Quad channel high-side driver with analog current sense
for automotive applications
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
CC
CC
ON
LIMH
S
4.5 to 28V
– Inrush current active management by
power limitation
– Very low standby current
– 3.0V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Overtemperature shutdown with auto
restart (thermal shutdown)
– Reverse battery protected (see
Figure 29: Application schematic)
41V
50 mΩ
27 A
(1)
2 µA
PowerSSO-24
– Electrostatic discharge protection
Applications
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VNQ5E050MK-E is a quad channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-24 package. The VNQ5E050MK-E is
designed to drive 12V automotive grounded loads
delivering protection, diagnostics and easy 3V
and 5V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and over-voltage active clamp.
A dedicated analog current sense pin is
associated with every output channel in order to
provide Enhanced diagnostic functions including
fast detection of overload and short-circuit to
ground through power limitation indication and
overtemperature indication.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions reported in this section for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
-V
- I
GND
I
OUT
- I
OUT
I
IN
I
CSD
-I
CSENSE
V
CSENSE
E
MAX
DC supply voltage 41V
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current 20A
DC input current-1 to 10mA
DC current sense disable input current-1 to 10mA
DC reverse CS pin current200mA
Current sense maximum voltage
Maximum switching energy (single pulse)
(L= 3mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.))
V
- 41 to
CC
+V
CC
104mJ
V
Doc ID 16374 Rev 17/36
Electrical specificationsVNQ5E050MK-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(Human Body Model: R=1.5KΩ; C=100pF)
4000
2000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
T
stg
– INPUT
– CURRENT SENSE
–CS_DIS
–OUTPUT
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)2.8°C/W
Values specified in this section are for 8V<VCC<28V, -40°C< Tj <150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max.Unit
V
V
V
USDhyst
R
V
clamp
I
L(off)
1. For each channel.
2. PowerMOS leakage included.
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS= 20 mA414652V
I
Supply current
S
Off-state output current
Output - VCC diode
V
F
voltage
(1)
(1)
I
= 2A; Tj= 25°C
OUT
= 2A; Tj= 150°C
I
OUT
I
= 2A; VCC= 5V; Tj= 25°C
OUT
Off-state; V
V
IN=VOUT=VSENSE=VCSD
=13V; Tj=25°C;
CC
On-state; VCC=13V; VIN=5V;
=0A
I
OUT
(1)
VIN=V
Tj=25°C
V
IN=VOUT
=0V; VCC=13V;
OUT
=0V; VCC=13V;
Tj=125°C
-I
=2A; Tj=150°C0.7V
OUT
=0V
0.5V
50
100
65
(2)
2
5
8
14µAmA
000.013
mΩ
mΩ
mΩ
(2 )
µA
5
Table 6.Switching (VCC=13V; Tj= 25°C)
SymbolParameterTest conditionsMin.Typ.Max.Unit
Turn-on delay time RL= 6.5Ω (see Figure 5)20µs
Turn-off delay time RL= 6.5Ω (see Figure 5)35µs
/dt)onTurn-on voltage slope RL= 6.5Ω
/dt)
Turn-off voltage slope RL= 6.5Ω
off
Switching energy
losses during t
won
Switching energy
losses during t
woff
RL= 6.5Ω (see Figure 5)0.15mJ
RL= 6.5Ω (see Figure 5)0.25mJ
See
Figure 23
See
Figure 25
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Doc ID 16374 Rev 19/36
V/µs
V/µs
Electrical specificationsVNQ5E050MK-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
IL
Low level input currentVIN= 0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN= 2.1V10µA
IH
Input hysteresis voltage0.25V
Input clamp voltage
ICL
I
= 1mA
IN
= -1mA
I
IN
5.5
-0.7
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
= 0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
= 2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
CS_DIS clamp voltage
I
CSD
I
CSD
= 1mA
= -1mA
(1)
5.5
-0.7
7V
7V
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
TSD
T
T
T
HYST
V
DEMAG
=13V
DC short circuit
current
Short circuit current
during thermal cycling
V
CC
5V<V
V
<28V
CC
= 13V; TR<Tj<T
CC
TSD
Shutdown
temperature
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of
RS
STATUS
Thermal hysteresis
(T
Turn-off output voltage
clamp
TSD-TR
)
I
= 2A; VIN= 0; L= 6mHVCC-41VCC-46 VCC-52V
OUT
192738
38
7A
150175200°C
135°C
7°C
V
V
A
A
I
= 0.1A;
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
OUT
= -40°C...150°C
T
j
(see Figure 6)
10/36Doc ID 16374 Rev 1
25mV
VNQ5E050MK-EElectrical specifications
Table 9.Current sense (8V<VCC<18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
= 0.05A;
OUT
K
K
0
1
I
OUT/ISENSE
I
OUT/ISENSE
V
T
I
V
T
=0.5V; V
SENSE
= -40°C...150°C
j
=1A;
OUT
= 4V; V
SENSE
= -40°C...150°C
j
Tj= 25°C...150°C
CSD
CSD
=0V;
=0V;
1050 2110 3170
1510
1890
2650
1510
1890
2270
dK
1/K1
K
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
V
SENSE
V
SENSEH
I
SENSEH
Current sense ratio
(1)
drift
I
2
OUT/ISENSE
Current sense ratio
(1)
drift
I
3
OUT/ISENSE
Current sense ratio
(1)
drift
Analog sense
leakage current
Open load on-state
current detection
threshold
Max analog sense
output voltage
Analog sense output
voltage in fault
condition
Analog sense output
current in fault
condition
(2)
(2)
=1A; V
I
OUT
V
=0V;
CSD
=-40 °C to 150 °C
T
J
I
=2A;
OUT
V
T
T
I
V
= 4V; V
SENSE
= -40°C...150°C
j
= 25°C...150°C
j
=2A; V
OUT
= 0V;
CSD
SENSE
CSD
SENSE
= 4V;
=0V;
= 4V;
TJ=-40 °C to 150 °C
I
=4A;
OUT
V
T
T
I
V
= 4V; V
SENSE
= -40°C...150°C
j
= 25°C...150°C
j
= 4A; V
OUT
CSD
SENSE
= 0V;
CSD
= 0V;
= 4V;
TJ=-40 °C to 150 °C
I
= 0A; V
OUT
V
= 5V; VIN=0V; Tj= -40°C...150°C
CSD
= 0V; VIN=5V; Tj= -40°C...150°C
V
CSD
= 2A; V
I
OUT
= 5V; VIN=5V; Tj= -40°C...150°C
V
CSD
SENSE
SENSE
=0V;
=0V;
VIN = 5V, 8V<VCC<18V
= 5 µA
I
SENSE
= 4A; V
I
OUT
VCC= 13V; R
VCC= 13V; V
= 0V 5V
CSD
= 10KΩ8V
SENSE
= 5V9mA
SENSE
-1313%
1600
1800
2230
1600
1800
2000
-88%
1620
1770
1990
1620
1770
1920
-66%
0
0
0
1
µA
2
µA
1
µA
420mA
Doc ID 16374 Rev 111/36
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