Quad channel high side driver with analog current sense
Features
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off state openload detection
– Output short to Vcc detection
– Thermal shutdown indication
– Overload and short to ground (power
limitation) indication
■ Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Over-temperature shutdown with
autorestart (thermal shutdown)
– Reverse battery protected (see Figure 32)
CC
CC
ON
LIMH
S
4.5 to 28 V
160 mΩ
2 µA
41V
10 A
(1)
VNQ5E160AK-E
for automotive applications
PowerSSO-24
– Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VNQ5E160AK-E is a double channel highside driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-24 package. The VNQ5E160AK-E is
designed to drive 12V automotive grounded loads
delivering protection, diagnostics and easy 3V
and 5V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over-temperature shut-off with
auto-restart and over-voltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
Ehnanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication, overtemperature indication, short-circuit to Vcc
diagnosis and on & off state open load detection.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Thermal resistance junction-case (max)
(with one channel ON)
Thermal resistance junction-ambient (max)
8°C/W
See Figure 36. in the
thermal section
°C/W
8/37
VNQ5E160AK-EElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8V<VCC<28V, -40°C< Tj <150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
USDhyst
R
V
clamp
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
I
= 1A; Tj= 25°C160
OUT
On state resistance
ON
(2)
= 1A; Tj= 150°C320
OUT
I
= 1A; VCC= 5V; Tj= 25°C210
OUT
Clamp voltageIS= 20 mA414652V
Off State; V
VIN=V
I
S
I
L(off1)
Supply current
Off state output current
(2)
OUT=VSENSE=VCSD
On State; V
I
= 0A
OUT
VIN=V
= 0 V; VCC= 13 V;
OUT
Tj= 25°C
V
IN=VOUT
= 0 V; VCC= 13 V;
Tj= 125 °C
V
1. PowerMOS leakage included.
2. For each channel.
Table 6.Switching (VCC=13V; Tj= 25°C)
Output - VCC diode
F
voltage
(2)
-I
=1A; Tj=150°C0.7V
OUT
= 13 V; Tj= 25°C;
CC
= 13V; VIN= 5 V;
CC
= 0 V
0.5V
mΩI
(1)
2
(1)
5
µA
814mA
00.01 3
µA
05
SymbolParameterTest conditionsMin.Typ.Max.Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Turn-on delay time RL= 13 Ω (see Figure 6.)20 µs
Turn-off delay time RL= 13 Ω (see Figure 6.)10 µs
/dt)onTurn-on voltage slope RL= 13 Ω
/dt)
Turn-off voltage slope RL= 13 Ω
off
Switching energy
losses during t
won
Switching energy
losses during t
woff
RL= 13 Ω (see Figure 6.)0.05 mJ
RL= 13 Ω (see Figure 6.)0.03 mJ
See
Figure 26.
See
Figure 28.
9/37
V/µs
V/µs
Electrical specificationsVNQ5E160AK-E
Table 7.Logic Inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
IL
V
I
IH
V
I(hyst)
V
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
IL
Low level input currentVIN= 0.9V1µA
Input high level voltage2.1V
IH
High level input currentVIN= 2.1V10µA
Input hysteresis voltage0.25V
Input clamp voltage
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
CS_DIS high level voltage2.1V
High level CS_DIS currentV
CS_DIS hysteresis voltage0.25V
CS_DIS clamp voltage
IIN= 1mA5.57
= -1mA-0.7
I
IN
= 0.9V1µA
CSD
= 2.1V10µA
CSD
I
= 1mA5.57
CSD
= -1mA-0.7
I
CSD
(1)
V
V
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
TSD
T
T
RS
T
HYST
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
Reset temperature
R
Thermal reset of
STATUS
Thermal hysteresis
(T
Turn-off output voltage
clamp
TSD-TR
)
I
OUT
Output voltage drop
limitation
VCC= 13V
CC
<28V
5V<V
V
= 13V; TR<Tj<T
CC
= 1A; VIN= 0; L= 20mH
I
= 0.03A;
OUT
= -40°C...150°C
T
j
(see Figure 8.)
