Quad channel high side driver with analog current sense
for automotive applications
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.) R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ Output current: 42A
■ 3.0 V CMOS compatible input
■ Current sense disable
■ Proportional load current sense
■ Undervoltage shut-down
■ Overvoltage clamp
■ Thermal shutdown
■ Current and power limitation
■ Very low standby current
■ Protection against loss of ground and loss of
V
CC
■
Very low electromagnetic susceptibility
■ Optimized electromagnetic emission
■ Reverse battery protection (see Application
CC
CC
ON
LIMH
S
schematic on page 20)
■ In compliance with the 2002/95/EC European
directive
■ Package: ECOPACK
®
Table 1.Device summary
Package
41V
4.5 to 36 V
27 mΩ
42 A
(1)
2 µA
PowerSSO-24
Applications
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VNQ5027AK-E is a monolithic device made
using STMicroelectronics VIPower technology. It
is intended for driving resistive or inductive loads
with one side connected to ground. Active V
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
compatibility table).
This device integrates an analog Current Sense
which delivers a current proportional to the load
current (according to a known ratio) when
CS_DIS is driven low or left open. When CS_DIS
is driven high, the CURRENT SENSE pin is in a
high impedance condition. Output current
limitation protects the device in overload
condition. In case of long overload duration, the
device limits the dissipated power to safe level up
to thermal shut-down intervention.
Thermal shut-down with automatic restart allows
the device to recover normal operation as soon as
fault condition disappears.
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
- I
- I
V
-V
I
OUT
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
Reverse DC output current 24A
OUT
DC Input current -1 to 10mA
I
IN
I
CSD
-I
CSENSE
V
CSENSE
E
DC Current Sense disable Input current -1 to 10mA
DC Reverse CS pin current 200mA
Current Sense maximum voltage
Maximum switching energy (single pulse)
MAX
(L=0.8 mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.))
V
-41
CC
+V
CC
140mJ
V
V
Doc ID 12730 Rev 67/31
Electrical specificationsVNQ5027AK-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(human body model: R=1.5KΩ; C=100pF)
4000
2000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature- 40 to 150°C
T
j
Storage temperature- 55 to 150 °C
stg
2.2 Thermal data
Table 5.Thermal data
SymbolParameterMax valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)1.35°C/W
Values specified in this section are for 8 V<VCC<36 V, -40 °C< Tj <150 °C, unless otherwise
stated.
Table 6.Power section
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
USDhyst
R
V
clamp
I
L(off)
1. PowerMOS leakage included.
2. For each channel.
Operating supply voltage4.51336V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shut-down
hysteresis
On-state resistance
ON
Clamp voltageIS= 20 mA414652V
I
Supply current
S
Off-state output current
Output - VCC diode
V
F
voltage
(2)
I
= 3A; Tj= 25°C
OUT
= 3A; Tj= 150°C
I
OUT
I
= 3A; VCC=5V; Tj= 25°C
OUT
Off-state; V
V
IN=VOUT=VSENSE=VCSD
On-state; V
I
OUT
VIN=V
Tj=25°C
(2)
V
IN=VOUT
CC
CC
=0A
=0V; VCC=13V;
OUT
=0V; VCC=13V;
Tj=125°C
-I
=3A; Tj=150°C0.7V
OUT
=13V; Tj=25°C;
=0V
=13V; VIN=5V;
0.5V
(1)
2
5
8
000.013
27
54
37
(1)
14
5
mΩ
mΩ
mΩ
µA
mA
µA
Table 7.Switching (VCC=13V; Tj= 25°C)
SymbolParameterTest conditionsMin.Typ.Max.Unit
t
d(on)
t
d(off)
(dV
OUT
(dV
OUT
W
ON
W
OFF
Turn-on delay time RL= 4.3Ω (see Figure 6.)40 µs
Turn-off delay time RL= 4.3Ω (see Figure 6.)40 µs
/dt)onTurn-on voltage slopeRL= 4.3Ω
/dt)
Turn-off voltage slopeRL= 4.3Ω
off
Switching energy
losses during t
won
Switching energy
losses during
t
woff
RL= 4.3Ω (see Figure 6.)0.2 mJ
RL= 4.3Ω (see Figure 6.)0.3 mJ
See
Figure 19.
