Quad channel high-side driver with analog current sense
for automotive applications
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.) R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliance with European directive
2002/95/EC
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open-load detection
– Output short to V
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VNQ5E050AK-E is a quad channel high-side
driver manufactured using ST proprietary
VIPower™ M0-5 technology and housed in
PowerSSO-24 package. The device is designed
to drive 12 V automotive grounded loads, and to
provide protection and diagnostics. It also
implements a 3 V and 5 V CMOS compatible
interface for the use with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp.
A dedicated analog current sense pin is
associated with every output channel providing
enhanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication,
overtemperature indication, short-circuit to V
diagnosis and on-state and off-state open-load
detection. The current sensing and diagnostic
feedback of the whole device can be disabled by
pulling the CS_DIS pin high to share external
sense resistor with similar devices.
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to the conditions reported in this section for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
-V
-I
GND
I
OUT
-I
OUT
I
IN
I
CSD
-I
CSENSE
V
CSENSE
DC supply voltage 41V
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current 20A
DC input current-1 to 10mA
DC current sense disable input current-1 to 10mA
DC reverse CS pin current200mA
Current sense maximum voltage
V
- 41 to
CC
+V
CC
V
Doc ID 13519 Rev 67/37
Electrical specificationsVNQ5E050AK-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy (single pulse)
E
MAX
(L = 3 mH; R
I
OUT=IlimL
=0Ω; V
L
(Typ.))
=13.5V; T
bat
jstart
=150°C;
104mJ
Electrostatic discharge
(human body model: R = 1.5 KΩ; C=100pF)
4000
2000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
T
stg
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)2.8°C/W
Values specified in this section are for 8 V < VCC<28V, -40°C< Tj< 150 °C, unless
otherwise stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
Operating supply voltage4.51328V
CC
Undervoltage shutdown2.53.54.5V
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS=20mA414652V
clamp
(1)
I
=2A; Tj=25°C50
OUT
=2A; Tj= 150 °C100
OUT
=2A; VCC=5V; Tj=25°C65
I
OUT
0.5V
mΩI
8/37 Doc ID 13519 Rev 6
VNQ5E050AK-EElectrical specifications
Table 5.Power section (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Off-state; V
V
I
S
Supply current
IN=VOUT=VSENSE=VCSD
On-state; VCC=13V; VIN=5V;
I
=0A
OUT
VIN=V
Tj=25°C
I
L(off)
1. For each channel
2. PowerMOS leakage included.
Table 6.Switching (VCC=13V; Tj=25°C)
Off-state output current
Output - VCC diode
V
F
voltage
(1)
(1)
V
IN=VOUT
= 125 °C
T
j
-I
=2A; Tj= 150 °C0.7V
OUT
=13V; Tj=25°C;
CC
=0V; VCC=13V;
OUT
=0V; VCC=13V;
=0V
(2)5(2)
2
814mA
00.01 3
05
SymbolParameterTest conditionsMin.Typ.Max.Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
Turn-on delay time RL=6.5Ω (see Figure 6.)20 µs
Turn-off delay time RL=6.5Ω (see Figure 6.)35 µs
/dt)onTurn-on voltage slope RL=6.5Ω
/dt)
Turn-off voltage slope RL=6.5Ω
off
See
Figure 26
See
Figure 28
µA
µA
V/µs
V/µs
W
W
ON
OFF
Switching energy
losses during t
won
Switching energy
losses during
t
woff
RL=6.5Ω (see Figure 6.)0.15 mJ
RL=6.5Ω (see Figure 6.)0.25 mJ
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
V
I(hyst)
V
V
I
CSDL
V
CSDH
CSDL
Input low level voltage0.9V
IL
Low level input currentVIN=0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN=2.1V10µA
IH
Input hysteresis voltage0.25V
I
=1mA5.57
Input clamp voltage
ICL
IN
=-1mA-0.7
I
IN
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
V
Doc ID 13519 Rev 69/37
Electrical specificationsVNQ5E050AK-E
Table 7.Logic inputs (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
I
=1mA5.57
CS_DIS clamp voltage