TSD
7101414A
2.5A
TRS + 1
TRS + 5
135°C
7°C
VCC-41
VCC-46VCC-52
25mV
A
°C
V
10/37
VNQ5E160AK-EElectrical specifications
Table 9.Current sense (8V<VCC<18V)
SymbolParameterTest conditionsMin.Typ. Max. Unit
I
= 0.025 A;
OUT
dK
dK
K
K
1/K1
K
2/K2
I
0
1
2
OUT/ISENSE
I
OUT/ISENSE
(1)
Current sense ratio drift
I
OUT/ISENSE
(1)
Current sense ratio drift
V
T
I
V
T
Tj= 25°C...150°C
I
V
T
I
V
T
T
I
V
= 0.5 V; V
SENSE
= -40°C...150°C330600870
j
= 0.35A;
OUT
= 0.5 V; V
SENSE
= -40°C...150°C
j
= 0.35 A;
OUT
= 0.5 V; V
SENSE
= -40°C...150°C
j
= 0.5A;
OUT
=4V; V
SENSE
=-40°C...150°C
j
= 25°C...150°C
j
= 0.5 A;
OUT
= 4 V; V
SENSE
CSD
CSD
CSD
CSD
CSD
= 0 V;
= 0 V;
= 0 V;
= 0 V;
= 0 V;
345
475
395
475
- 1212%
375
470
415
470
- 88%
Tj= -40°C...150°C
600
555
565
525
K
dK
3/K3
I
SENSE0
I
OL
V
SENSE
I
3
OUT/ISENSE
(1)
Current sense ratio drift
Analog sense leakage
current
Openload on state
current detection
threshold
Max analog sense
output voltage
I
= 1.5 A;
OUT
V
T
T
I
V
= 4 V; V
SENSE
= -40°C...150°C
j
= 25°C...150°C
j
= 1.5 A;
OUT
= 4 V; V
SENSE
Tj= -40°C...150°C
= 0 A; V
I
OUT
V
CSD
= -40°C...150°C
T
j
I
= 0 A; V
OUT
V
CSD
= -40°C...150°C
T
j
I
= 1A; V
OUT
V
CSD
SENSE
= 5 V; VIN= 0 V;
SENSE
= 0 V; VIN= 5 V;
SENSE
= 5V; VIN= 5V;
Tj= -40°C...150°C
VIN = 5V,
I
= 5 µA
SENSE
I
= 1.5 A; V
OUT
CSD
= 0 V;
CSD
425
465
505
435
465
495
CSD
= 0 V;
- 66%
= 0 V;
01
= 0 V;
02
= 0V;
01
15mA
= 0 V 5V
µA
V
SENSEH
Analog sense output
voltage in fault
condition
(2)
VCC= 13 V; R
= 3.9 KΩ;8V
SENSE
11/37
Electrical specificationsVNQ5E160AK-E
Table 9.Current sense (8V<VCC<18V) (continued)
SymbolParameterTest conditionsMin.Typ. Max. Unit
Analog sense output
I
t
(2)
SENSEH
DSENSE1H
current in fault
condition
(2)
Delay response time
from falling edge of
CS_DIS pin
VCC= 13V; V
V
I
<4V, 0.025A<Iout<1.5A
SENSE
=90% of I
SENSE
(see Figure 4)
= 5 V;9mA
SENSE
SENSEMAX
40100µs
Delay response time
t
DSENSE1L
from rising edge of
CS_DIS pin
Delay response time
t
DSENSE2H
from rising edge of
INPUT pin
Delay response time
Δt
DSENSE2H
between rising edge of
output current and rising
edge of current sense
Delay response time
t
DSENSE2L
from falling edge of
INPUT pin
1. Parameter guaranteed by design; it is not tested
2. Fault condition includes: power limitation, overtemperature and open load off state detection.
Table 10.Openload detection (8V<VCC<18V)
V
I
(see Figure 4)
V
I
(see Figure 4.)
V
I
I
I
V
I
(see Figure 4.)
<4V, 0.025A<Iout<1.5A
SENSE
=10% of I
SENSE
<4V, 0.025A<Iout<1.5A
SENSE
=90% of I
SENSE
<4V,
SENSE
= 90% of I
SENSE
= 90% of I
OUT
OUTMAX
SENSE
=1.5A (see Figure 7)
<4V, 0.025A<Iout<1.5A
SENSE
=10% of I
SENSEMAX
SENSEMAX
SENSEMAX,
OUTMAX
SENSEMAX
520µs
120300µs
110µs
80 250 µs
SymbolParameterTest conditionsMin.Typ.Max.Unit
Openload off state
V
OL
voltage detection
24V
threshold
Output short circuit to
t
DSTKON
detection delay at
V
CC
See Figure 5.1801200µs
turn off
I
L(off2)r
I
L(off2)f
Off state output current
at V
OUT
= 4V
Off state output current
at V
OUT
= 2V
= 0 V; V
V
IN
rising from 0 V to 4 V
V
OUT
= 0 V; V
V
IN
V
falling from VCC to 2V
OUT
SENSE
SENSE
= 0 V
= V
SENSEH
-1200µA
-5090µA
Delay response from
= 4 V; VIN= 0 V
td_vol
output rising edge to
SENSE
rising edge in
V
openload
V
OUT
V
SENSE
= 90% of V
SENSEH
20µs
12/37
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