
I
OUT
VIN = 0V24V
See Figure 4.180t
= 0A, VCC=13V
200µs
= 0A (see Figure 4.)2005001200µs
POL
µs
VNQ5E160K-EElectrical specifications
Table 9.Openload detection (8V<VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
L(off2)
Off-state output
(1)
current
VIN= 0V; V
(see Section 3.4: Open-load
detection in off-state)
OUT
= 4V
-750µA
Delay response from
td_vol
output rising edge to
STATUS falling edge in
V
IN
= 0V; V
= 4V20µs
OUT
open load
1. For each channel.
Table 10.Logic input
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
V
I
SDL
V
I
SDH
V
SD(hyst)
V
SDCL
Input low level0.9V
IL
Low level input currentVIN = 0.9V1µA
I
IL
Input high level2.1V
IH
High level input currentVIN = 2.1V10µA
I
IH
Input hysteresis voltage0.25V
I
= 1mA
Input clamp voltage
ICL
STAT_DIS low level voltage0.9V
SDL
IN
= -1mA
I
IN
5.5
-0.7
Low level STAT_DIS currentVSD=0.9V1µA
STAT_DIS high level voltage2.1V
SDH
High level STAT_DIS currentVSD=2.1V10µA
STAT_DIS hysteresis voltage0.25V
STAT_DIS clamp voltage
ISD=1mA
=-1mA
I
SD
5.5
-0.7
7V
7V
V
V
Doc ID 14471 Rev 311/34
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