See
Figure 21.
V/µs
V/µs
Doc ID 12730 Rev 69/31
Electrical specificationsVNQ5027AK-E
Table 8.Current Sense (8V<VCC<16V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
= 0.5A;
OUT
dK
dK
dK
K
0
0/K0
K
1
1/K1
K
2
2/K2
K
3
I
OUT/ISENSE
(1)
Current sense ratio drift
I
OUT/ISENSE
(1)
Current sense ratio drift
I
OUT/ISENSE
(1)
Current sense ratio drift
I
/ I
OUT
SENSE
V
= 0.5 V; V
SENSE
= -40°C...150°C
T
j
I
= 0.5A; V
OUT
= 0V;
V
CSD
= -40 °C to 150 °C
T
J
I
= 2A;
OUT
V
SENSE
= 4 V; V
SENSE
CSD
Tj= -40°C...150°C
= 25°C...150°C
T
j
I
= 2A; V
OUT
V
CSD
= -40 °C to 150 °C
T
J
I
OUT
V
SENSE
= -40°C...150°C
T
j
= 0V;
= 3A;
= 4 V; V
SENSE
CSD
Tj= 25°C...150°C
I
= 3A; V
OUT
V
CSD
= -40 °C to 150 °C
T
J
I
OUT
V
SENSE
= -40°C...150°C
T
j
= 0V;
= 10A;
= 4 V; V
SENSE
CSD
Tj= 25°C...150°C
CSD
= 0.5V;
=0 V;
= 4V;
=0 V;
= 4V;
= 0 V;
=0 V;
168029104120
-1212%
2050
2190
2700
2700
3410
3210
-1010%
2260
2350
2690
2690
3160
3030
-77%
2490
2590
2700
2700
2870
2800
I
= 10A; V
OUT
V
= 0V;
CSD
= -40 °C to 150 °C
T
J
I
= 0A; V
OUT
= 5V; VIN= 0V;
V
CSD
= -40°C...150°C
T
j
= 0V; VIN= 5V;
V
CSD
= -40°C...150°C
T
j
= 2A; V
I
OUT
= 5V; VIN= 5V;
V
CSD
dK
3/K3
I
SENSE0
(1)
Current sense ratio drift
Analog sense leakage current
Tj= -40°C...150°C
I
V
SENSE
OL
open load on-state current
detection threshold
Max analog sense
output voltage
V
I
OUT
IN
= 5V, I
= 3A; V
10/31 Doc ID 12730 Rev 6
= 4 V;
SENSE
-44%
= 0V;
SENSE
0
0
= 0V;
SENSE
0
= 5 µA530mA
SENSE
= 0V 5V
CSD
µA
1
µA
2
µA
1
VNQ5027AK-EElectrical specifications
Table 8.Current Sense (8V<VCC<16V) (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
SENSEH
I
SENSEH
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Analog sense output voltage in
over temperature condition
Analog sense output current in
over temperature condition
Delay response time from
falling edge of CS_DIS pin
Delay response time from
rising edge of CS_DIS pin
Delay response time from
rising edge of INPUT pin
Delay response time between
Δ
t
DSENSE2H
rising edge of output current
and rising edge of current
sense
t
DSENSE2L
1. Parameter guaranteed by design; it is not tested.
Delay response time from
falling edge of input pin
= 13V; R
V
CC
V
CC
V
SENSE
I
SENSE
= 13V; V
SENSE
SENSE
<4V, 0.5A<Iout<10A
= 90% of I
(see Figure 4.)
<4V, 0.5A<Iout<10A
V
SENSE
=10% of I
I
SENSE
(see Figure 4.)
<4V, 0.5A<Iout<10A
V
SENSE
=90% of I
I
SENSE
(see Figure 4.)