CSD
=-1mA-0.7
I
CSD
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
TSD
T
T
T
HYST
V
DEMAG
DC short circuit
current
Short circuit current
during thermal cycling
Shutdown
temperature
Reset temperatureTRS + 1TRS + 5°C
R
Thermal reset of
RS
STATUS
Thermal hysteresis
TSD-TR
)
(T
Turn-off output voltage
clamp
VCC= 13 V192738A
5V<V
V
CC
<28V38A
CC
=13V; TR<Tj<T
TSD
7A
150175200°C
135°C
7°C
I
=2A; VIN=0;
OUT
L=6mH
-41VCC-46VCC-52V
V
CC
V
=0.1A;
I
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Table 9.Current sense (8 V < VCC<18V)
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
OUT
Tj= -40 °C...150 °C
(see Figure 8)
25mV
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
=0.05A;
OUT
K
K
dK
1/K1
I
0
OUT/ISENSE
I
1
OUT/ISENSE
Current sense ratio
(1)
drift
V
T
I
V
T
= 0.5 V; V
SENSE
= -40 °C...150 °C
j
=1A;
OUT
=4V; V
SENSE
= -40 °C...150 °C
j
CSD
Tj= 25 °C...150 °C
=1A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
SENSE
=0V;
CSD
=0V;
=4V;
=0V;
1050 2110 3170
1510
1890
2650
1510
1890
2270
-1313%
10/37 Doc ID 13519 Rev 6
VNQ5E050AK-EElectrical specifications
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
=2A;
OUT
K
2
I
OUT/ISENSE
V
T
=4V; V
SENSE
= -40 °C...150 °C
j
Tj= 25 °C...150 °C
CSD
=0V;
1600
1600
1800
1800
2230
2000
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
Current sense ratio
(1)
drift
I
3
OUT/ISENSE
Current sense ratio
(1)
drift
Analog sense
leakage current
Open-load on-state
current detection
threshold
=2A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
I
=4A;
OUT
V
SENSE
= -40 °C...150 °C
T
j
=0V;
=4V; V
SENSE
CSD
Tj= 25 °C...150 °C
=4A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
=0A; V
I
OUT
V
CSD
= -40 °C...150 °C
T
j
=0A; V
I
OUT
V
CSD
= -40 °C...150 °C
T
j
I
=2A; V
OUT
V
CSD
= -40 °C...150 °C
T
j
=5V; 8V<VCC<18V;
V
IN
I
SENSE
SENSE
=0V;
SENSE
=5V; VIN=0V;
SENSE
=0V; VIN=5V;
SENSE
=5V; VIN=5V;
=5µA
=4V;
=0V;
=4V;
=0V;
=0V;
=0V;
-88%
1620
1770
1990
1620
1770
1920
-66%
01
02
µA
01
420mA
V
SENSE
Max analog sense
output voltage
I
OUT
=4A; V
=0V 5V
CSD
Analog sense output
V
SENSEH
voltage in fault
condition
(2)
VCC=13V; R
=10KΩ8V
SENSE
Analog sense output
I
SENSEH
current in fault
condition
(2)
Delay response time
t
DSENSE1H
from falling edge of
CS_DIS pin
Delay response time
t
DSENSE1L
from rising edge of
CS_DIS pin
Delay response time
t
DSENSE2H
from rising edge of
INPUT pin
VCC=13V; V
V
I
<4V, 0.5A<I
SENSE
=90% of I
SENSE
(see Figure 4)
V
I
SENSE
SENSE
<4V; 0.5A<I
=10% of I
(see Figure 4)
V
I
< 4 V, 0.5 A < I
SENSE
=90% of I
SENSE
(see Figure 4)
=5V9mA
SENSE
<4A
OUT
SENSEMAX
OUT
SENSEMAX
OUT
SENSEMAX
<4A
<4A
40100µs
520µs
80250µs
Doc ID 13519 Rev 611/37
Electrical specificationsVNQ5E050AK-E
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Δ
t
DSENSE2H
t
DSENSE2L
Delay response time
between rising edge
of output current and
rising edge of current
sense
Delay response time
from falling edge of
INPUT pin
V
I
SENSE
I
OUT
I
OUTMAX
V
I
(see Figure 4)
<4V,
SENSE
=90% of I
=90% of I
< 4 V, 0.5 A < I
SENSE
=10% of I
SENSE
SENSEMAX,
OUTMAX
=2A (see Figure 7)
OUT
SENSEMAX
60µs
<4A
80250µs
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
Table 10.Open-load detection (8V<VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
OL
t
DSTKON
I
L(off2)r
I
L(off2)f
td_vol
Open-load off-state voltage
detection threshold
Output short circuit to Vcc
detection delay at turn-off
Off-state output current at
V
=4V
OUT
Off-state output current at
=2V
V
OUT
Delay response from output
rising edge to V
SENSE
rising
edge in open-load
V
=0V2
IN
See Figure 51801200µs
VIN=0V; V
V
rising from 0 V to 4 V
OUT
V
=0V;
IN
V
SENSE=VSENSEH
V
falling from VCC to 2 V
OUT
V
=4V; VIN=0V
OUT
SENSE
=90% of V
V
SENSE
=0V;
SENSEH
-1200µA
-5090µA
See
Figure 5
4V
20µs
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
12/37 Doc ID 13519 Rev 6
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
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