V
I
SENSE
I
OUT
I
OUTMAX
V
I
<4V,
SENSE
= 90% of I
= 90% of I
=2A (see Figure 5)
<4V, 0.5A<Iout<10A
SENSE
=10% of I
SENSE
(see Figure 4.)
= 3.9KΩ9V
= 5V8mA
SENSE max
SENSE max
SENSE max
SENSEMAX,
OUTMAX
SENSE max
50100µs
520µs
70300µs
200µs
100250µs
Table 9.Protection
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
I
T
T
T
HYST
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit current
limH
Short circuit current
limL
during thermal cycling
Shutdown temperature150175200°C
TSD
T
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of
RS
STATUS
Thermal hysteresis
(T
TSD-TR
)
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
VCC=13V
5V<VCC<36V
=13V; TR<Tj<T
V
CC
= 2A; VIN=0; L=6mHVCC-41 VCC-46 VCC-52V
I
OUT
=0.2A; Tj=-40°C...150°C
I
OUT
TSD
(see Figure 9.)
294259
59
A
A
16A
135°C
7°C
25mV
Doc ID 12730 Rev 611/31
Electrical specificationsVNQ5027AK-E
Table 10.Logic input
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Input low level voltage0.9V
IL
Low level input currentVIN= 0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN= 2.1V10µA
IH
Input hysteresis voltage0.25V
I
Input clamp voltage
ICL
IN
I
IN
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
CSD
CS_DIS hysteresis voltage0.25V
I
CS_DIS clamp voltage
CSD
I
CSD
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
= 1mA
= -1mA
5.5
-0.7
7V
=0.9V1µA
=2.1V10µA
= 1mA
= -1mA
5.5
-0.7
7V
V
V
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
12/31 Doc ID 12730 Rev 6
VNQ5027AK-EElectrical specifications
Figure 5.Delay response time between rising edge of output current and rising
edge of Current Sense (CS enabled)
V
IN
Δ
t
DSENSE2H
t
I
OUT
90% I
OUTMAX
I
OUTMAX
t
I
SENSE
Figure 6.Switching characteristics
V
OUT
t
Won
80%
dV
/dt
OUT
(on)
t
r
INPUT
t
d(on)
90% I
10%
I
SENSEMAX
SENSEMAX
t
d(off)
t
Woff
90%
t
f
dV
OUT
/dt
t
(off)
t
t
Doc ID 12730 Rev 613/31
Electrical specificationsVNQ5027AK-E
Figure 7.I
I
/ I
out
sense
OUT/ISENSE
vs I
OUT
4500
4000
3500
3000
2500
2000
max Tj = -40 °C to 150 °C
max Tj = 25 °C to 150 °C
min Tj = 25 °C to 150 °C
min Tj = -40 °C to 150 °C
typical value
1500
1000
246810
I
(A)
OUT
Figure 8.Maximum current sense ratio drift vs load current
dk/k(%)
15
10
5
0
-5
-10
-15
2345678910
Note:Parameter guaranteed by design; it is not tested.
I
OUT
(A)
14/31 Doc ID 12730 Rev 6
VNQ5027AK-EElectrical specifications
Table 11.Truth table
ConditionsInputOutputSense (V
Normal operation
L
H
L
H
CSD
0
Nominal
=0V)
(1)
Overtemperature
Undervoltage
Short circuit to GND
(Rsc ≤ 10 mΩ)
Short circuit to V
CC
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
Figure 14. Input high levelFigure 15. Input hysteresis voltage
Vih (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50 -250255075100 125 150 175
Tc (°C)
Doc ID 12730 Rev 617/31
Vihyst (V)
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
-50 -250255075 100 125 150 175
Tc (°C)
Electrical specificationsVNQ5027AK-E
Figure 16. On-state resistance vs T
Ron (mOhm)
100
80
60
40
20
0
-50 -250255075100 125 150 175
Iout= 3A
Vcc=13V
Tc (°C)
case
Figure 17. On-state resistance vs V
Ron (mOhm)
60
50
Tc=150°C
40
Tc=125°C
30
Tc=25°C
20
Tc=-40°C
10
0
0510152025303540
Vcc (V)
Figure 18. Undervoltage shutdownFigure 19. Turn-on voltage slope
Vusd (V)
8
7
6
5
4
3
2
1
0
-50-250255075100 125 150 175
Tc (°C)
Figure 20. I
LIMH
vs T
case
(dVout/dt )On (V/ms)
1000
900
800
700
600
500
400
300
200
100
0
-50 -250255075100 125 150 175
Vcc=13V
RI=4.3 Ohm
Tc (°C)
Figure 21. Turn-off voltage slope
CC
Ilimh (A)
60
55
Vcc=13V
50
45
40
35
30
25
20
-50-250255075100 125 150 175
Tc (°C)
18/31 Doc ID 12730 Rev 6
(dVout/dt )Off (V/ms)
600
550
500
450
400
350
300
250
200
150
100
50
0
-50 -250255075100 125 150 175
Vcc=13V
RI= 4.3 Ohm
Tc (°C)
VNQ5027AK-EElectrical specifications
Figure 22. CS_DIS high level voltageFigure 23. CS_DIS clamp voltage
Vcsdh (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50-250255075100 125 150 175
Tc (°C)
Figure 24. CS_DIS low level voltage
Vcsdl (V)
3
2,5
2
Vcsdcl(V)
10
9
8
Icsd = 1 mA
7
6
5
4
3
2
1
0
-50-250255075100 125 150 175
Tc (°C)
1,5
1
0,5
0
-50-250255075100 125 150 175
Tc (°C)
Doc ID 12730 Rev 619/31
Application informationVNQ5027AK-E
3 Application information
Figure 25. Application schematic
+5V
V
CC
R
prot
μ
C
R
prot
CS_DIS
IINPUT
OUTPUT
D
ld
R
prot
C
ext
CURRENT SENSE
R
SENSE
V
GND
GND
R
GND
D
GND
Note:Channel 2, 3, 4 have the same internal circuit as channel 1.
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
≤ 600mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
).
)
GND
only)
resistor.
GND
Power Dissipation in R
P
= (-VCC)2/R
D
GND
(when VCC<0: during reverse battery situations) is:
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
will produce a shift (I
GND
S(on)max
values. This shift will vary depending on how many devices are ON in the case of several
* R
high side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
20/31 Doc ID 12730 Rev 6
S(on)max
) in the input thresholds and the status output
GND
.
GND
becomes the sum of the
VNQ5027AK-EApplication information
3.1.2 Solution 2: a diode (D
A resistor (R
= 1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO T/R 7637/1 table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
I/Os.
if the device drives an
GND
prot
) in line to
µC and the
µC
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CCpeak
prot
= - 100V and I
≤ 180kΩ.
latchup
= 10kΩ, C
prot
≥ 20mA; V
EXT
≥ 4.5V
OHµC
= 10nF.
Doc ID 12730 Rev 621/31
Application informationVNQ5027AK-E
Figure 26. Waveforms
NORMAL OPERATION
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
V
V
CC
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
V
USD
USDhyst
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
T
j
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
T
R
T
T
TSD
RS
current
limitation
<Nominal
power
limitation
SHORT TO V
CC
<Nominal
OVERLOAD OPERATION
thermal cycling
SHORTED LOADNORMAL LOAD
I
LIMH
I
LIML
V
SENSEH
22/31 Doc ID 12730 Rev 6
VNQ5027AK-EApplication information
3.4 Maximum demagnetization energy (VCC=13.5V)
Figure 27. Maximum turn-off current versus inductance (for each channel)
100
A
10
I (A)
1
0,1110100L (mH)
B
C
A: T
B: T
C: T
VIN, I
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
L
Note:Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves A and B.
DemagnetizationDemagnetizationDemagnetization
=0Ω.
L
(at beginning of each demagnetization) of every pulse
jstart
t
Doc ID 12730 Rev 623/31
Package and PC board thermal dataVNQ5027AK-E
4 Package and PC board thermal data
4.1 PowerSSO-24™ thermal data
Figure 28. PowerSSO-24™ PC board
Note:Layout condition of R
area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70µm (front and back side),
Copper areas: from minimum pad lay-out to 8cm
Figure 29.
RTHj_amb(°C/ W)
R
thj-amb
55
50
45
40
35
30
0246810
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
vs PCB copper area in open box free air condition (one channel ON)
PCB Cu heatsink area (cm^ 2)
24/31 Doc ID 12730 Rev 6
VNQ5027AK-EPackage and PC board thermal data
Figure 30.
PowerSSO-24™ thermal impedance junction ambient single pulse (one channel
on)
ZTH (°C/W)
1000
100
10
1
0.1
0.00010.0010.010.11101001000
Time (s)
Footprint
2
2 cm
8 cm
2
Figure 31. Thermal fitting model of a double channel HSD in PowerSSO-24™
(a)
a. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 12730 Rev 625/31
Package and PC board thermal dataVNQ5027AK-E
Equation 1: pulse calculation formula
Z
where
Table 15.Thermal parameters
R1=R7=R9=R11 (°C/W)0.28
R2=R8=R10=R12 (°C/W)0.9
R3 (°C/W)6
R4 (°C/W)7.7
R5 (°C/W)998
R6 (°C/W)281710
C1=C7=C9=C11 (W.s/°C)0.001
C2=C8=C10=C12 (W.s/°C)0.003
C3 (W.s/°C)0.025
THδ
RTHδ Z
δtpT⁄=
Area/island (cm2)Footprint28
THtp
1 δ–()+⋅=
C4 (W.s/°C)0.75
C5 (W.s/°C)149
C6 (W.s/°C)2.2517
26/31 Doc ID 12730 Rev 6
VNQ5027AK-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
5.2 PowerSSO-24™ mechanical data
Figure 32. PowerSSO-24™ package dimensions
.
Doc ID 12730 Rev 627/31
Package and packing informationVNQ5027AK-E
Table 16.PowerSSO-24™ mechanical data
Millimeters
Symbol
MinTypMax
A2.45
A22.152.35
a100.1
b0.330.51
c0.230.32
D10.1010.50
E7.47.6
e0.8
e38.8
F2.3
G0.1
H10.110.5
h0.4
k0°8°
L0.550.85
O1.2
Q0.8
S2.9
T3.65
U1.0
N10°
X4.14.7
Y6.57.1
28/31 Doc ID 12730 Rev 6
VNQ5027AK-EPackage and packing information
5.3 Packing information
Figure 33. PowerSSO-24™ tube shipment (no suffix)
Base Q.ty49
Bulk Q.ty1225
C
B
A
Figure 34. PowerSSO-24™ tape and reel shipment (suffix “TR”)
Tube length (± 0.5)532
A3.5
B13.8
C (± 0.1)0.6
All dimensions are in mm.
Reel dimensions
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)100
T (max)30.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
82 to 140 mJ.
Updated Table 8: Current Sense (8V<V
CC
<16V):
– added dK0/K0 parameter
– added K
– added dK
parameter
1
parameter
1/K1
– added dK2/K2 parameter
– added dK
– added
3/K3
Δ
t
DSENSE2H
parameter
parameter
– added IOL parameter
18-Dec-20072
Added Figure 5: Delay response time between rising edge of output
current and rising edge of Current Sense (CS enabled).
Added Figure 7: I
OUT/ISENSE
vs I
OUT
Added Figure 8: Maximum current sense ratio drift vs load current.
Added Section 2.4: Electrical characteristics curves.
Added Section 3.4: Maximum demagnetization energy
(VCC = 13.5V).
Figure 31: Thermal fitting model of a double channel HSD in
Updated Table 16: PowerSSO-24™ mechanical data:
– Deleted G1 row
– Added O, Q, S, T and U rows
30/31 Doc ID 12730 Rev 6
VNQ5027AK-E
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